Abstract: A projection display device and a projection display equipment are provided. The projection display device includes a display screen body, a photosensitive device, and a control module. The control module is electrically connected to the display screen body, the photosensitive device outputs a photosensitive signal when sensing a projection light beam, and the control module is electrically connected to the photosensitive device to receive the photosensitive signal and to control a section on the display screen body corresponding to a projection position of the projection light beam to be converted from a transparent state to an opaque state according to the photosensitive signal.

Abstract: A photosensitive device and a display panel are provided. The photosensitive device includes a substrate and a photosensitive functional layer. The photosensitive functional layer includes a thin film transistor layer and a quantum dot layer. The quantum dot layer is configured to emit an excitation light under an excitation of an external light. A photo-generated current efficiency of the photosensitive device can be improved, and stability and versatility of the photosensitive device can also be improved.

Abstract: The present application provides a display panel and a display device. The display panel includes a plurality of light-sensing circuits and a position detection circuit. The plurality of light-sensing circuits are disposed in the display panel and are arranged in an array. Each of the plurality of light-sensing circuits includes a light-sensing transistor. The present application disposes a quantum dot layer, which can absorb interactive light and convert its light intensity signal into an electrical signal, and determines an irradiation position of the interactive light through the position detection circuit, so that an interaction with light with a longer wavelength can be realized.

Abstract: The present application provides a control component, a display screen, and a control device. The control component is integrated in a display screen and includes a substrate and a light control structure and a touch control structure arranged side by side on the substrate; the light control structure includes a signal input line, a signal output line, and a photosensitive circuit electrically connected between the signal input line and the signal output line; the touch control structure includes a plurality of receiving electrodes and a plurality of transmitting electrodes; and the receiving electrodes are multiplexed as the signal output line.

Abstract: A display device and a manufacturing method thereof are provided. The display device includes a first substrate, a first array structure layer disposed on the first substrate, and a second substrate disposed on the first array structure layer. The first array structure layer includes a photosensitive sensor, a touch sensor, and a spacer layer. The touch sensor includes a receiving electrode. The spacer layer is disposed between the photosensitive sensor and the receiving electrode. The receiving electrode is disposed on a side of the spacer layer away from the photosensitive sensor.

Abstract: The present invention discloses a micro light emitting diode display substrate and a manufacturing method thereof. The substrate includes an underlay substrate, a thin film transistor and a micro light emitting diode disposed on a top surface of the underlay substrate and connected to each other, a first metal film layer disposed on a bottom surface of the underlay substrate and at least formed with fanout circuit pattern and a side printed bonding pad. The fanout circuit pattern is connected to the side printed bonding pad, the side printed bonding pad is connected to the thin film transistor through a side wire such that after the display substrate is assembled with a bezel, a top surface display pixel region can maximally approach the bezel, to achieve bezel-less effect.

Abstract: A sensor module and a display device are provided. The sensor module includes a substrate and a touch sensor positioned on the substrate. The touch sensor includes a transmitter electrode and a receiver electrode, positioned at one side of the transmitter electrode, which is back on to the substrate. An optical sensor includes a thin film transistor. A gate of the thin film transistor and the transmitter electrode are positioned in a same layer, and a source/drain of the thin film transistor and the receiver electrode are positioned in a same layer.

Abstract: The present invention discloses a liquid crystal display panel and a liquid crystal display device. The liquid crystal display panel comprises a first substrate and a second substrate. A first underlay substrate of the first substrate is disposed with an optical sensor. Sensing transistors of the optical sensor includes a first semiconductor. A color filter layer is disposed between the first semiconductor and the first underlay substrate. The color filter layer includes color resist blocks and a light shielding portion. an orthographic projection of the light shielding portion on the first underlay substrate covers an orthographic projection of the first semiconductor on the first underlay substrate.

