Patents by Inventor Jian-Wei Chen

Jian-Wei Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11121031
    Abstract: A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: September 14, 2021
    Assignee: XINTEC INC.
    Inventors: Chia-Sheng Lin, Hui-Hsien Wu, Jian-Hong Chen, Tsang-Yu Liu, Kuei-Wei Chen
  • Patent number: 11114770
    Abstract: An antenna structure suitable for 5G use includes first and second antenna units. Each second antenna unit is positioned between adjacent first antenna units. Each first antenna unit is positioned between adjacent second antenna units. Each first antenna unit and each second antenna unit are restricted to emit a radio beam in a single polarization. The first antenna unit emits radio waves in a first polarization, the second antenna unit emits waves in a second polarization. The first polarization direction and the second polarization direction are perpendicular to each other.
    Type: Grant
    Filed: November 14, 2019
    Date of Patent: September 7, 2021
    Assignee: Shenzhen Next Generation Communications Limited
    Inventors: Kuo-Cheng Chen, Jian-Wei Chang, Zheng Lin, Jia Chen, Ke-Jia Lin, Yun-Han Chen
  • Publication number: 20210273073
    Abstract: A method of forming a semiconductor device includes removing a dummy gate from over a semiconductor fin; depositing a glue layer and a fill metal over the semiconductor fin; and simultaneously etching the glue layer and the fill metal with a wet etching solution, the wet etching solution etching the glue layer at a faster rate than the fill metal and reshaping the fill metal.
    Type: Application
    Filed: February 27, 2020
    Publication date: September 2, 2021
    Inventors: Jian-Jou Lian, Chun-Neng Lin, Ming-Hsi Yeh, Chieh-Wei Chen, Tzu-Ang Chiang
  • Publication number: 20210271154
    Abstract: A camera module with heat-dissipating structure includes a substrate, a cooling plate, a chip and a lens assembly. The substrate includes an upper surface, a lower surface opposite to the upper surface, and an opening. The opening penetrates the upper surface and the lower surface. The cooling plate is disposed on the lower surface and covered the opening. A portion of the cooling plate is exposed from the opening. A surface of the cooling plate facing away from the substrate forms a plurality of protrusions. The chip is disposed on the portion of the cooling plate exposed from the upper surface. The lens assembly is disposed on the upper surface and faces the chip. An electronic device using the module is also disclosed.
    Type: Application
    Filed: September 22, 2020
    Publication date: September 2, 2021
    Inventors: SHENG-JIE DING, SHIN-WEN CHEN, JING-WEI LI, JIAN-CHAO SONG, XIAO-MEI MA
  • Patent number: 11101216
    Abstract: A method comprises forming a first conductive line and a second conductive line in a first dielectric layer over a substrate, each having a planar top surface, applying an etch-back process to the first dielectric layer until a dielectric portion between the first conductive line and the second conductive line has been removed, and the first conductive line and the second conductive line have respective cross sectional shapes including a rounded surface and two rounded corners and depositing a second dielectric layer over the substrate, while leaving a first air gap between the first conductive line and the second conductive line.
    Type: Grant
    Filed: October 2, 2019
    Date of Patent: August 24, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiang-Lun Kao, Hsiang-Wei Liu, Tai-I Yang, Jian-Hua Chen, Yu-Chieh Liao, Yung-Chih Wang, Tien-Lu Lin
  • Patent number: 10043882
    Abstract: A method of forming a semiconductor device includes the following steps. A substrate is provided, and the substrate has a first region. A barrier layer is then formed on the first region of the substrate. A first work function layer is formed on the barrier layer. An upper half portion of the first work function layer is converted into a non-volatile material layer. The non-volatile material layer is removed and a lower half portion of the first work function layer is kept.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: August 7, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Po-Wen Su, Zhen Wu, Hsiao-Pang Chou, Chiu-Hsien Yeh, Shui-Yen Lu, Jian-Wei Chen
  • Publication number: 20180151685
    Abstract: A method of forming a semiconductor device includes the following steps. A substrate is provided, and the substrate has a first region. A barrier layer is then formed on the first region of the substrate. A first work function layer is formed on the barrier layer. An upper half portion of the first work function layer is converted into a non-volatile material layer. The non-volatile material layer is removed and a lower half portion of the first work function layer is kept.
    Type: Application
    Filed: January 8, 2018
    Publication date: May 31, 2018
    Inventors: Po-Wen Su, Zhen Wu, Hsiao-Pang Chou, Chiu-Hsien Yeh, Shui-Yen Lu, Jian-Wei Chen
  • Patent number: 9899491
    Abstract: A semiconductor device and a method of forming the same, the semiconductor device include a substrate, and a first gate structure and a second gate structure disposed on the substrate. The first gate structure includes a barrier layer, a first work function layer, a second work function layer and a conductive layer stacked one over another on the substrate. The second gate structure includes the barrier layer, a portion of the first work function layer and the conductive layer stacked one over another on the substrate, wherein the portion of the first work function layer has a smaller thickness than a thickness of the first work function layer.
