Abstract: Provided are a laser cutting device and a laser cutting method. The laser cutting device comprises a beam expanding element provided with a plurality of lens sets, wherein optical axes of the plurality of lens sets are located in the same line and each lens set comprises at least one lens; the beam expanding element is configured to convert an incident beam into a first beam; and a spectroscopic element arranged on a light path of an emitted light of the beam expanding element, and wherein the spectroscopic element is configured to convert the first beam into multiple second beams that are annular and spaced apart from each other.

Abstract: Provided are a laser cutting device and a laser cutting method. The laser cutting device comprises a beam expanding element provided with a plurality of lens wherein optical axes of the plurality of lens sets are located in the same line and each lens set comprises at least one lens; the beam expanding element converts an incident beam into a first beam; and a laser splitting element and the first beam are arranged in an emitting optical path of the beam expanding element, and the laser splitting element converts the first beam into a plurality of second beams spaced from one another. In the laser cutting device, by means of providing the laser splitting element, the first beam is converted into the plurality of second beams, so as to obtain the effect of beam adjustment.

Abstract: A method for cutting sapphire comprising a sapphire body and a coating formed on the sapphire body, the method comprising: focusing a first CO2 laser beam the coating via a CO2 focusing assembly to remove the coating with a predetermined thickness extending along a first path; wherein dust and debris generated during removal of the coating are removed while the coating is removed; focusing an ultrafast laser beam on the sapphire body via an optical path shaping assembly to form a plurality of restructuring channels distributed along a second path and penetrating through the sapphire; wherein the second path coincides with the first path; scanning, by the second CO2 laser beam, the sapphire body via a galvanometer focusing assembly, wherein a path of the second CO2 laser beam scanning the sapphire body via a galvanometer focusing assembly coincides with or deviates from the second path, so that the sapphire cracks along the restructuring channels.

Abstract: The present disclosure relates to a laser cutting field, and in particular to a laser cutting head for cutting hard, brittle products and a laser cutting device for cutting hard, brittle products. The laser cutting head includes a polarizing element, a binary phase element and a focusing element. The polarizing element, the binary phase element and the focusing element are disposed in sequence. The polarizing element, the binary phase element, and the focusing element are structured and configured together such that a laser light is configured to pass through the polarizing element to form a polarizing laser light that is emitted to the binary phase element, the binary phase element modulating phase of the polarizing laser light. A diffractive laser light is formed in a location of the binary phase element, which is emitted to the focusing element.

Abstract: A laser processing method for a sapphire includes: acquiring an image of the sapphire during processing; performing an edge detection to the image to acquire a coordinate of a crack; determining an offset parameter according to the coordinate of the crack; adjusting a laser processing position according to the offset parameter; and further processing the sapphire in accordance with the adjusted laser processing position.

Abstract: The present invention relates to a laser lift-off method of wafer. The method includes the steps as follows: focusing laser in an inside for a wafer (10) to form a plurality of cracking points (19), the plurality of cracking points (19) are located on a separating surface (20); and exerting, under a temperature of ?400K to 0K, forces with opposite directions to opposite sides of the wafer (10), thereby dividing the wafer (10) into two pieces along the separating surface (20).

Abstract: A method for cutting sapphire comprising a sapphire body and a coating formed on the sapphire body, the method comprising: focusing a first CO2 laser beam the coating via a CO2 focusing assembly to remove the coating with a predetermined thickness extending along a first path; wherein dust and debris generated during removal of the coating are removed while the coating is removed; focusing an ultrafast laser beam on the sapphire body via an optical path shaping assembly to form a plurality of restructuring channels distributed along a second path and penetrating through the sapphire; wherein the second path coincides with the first path; scanning, by the second CO2 laser beam, the sapphire body via a galvanometer focusing assembly, wherein a path of the second CO2 laser beam scanning the sapphire body via a galvanometer focusing assembly coincides with or deviates from the second path, so that the sapphire cracks along the restructuring channels.

Abstract: The present invention relates to a laser lift-off method of wafer. The method includes the steps as follows: focusing laser in an inside for a wafer (10) to form a plurality of cracking points (19), the plurality of cracking points (19) are located on a separating surface (20); and exerting, under a temperature of ?400K to 0K, forces with opposite directions to opposite sides of the wafer (10), thereby dividing the wafer (10) into two pieces along the separating surface (20).

Abstract: A laser processing method for a sapphire includes: acquiring an image of the sapphire during processing; performing an edge detection to the image to acquire a coordinate of a crack; determining an offset parameter according to the coordinate of the crack; adjusting a laser processing position according to the offset parameter; and further processing the sapphire in accordance with the adjusted laser processing position.