Abstract: A processing apparatus for processing a workpiece is presented. The processing apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. One or more radiative heat sources configured to heat the workpiece disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. The processing apparatus includes a rotation system configured to rotate the workpiece, the rotation system comprising a magnetic actuator.

Abstract: A method includes determining a first memory access count threshold for a first word line of a block of memory cells and determining a second memory access count threshold for a second word line of the block of memory cells. The second memory access count threshold can be greater than the first memory access count threshold. The method can further include incrementing a memory block access count corresponding to the block of memory cells that includes the first word line and the second word line in response to receiving a memory access command and refreshing the first word line when the memory block access count corresponding to the block of memory cells is equal to the first memory access count threshold.

Abstract: An example apparatus includes a media management superblock component configured to determine that a quantity of blocks of a superblock of a non-volatile memory array are bad blocks; compare the quantity of bad blocks to a bad block criteria; and write host data to the superblock with the quantity of bad blocks in response to the quantity of bad blocks meeting the bad block criteria. The use of the superblock with a particular quantity of bad block minimizes yield loss for non-use of partial superblocks.

Abstract: Methods, systems, and apparatuses related to source address memory management are described. For example, a controller can be coupled to a memory device to select a source block, a destination block, and a metadata block. The controller can store metadata indicative of an address of the source block in the metadata block. The controller can perform a memory management operation to transfer data from the source block to the destination block.

Abstract: A system can include a memory device with multiple management units, each management unit made up of multiple blocks, and a processing device, operatively coupled with the memory device, to perform various operations including identifying, among the management units, some complete management units and some incomplete management units, as well as performing one type of operation using one or more complete management units. The operations can also include performing another type of operation using one or more incomplete management units where this other type of operation include writing, to one or more incomplete management units, metadata associated with the data stored in complete management units.

Abstract: A variety of applications can include apparatus and/or methods to preemptively detect defect prone memory blocks in a memory device and handle these memory blocks before they fail and trigger a data loss event. Metrics based on memory operations can be used to facilitate the examination of the memory blocks. One or more metrics associated with a memory operation on a block of memory can be tracked and a Z-score for each metric can be generated. In response to a comparison of a Z-score for a metric to a Z-score threshold for the metric, operations can be performed to control possible retirement of the memory block beginning with the comparison. Additional apparatus, systems, and methods are disclosed.

Abstract: A parity generation operation based on a set of multiple planes of host data is executed to generate a set of multi-page parity data. The set of multi-page parity data is stored in a cache memory of a memory device. A data recovery operation is performed based on the set of multi-page parity data.

Abstract: A method includes receiving a command to write data to a memory device and writing the data to a first memory tier of the memory device. The first memory tier of the memory device is a dynamic memory tier that utilizes single level cells (SLCs), multi-level cells (MLCs), and triple level cells (TLCs). The method further includes migrating the data from the first memory tier of the memory device to a second memory tier of the memory device. The second memory tier of the memory device is a static memory tier that utilizes quad level cells (QLCs).

Abstract: A system can include a memory device, and a processing device, operatively coupled with the memory device, to perform operations of writing a first portion of data to one or more complete translation units of the memory device using a first number of logical levels per memory cell and writing a second portion of the data to one or more incomplete translation units of the memory device using the first number of logical levels per memory cell. The operations can also include writing a third portion of the data to one or more complete translation units of the memory device using a second number of logical levels per memory cell that exceeds the first number of logical levels per memory cell.

Abstract: Disclosed in some examples are systems, methods, NAND memory devices, and machine readable mediums for intelligent SLC cache migration processes that move data written to SLC cache to MLC storage based upon a set of rules that are evaluated using the state of the NAND device. In some examples, the SLC cache migration process may utilize a number of NAND operational parameters to determine when to move the data written to SLC cache to MLC, how much data to move from SLC to MLC, and the parameters for moving the data.

Abstract: Disclosed in some examples are methods, systems, devices, and machine-readable mediums that provide for techniques for scrambling and/or updating meta-data that enable an efficient internal copyback operation. In some examples, improved data distribution techniques decouple the scrambling key from a physical address to allow for copyback operations while maintaining data distribution requirements across a memory device. The controller may generate a seed value that is used by a scrambling algorithm to scramble the host-data and meta-data prior to the data being written. The seed value is then encoded and written to the page with encoded versions of the scrambled user data and meta-data—the random seed is written without scrambling the random seed.