    Type: Grant
    Filed: June 15, 2016
    Date of Patent: February 20, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Po-Wen Su, Zhen Wu, Hsiao-Pang Chou, Chiu-Hsien Yeh, Shui-Yen Lu, Jian-Wei Chen
  • Publication number: 20170330952
    Abstract: A semiconductor device and a method of forming the same, the semiconductor device include a substrate, and a first gate structure and a second gate structure disposed on the substrate. The first gate structure includes a barrier layer, a first work function layer, a second work function layer and a conductive layer stacked one over another on the substrate. The second gate structure includes the barrier layer, a portion of the first work function layer and the conductive layer stacked one over another on the substrate, wherein the portion of the first work function layer has a smaller thickness than a thickness of the first work function layer.
    Type: Application
    Filed: June 15, 2016
    Publication date: November 16, 2017
    Inventors: Po-Wen Su, Zhen Wu, Hsiao-Pang Chou, Chiu-Hsien Yeh, Shui-Yen Lu, Jian-Wei Chen
  • Patent number: 9443952
    Abstract: A method of forming a semiconductor device is disclosed. A substrate having multiple fins is provided. An insulating layer fills a lower portion of a gap between two adjacent fins. At least one first stacked structure is formed on one fin and at least one second stacked structure is formed on one insulation layer. A first dielectric layer is formed to cover the first and second stacked structures. A portion of the first dielectric layer and portions of the first and second stacked structures are removed. Another portion of the first dielectric layer is removed until a top of the remaining first dielectric layer is lower than tops of the first and second stacked structures. A second dielectric layer is formed to cover the first and second stacked structures. A portion of the second dielectric layer is removed until the tops of the first and second stacked structures are exposed.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: September 13, 2016
    Assignee: United Microelectronics Corp.
    Inventors: Chun-Tsen Lu, Chih-Jung Su, Jian-Wei Chen, Shui-Yen Lu, Yi-Wen Chen, Po-Cheng Huang, Chen-Ming Huang, Shih-Fang Tzou
  • Publication number: 20160170552
    Abstract: A processing method for touch signals includes receiving at least one touch signal packet, wherein the at least one touch signal packet is generated in response to operations of at least one object on a touch device, performing a determination process according to at least one of the at least one touch signal packet and an application program being executed in a computer system, and providing at least one first packet to a first driver or providing at least one second packet to a second driver according to a determination result of the determination process, wherein when receiving the at least one first packet, the first driver generates a first command according to the at least one first packet, and when receiving the at least one second packet, the second driver generates a second command according to the at least one second packet.
    Type: Application
    Filed: September 16, 2015
    Publication date: June 16, 2016
    Inventors: Jian-Wei Chen, Ying-Chieh Chuang, Jiun-Hua Chiu
  • Publication number: 20160099179
    Abstract: A method of forming a semiconductor device is disclosed. A substrate having multiple fins is provided. An insulating layer fills a lower portion of a gap between two adjacent fins. At least one first stacked structure is formed on one fin and at least one second stacked structure is formed on one insulation layer. A first dielectric layer is formed to cover the first and second stacked structures. A portion of the first dielectric layer and portions of the first and second stacked structures are removed. Another portion of the first dielectric layer is removed until a top of the remaining first dielectric layer is lower than tops of the first and second stacked structures. A second dielectric layer is formed to cover the first and second stacked structures. A portion of the second dielectric layer is removed until the tops of the first and second stacked structures are exposed.
    Type: Application
    Filed: October 3, 2014
    Publication date: April 7, 2016
    Inventors: Chun-Tsen Lu, Chih-Jung Su, Jian-Wei Chen, Shui-Yen Lu, Yi-Wen Chen, Po-Cheng Huang, Chen-Ming Huang, Shih-Fang Tzou
  • Patent number: 9024895
    Abstract: The present invention provides a touch pad operable with multi-objects and a method of operating such a touch pad. The touch pad includes a touch structure for sensing touch points of a first and a second object and a controller for generating corresponding touching signals and related position coordinates. Moreover, the controller calculates at least two movement amount indexes according to coordinate differences between these position coordinates, thereby generating a movement amount control signal to control behaviors of a software object.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: May 5, 2015
    Assignee: Elan Microelectronics Corporation
    Inventors: Wei-Wen Yang, Chuh-Min Liu, Jian-Wei Chen
  • Patent number: 8828843
    Abstract: A method of manufacturing an isolation structure includes forming a laminate structure on a substrate. A plurality trenches is formed in the laminate structure. Subsequently a pre-processing is effected to form a hydrophilic thin film having oxygen ions on the inner wall of the trenches. Spin-on-dielectric (SOD) materials are filled into the trenches. The hydrophilic think film having oxygen ions changes the surface tension of the inner wall of the trenches and increases SOD material fluidity.