Abstract: The present invention discloses a liquid crystal display panel and a liquid crystal display device. The liquid crystal display panel comprises a first substrate and a second substrate. A first underlay substrate of the first substrate is disposed with an optical sensor. Sensing transistors of the optical sensor includes a first semiconductor. A color filter layer is disposed between the first semiconductor and the first underlay substrate. The color filter layer includes color resist blocks and a light shielding portion. an orthographic projection of the light shielding portion on the first underlay substrate covers an orthographic projection of the first semiconductor on the first underlay substrate.

Abstract: A photoelectric conversion device, a manufacturing method thereof, and a display device are provided. The photoelectric conversion device includes a substrate and a thin film transistor unit layer arranged on the substrate. The photoelectric conversion device includes a photosensitive surface. The thin film transistor unit layer includes an active layer, a source-drain metal layer positioned at both ends of the active layer and electrically connected to the active layer, and a photonic crystal functional layer disposed on a side of the active layer away from the photosensitive surface.

Abstract: A manufacturing method of a TFT array substrate is provided, comprising: depositing and forming a gate and a gate scanning line; depositing sequentially a gate insulating layer, an active layer and a second metal layer; depositing and forming a first photoresist layer and a second photoresist layer on the second metal layer; first photoresist layer comprising a first-stage photoresist layer, second-stage photoresist layer and third-stage photoresist layer with increasing thickness, the first-stage photoresist layer being in the middle of the first photoresist layer and a channel being formed; ashing to remove first-stage photoresist layer, forming a source and a drain by etching; and ashing to remove the second-stage photoresist layer, and then depositing a passivation layer as a whole; stripping third-stage photoresist layer and second photoresist layer, depositing and forming a pixel electrode and a common electrode.

Abstract: A manufacturing method of a TFT array substrate is provided, comprising: depositing and forming a gate and a gate scanning line; depositing sequentially a gate insulating layer, an active layer and a second metal layer; depositing and forming a first photoresist layer and a second photoresist layer on the second metal layer; first photoresist layer comprising a first-stage photoresist layer, second-stage photoresist layer and third-stage photoresist layer with increasing thickness, the first-stage photoresist layer being in the middle of the first photoresist layer and a channel being formed; ashing to remove first-stage photoresist layer, forming a source and a drain by etching; and ashing to remove the second-stage photoresist layer, and then depositing a passivation layer as a whole; stripping third-stage photoresist layer and second photoresist layer, depositing and forming a pixel electrode and a common electrode.

Abstract: The present invention provides an apparatus and a method for transferring micro light-emitting diodes. Said apparatus for transferring the micro light-emitting diodes comprises a main body, and a spraying module, a cooling module and a heating module disposed on said main body. The spraying module sprays metallic adhesive liquid onto the micro light-emitting diodes that wait to transfer, the cooling module cools the metallic adhesive liquid on the wait-to-transfer micro light-emitting diodes, thereby curing the metallic adhesive liquid to adhesively bond the main body with the wait-to-transfer micro light-emitting diodes together implementing the transfer of the micro light-emitting diodes, After transferred to reach the position, the cured metallic adhesive liquid is heated by the heating module, thereby melting the metallic adhesive liquid to separate the main body from the wait-to-transfer micro light-emitting diodes.

Abstract: The present invention provides an apparatus and a method for transferring micro light-emitting diodes. Said apparatus for transferring the micro light-emitting diodes comprises a main body, and a spraying module, a cooling module and a heating module disposed on said main body. The spraying module sprays metallic adhesive liquid onto the micro light-emitting diodes that wait to transfer, the cooling module cools the metallic adhesive liquid on the wait-to-transfer micro light-emitting diodes, thereby curing the metallic adhesive liquid to adhesively bond the main body with the wait-to-transfer micro light-emitting diodes together implementing the transfer of the micro light-emitting diodes, After transferred to reach the position, the cured metallic adhesive liquid is heated by the heating module, thereby melting the metallic adhesive liquid to separate the main body from the wait-to-transfer micro light-emitting diodes.

