Abstract: An embodiment of the disclosed technology provides a thin film transistor device comprising a source electrode, a drain electrode, a gate electrode, an active layer corresponding to the gate electrode, and a gate insulation layer formed between the gate electrode and the active layer; a concave region corresponding to the gate electrode is provided in the gate insulation layer.

Abstract: According to one aspect of the present invention, the provided is an array substrate. Specifically, the first conductive strip that is coupled to the first data shorting bar and the second conductive strip that is coupled to the second data shorting bar are formed on the array substrate. The width of the first conductive strip is greater than the width of the first data shorting bar. The width of the second conductive strip is greater than the width of the second data shorting bar. The first conductive strip is overlapped with the second conductive strip. Such a structure of the array substrate effectively increases the overlapped capacitance between the data metal layer and the gate metal layer.

Abstract: An array substrate, a method for fabricating the same and a display device are disclosed. The array substrate comprises a display region, at least two common electrode blocks are disposed at a periphery of the display region and conducted via a pixel electrode bridge line pattern.

Abstract: The present invention relates to an array substrate for an LCD display and manufacturing method. The array substrate comprise a transparent substrate, gate lines and data lines disposed on the transparent substrate, a transparent conducting bar and a gate short-circuit bar. The transparent conducting bar is disposed below the gate short-circuit bar with the gate short-circuit bar and data lines arranged in the same layer. The present invention avoids the problem of burning the gate short-circuit bar due to the occurrence of static discharge and electrical defects in the array substrate are detectable and repairable in the array test process, improving the product rate of the LCD array substrate.

Abstract: An embodiment of the present invention provides a display system, and the display system comprises a light beam emitting device, emitting a first light beam for marking an input position and a second light beam for confirming the input position, the first light beam being visible light, and the second light beam differing from the first light beam; and a display device, comprising a displaying area, photo-sensitive devices distributed within the displaying area, processing devices coupled with the photo-sensitive devices. The photo-sensitive devices are used for sensing the second light beam projected upon the displaying area and achieving a sensing result; the processing devices are used for determining the projecting position of the second light beam upon the displaying area according to the sensing result, and performing a corresponding operation based on the sensing result. The present invention is capable of performing remote touch operation on the display device.

Abstract: An embodiment of the disclosed technology provides a thin film transistor device comprising a source electrode, a drain electrode, a gate electrode, an active layer corresponding to the gate electrode, and a gate insulation layer formed between the gate electrode and the active layer; a concave region corresponding to the gate electrode is provided in the gate insulation layer.

Abstract: The present invention relates to an organic thin film transistor (OTFT) comprising: a substrate (1), a gate electrode (2) formed on the substrate (1), a gate insulation layer formed on the gate electrode, a source electrode (5) and a drain electrode (6) formed on the gate insulation layer including a first insulation layer (3) and a second insulation layer (4) with different dielectric constants, and an active layer (7) which overlays the source electrode (5) and the drain electrode (6). Without adding the conventional complicated processes like photolithography but adding two simple processes of spin coating or vaporously coating the second insulation film and self-aligned dry RIE, the present invention not only can improve the carrier's injection property so as to improve the OTFT device's properties, but also can block the leakage current of the gate insulation layer and reduce the device's parasitic capacitance.

Abstract: The present invention relates to an organic thin film transistor (OTFT) comprising: a substrate (1), a gate electrode (2) formed on the substrate (1), a gate insulation layer formed on the gate electrode, a source electrode (5) and a drain electrode (6) formed on the gate insulation layer including a first insulation layer (3) and a second insulation layer (4) with different dielectric constants, and an active layer (7) which overlays the source electrode (5) and the drain electrode (6). Without adding the conventional complicated processes like photolithography but adding two simple processes of spin coating or vaporously coating the second insulation film and self-aligned dry RIE, the present invention not only can improve the carrier's injection property so as to improve the OTFT device's properties, but also can block the leakage current of the gate insulation layer and reduce the device's parasitic capacitance.