    Type: Grant
    Filed: May 2, 2013
    Date of Patent: September 9, 2014
    Assignee: Inotera Memories, Inc.
    Inventors: Yaw-Wen Hu, Jung-Chang Hsieh, Kuen-Shin Huang, Jian-Wei Chen, Ming-Tai Chien
  • Publication number: 20140220762
    Abstract: A method of manufacturing an isolation structure includes forming a laminate structure on a substrate. A plurality trenches is formed in the laminate structure. Subsequently a pre-processing is effected to form a hydrophilic thin film having oxygen ions on the inner wall of the trenches. Spin-on-dielectric (SOD) materials are filled into the trenches. The hydrophilic think film having oxygen ions changes the surface tension of the inner wall of the trenches and increases SOD material fluidity.
    Type: Application
    Filed: May 2, 2013
    Publication date: August 7, 2014
    Applicant: INOTERA MEMORIES, INC.
    Inventors: YAW-WEN HU, JUNG-CHANG HSIEH, KUEN-SHIN HUANG, JIAN-WEI CHEN, MING-TAI CHIEN
  • Publication number: 20140184528
    Abstract: The method for identifying a gesture on a touch panel has steps of receiving position information of at least three touch objects; determining whether the position information of any one of the at least three touch objects has been changed; if the position information of any one of the at least three touch objects has been changed, calculating a first sum of distances between the at least three touch objects before moving, then calculating a second sum of distances between the at least three touch objects after moving, and calculating a variation between the first sum and the second sum; and determining whether the variation exceeds a default value, and if the variation exceeds a default value, a first gesture is identified. The first gesture is identified as a grab gesture or a spread gesture based on whether the variation is positive or negative.
    Type: Application
    Filed: April 3, 2013
    Publication date: July 3, 2014
    Applicant: ELAN MICROELECTRONICS CORPORATION
    Inventors: Jian-Wei CHEN, Chien-Chou CHEN, Ying-Chieh CHUANG
  • Publication number: 20130106745
    Abstract: The present invention provides a touch pad operable with multi-objects and a method of operating such a touch pad. The touch pad includes a touch structure for sensing touch points of a first and a second object and a controller for generating corresponding touching signals and related position coordinates. Moreover, the controller calculates at least two movement amount indexes according to coordinate differences between these position coordinates, thereby generating a movement amount control signal to control behaviors of a software object.
    Type: Application
    Filed: September 13, 2012
    Publication date: May 2, 2013
    Applicant: ELAN MICROELECTRONICS CORPORATION
    Inventors: Wei-Wen YANG, Chuh-Min LIU, Jian-Wei Chen
  • Patent number: 8350822
    Abstract: The present invention provides a touch pad operable with multi-objects and a method of operating such a touch pad. The touch pad includes a touch structure for sensing touch points of a first and a second object and a controller for generating corresponding touching signals and related position coordinates. Moreover, the controller calculates at least two movement amount indexes according to coordinate differences between these position coordinates, thereby generating a movement amount control signal to control behaviors of a software object.
    Type: Grant
    Filed: January 8, 2012
    Date of Patent: January 8, 2013
    Assignee: Elan Microelectronics Corp.
    Inventors: Wei-Wen Yang, Chih-Min Liu, Jian-Wei Chen
  • Publication number: 20110224205
    Abstract: Provided is combined use of an epidermal growth factor receptor tyrosine kinase inhibitor (EGFR-TKI) and curcumin or its analogue in cancer therapy, which reduces side effects resulting from the EGFR-TKI and reduces doses of the EGFR-TKI needed for the therapy, particular in a patient resistant to the treatment with the EGFR-TKI alone.
    Type: Application
    Filed: February 11, 2011
    Publication date: September 15, 2011
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: Huei-Wen Chen, Jen-Yi Lee, Pan-Chyr Yang, Sung-Liang Yu, Jian-Wei Chen, Chih-Hsin Yang, Chao-Chi Ho, Kuo-Hsiung Lee, Yufeng Jane Tseng, Gee-Chen Chang
  • Patent number: 7745134
    Abstract: This invention provides a method for predicting the post-treatment survival prospect of a cancer patient based on the expression level(s) of microRNAs hsa-miR137, hsa-miR372, hsa-miR182*, hsa-miR221, and hsa-let-7a in that cancer patient.
    Type: Grant
    Filed: April 9, 2008
    Date of Patent: June 29, 2010
    Assignees: National Taiwan University, Taichung Veterans General Hospital, National Chung Hsing University
    Inventors: Jian-Wei Chen, Sung-Liang Yu, Hsuan-Yu Chen, Gee-Chen Chang, Chih-Yi Chen, Pan-Chyr Yang