Abstract: Systems and methods for read operations and management are disclosed. More specifically, this disclosure is directed to receiving a first read command directed to a first logical address and receiving, after the first read command, a second read command directed to a second logic address. The method also includes receiving, after the second read command, a third read command directed to a third logical address and determining that the first logical address and the third logical address correspond to a first physical address and a third physical address, respectively. The first physical address and the third physical address can be associated with a first word line of a memory component while the second logical address corresponds to a second physical address associated with a second word line of the memory component. The method includes executing the first read command and the third read command sequentially.

Abstract: Disclosed in some examples are methods, systems, devices, memory devices, and machine-readable mediums for using a non-defective portion of a block of memory on which there is a defect on a different portion. Rather than disable the entire block, the system may disable only a portion of the block (e.g., a first deck of the block) and salvage a different portion of the block (e.g., a second deck of the block).

Abstract: Disclosed in some examples are methods, systems, devices, and machine-readable mediums that provide for techniques for scrambling and/or updating meta-data that enable an efficient internal copyback operation. In some examples, in order to update the meta-data, the meta-data and host-data are separated and the only the meta-data is sent to the controller to be updated during a modified internal copyback operation. The host-data is not transmitted to the controller. While sending the meta-data utilizes resources of the communication link between the memory dies and the controller, it uses much fewer resources than if the host-data were also transmitted.

Abstract: The present invention relates to methods for identifying and/or quantifying low abundance, nucleotide base mutations, insertions, deletions, translocations, splice variants, miRNA variants, alternative transcripts, alternative start sites, alternative coding sequences, alternative non-coding sequences, alternative splicings, exon insertions, exon deletions, intron insertions, or other rearrangement at the genome level and/or methylated or hydroxymethylated nucleotide bases, as well as markers to identify early cancer, monitor cancer treatment, and identify early cancer recurrence.

Abstract: Described are systems and methods for performing memory programming operations in the overwrite mode. An example memory device includes: a memory array comprising a plurality of memory cells electrically coupled to a plurality of wordlines and a plurality of bitlines; and a controller coupled to the memory array, the controller to perform operations comprising: responsive to identifying a first data item to be stored by a portion of the memory array, causing a first memory programming operation to be performed to program, to a first target threshold voltage, a set of memory cells included by the portion of the memory array; and responsive to identifying a second data item to be stored by the portion of the memory array, causing a second memory programming operation to be performed to program the set of memory cells to a second target threshold voltage exceeding the first target threshold voltage.

Abstract: An apparatus can include a partial superblock memory management component. The partial superblock memory management component can identify bad blocks in respective planes of a block of non-volatile memory cells. The partial superblock memory management component can determine that a plane of the respective planes includes at least good block in at least one different block of non-volatile memory cells. The partial superblock memory management component can perform an operation to reallocate the at least one good block in the plane to the at least one bad block in the plane to form blocks of non-volatile memory cells having a quantity of bad blocks that satisfies a bad block threshold.

Abstract: Disclosed in some examples are systems, methods, memory devices, and machine readable mediums for a fast secure data destruction for NAND memory devices that renders data in a memory cell unreadable. Instead of going through all the erase phases, the memory device may remove sensitive data by performing only the pre-programming phase of the erase process. Thus, the NAND doesn't perform the second and third phases of the erase process. This is much faster and results in data that cannot be reconstructed. In some examples, because the erase pulse is not actually applied and because this is simply a programming operation, data may be rendered unreadable at a per-page level rather than a per-block level as in traditional erases.

Abstract: A method includes determining one or more quality attributes for memory cells of a memory device, receiving a memory access request involving data written to at least a portion of the memory cells, and determining whether the memory access request corresponds to a random read operation or a sequential read operation. The method further includes responsive to determining that the memory access request corresponds to a random read operation or responsive to determining that the one or more quality attributes for memory cells are greater than a threshold quality level, or both, selecting a read mode for use in performance of the random read operation and performing the random read operation using the selected read mode.

Abstract: Systems, apparatuses, and methods related to media management, including “garbage collection,” in memory or storage systems or sub-systems, such as solid state drives, are described. For example, a battery state associated with the memory system or sub-system may be used as an indicator or basis for managing a garbage collection operation on a data block. A controller or the system or sub-system may determine that a battery state or condition satisfies a criterion. Based on determining that the criterion is satisfied the, the garbage collection operation may be postponed until the battery state changes to satisfy a different battery condition.