Abstract: Provided are a thin film transistor array substrate and a manufacture method thereof, comprising: providing a substrate, and the substrate comprises a first surface and a second surface, which are oppositely located; forming a gate on the first surface; forming a first insulative layer, which covers on the gate; forming a metal oxide semiconductor layer on the first insulative layer; implementing ion implantation to two end regions of the metal oxide semiconductor layer, and the two end regions after the ion implantation respectively are a source and a drain, and a region without the ion implantation is an active layer; forming a second insulative layer, which covers the source, the drain and the active layer; opening a via exposing the source or the drain in the second insulative layer; forming a pixel electrode on the second insulative layer, and connected with the source or the drain through the via.

Abstract: A method for manufacturing a flexible organic light emitting display is disclosed. The method is: sequentially forming a first buffer layer, a switch array layer, a display unit layer, and a thin film package layer on a flexible underlay substrate. When the flexible organic light emitting display bends along the flexible underlay substrate, a first bending deformation force is generated. The first buffer layer is used to absorb the first bending deformation force, and the material of the first buffer layer is an organic insulating material.

Abstract: The present invention provides a TFT (Thin Film Transistor) substrate manufacture method, which includes forming a TFT gate electrode on a substrate, sequentially forming a first insulation layer, an active layer, a source electrode, and a drain electrode, and then forming a second insulation layer and coating a photoresist thereon, defining a pixel electrode pattern, forming a drain VIA hole on the second insulation layer, depositing a pixel electrode layer after preparing suede on the photoresist, and permeating the suede with a stripping liquid to remove the photoresist and the pixel electrode layer on the photoresist so as to form a pixel electrode connecting to the drain electrode via the drain VIA hole.

Abstract: A thin-film transistor substrate manufacturing method includes sequentially forming, on a backing, a gate electrode, a gate insulation layer, a source electrode and an active layer, a passivation layer, a drain electrode, and a pixel electrode. Orthogonal projections of the gate electrode, the gate insulation layer, the source electrode and the active layer, the passivation layer, the drain electrode, and the pixel electrode on the backing that are concentric centro-symmetric patterns. Also provided re a thin-film transistor substrate and a liquid crystal panel including the thin-film transistor substrate. The thin-film transistor substrate manufacturing method, the thin-film transistor substrate and the liquid crystal panel including the thin-film transistor substrate allow electrical property of a thin-film transistor consistent in all bending directions and make the thin-film transistor not easily subjected to stress damage during bending so as to improve the reliability of the thin-film transistor.

Abstract: The present invention provides a TFT (Thin Film Transistor) substrate manufacture method, which includes forming a TFT gate electrode on a substrate, sequentially forming a first insulation layer, an active layer, a source electrode, and a drain electrode, and then forming a second insulation layer and coating a photoresist thereon, defining a pixel electrode pattern, forming a drain VIA hole on the second insulation layer, depositing a pixel electrode layer after preparing suede on the photoresist, and permeating the suede with a stripping liquid to remove the photoresist and the pixel electrode layer on the photoresist so as to form a pixel electrode connecting to the drain electrode via the drain VIA hole.

Abstract: An organic light emitting device includes: one thin film transistor (TFT) and a first auxiliary electrode on the first substrate; a second auxiliary electrode being overlapped and being electrically connected with the first auxiliary electrode; a light emitting unit above and being electrically connected with the TFT, the light emitting unit comprising a first and a second pixel electrode, an organic light-emitting layer between the first and the second pixel electrode; wherein the second pixel electrode comprising a first area and a second area connecting with the first area, the first area being above and electrically connecting with the second auxiliary electrode, wherein the organic light-emitting layer being spaced apart from the second auxiliary electrode by a portion between the organic light-emitting layer and the second auxiliary electrode; and wherein tops of the first and the second area of the second pixel electrode are on the same plane.