Abstract: An apparatus for CMP includes a wafer carrier retaining a semiconductor wafer during a polishing operation, a slurry dispenser dispensing an abrasive slurry, and a slurry temperature control device coupled to the shiny dispenser and configured to control a temperature of the abrasive slurry. The slurry temperature control device includes a heat transferring portion surrounding a portion of the slurry dispenser, and a thermos-electric (TE) chip coupled to the heat transferring portion and configured to control the temperature of the abrasive slurry.

Abstract: A wafer polishing head is provided. The wafer polishing head includes a carrier head, a plurality of piezoelectric actuators disposed on the carrier head, and a membrane disposed over the plurality of piezoelectric actuators. The plurality of piezoelectric actuators is configured to provide mechanical forces on the membrane and generate an electrical charge when receiving counterforces of the mechanical forces through the membrane. A wafer polishing system and a method for polishing a substrate using the same are also provided.

Abstract: A wafer polishing head is provided. The wafer polishing head includes a carrier head, a plurality of piezoelectric actuators disposed on the carrier head, and a membrane disposed over the plurality of piezoelectric actuators. The plurality of piezoelectric actuators is configured to provide mechanical forces on the membrane and generate an electrical charge when receiving counterforces of the mechanical forces through the membrane. A wafer polishing system and a method for polishing a substrate using the same are also provided.

Abstract: A method for polishing a semiconductor substrate includes the following operations. A semiconductor substrate is received. An abrasive slurry having a first temperature is dispensed to a polishing surface of a polishing pad. The semiconductor substrate is polished. The abrasive slurry have a second temperature is dispensed to the polishing surface of the polishing pad during the polishing of the semiconductor substrate. The second temperature is different from the first temperature.

Abstract: A wafer polishing head is provided. The wafer polishing head includes a carrier head, a plurality of piezoelectric actuators disposed on the carrier head, and a membrane disposed over the plurality of piezoelectric actuators. The plurality of piezoelectric actuators is configured to provide mechanical forces on the membrane and generate an electrical charge when receiving counterforces of the mechanical forces through the membrane. A wafer polishing system and a method for polishing a substrate using the same are also provided.

Abstract: An apparatus for CMP includes a wafer carrier retaining a semiconductor wafer during a polishing operation, a slurry dispenser dispensing an abrasive slurry, and a slurry temperature control device coupled to the shiny dispenser and configured to control a temperature of the abrasive slurry. The slurry temperature control device includes a heat transferring portion surrounding a portion of the slurry dispenser, and a thermos-electric (TE) chip coupled to the heat transferring portion and configured to control the temperature of the abrasive slurry.

Abstract: An apparatus for CMP includes a platen, a wafer carrier retaining a semiconductor wafer during a polishing operation, a dresser configured to recondition a polishing pad disposed on the platen during the polishing operation, and a vibration-monitoring system configured to detect vibrations during the polishing operation. The vibration-monitoring system includes a first vibration sensor configured to generate a plurality of first vibration signals. An end point is triggered to the polishing when a change between the plurality of vibration signals reaches a value.

Abstract: An apparatus for CMP includes a platen, a wafer carrier retaining a semiconductor wafer during a polishing operation, a dress configured to recondition a polishing pad disposed on the platen during the polishing operation, and a vibration-monitoring system configured to detect vibrations during the polishing operation. The vibration-monitoring system includes a first vibration sensor configured to generate a plurality of first vibration signals. An end point is triggered to the polishing when a change between the plurality of vibration signals reaches a value.

Abstract: A chemical-mechanical polishing system has a first polishing apparatus configured to perform a first chemical-mechanical polish on a workpiece and a second polishing apparatus configured to perform a second chemical-mechanical polish on the workpiece. A rework polishing apparatus comprising a rework platen and a rework CMP head is configured to perform an auxiliary chemical-mechanical polish on the workpiece when the workpiece is positioned on the rework platen. A measurement apparatus measures one or more parameters of the workpiece, and a transport apparatus transports the workpiece between the first polishing apparatus, second polishing apparatus, rework polishing apparatus, and measurement apparatus. A controller determines a selective transport of the workpiece to the rework polishing apparatus by the transport apparatus only when the one or more parameters are unsatisfactory.

Abstract: A wafer polishing system including a platen configured to rotate in a first direction, and a polishing head configured to hold a wafer, the polishing head configured to rotate in a second direction. The wafer polishing system further includes an optical sensing system configured to detect a thickness of the wafer at a first location on the platen and a second location on the platen. A first distance from a center of the platen to the first location is different than a second distance from the center of the platen to the second location.

Abstract: A localized chemical mechanical polishing (CMP) platform is provided. A table is configured to support a workpiece with a to-be-polished surface. A polishing pad is spaced from the table with a width less than about half that of the table. The polishing pad is configured to individually polish rough regions of hillocks or valleys on the to-be-polished surface. A slurry distribution system is configured to apply slurry to an interface between the polishing pad and the workpiece. A cleaning system is configured to clean the workpiece in situ on the table. A drying system is configured to dry the workpiece in situ on the table. A method for CMP with local profile control and a system with local profile control are also provided.

Abstract: A localized chemical mechanical polishing (CMP) platform is provided. A table is configured to support a workpiece with a to-be-polished surface. A polishing pad is spaced from the table with a width less than about half that of the table. The polishing pad is configured to individually polish rough regions of hillocks or valleys on the to-be-polished surface. A slurry distribution system is configured to apply slurry to an interface between the polishing pad and the workpiece. A cleaning system is configured to clean the workpiece in situ on the table. A drying system is configured to dry the workpiece in situ on the table. A method for CMP with local profile control and a system with local profile control are also provided.

Abstract: The present disclosure relates to a two-phase cleaning element that enhances polishing pad cleaning so as to prevent wafer scratches and contamination in chemical mechanical polishing (CMP) processes. In some embodiments, the two-phase pad cleaning element comprises a first cleaning element and a second cleaning element configured to successively operate upon a section of a CMP polishing pad. The first cleaning element comprises a megasonic cleaning jet configured to utilize cavitation energy to dislodge particles embedded in the CMP polishing pad without damaging the surface of the polishing pad. The second cleaning element is configured to apply a high pressure mist, comprising two fluids, to remove by-products from the CMP polishing pad. By using megasonic cleaning to dislodge embedded particles a two-fluid mist to flush away by-products (e.g., including the dislodged embedded particles), the two-phase pad cleaning element enhances polishing pad cleaning.

Abstract: Among other things, one or more techniques or systems for particle removal from a semiconductor wafer are provided. Particles, contaminating a semiconductor wafer, have the potential to cause defects, such as scratches into a surface of the semiconductor wafer during chemical mechanical polishing or defocusing during a subsequent lithography stage, for the semiconductor wafer. Accordingly, a mechanic particle cleaner component, such as at least one of a sliver brush roller, a pencil brush, a tape polish, a sonic jet, or a liquid spray component, is configured to apply a mechanical force to an edge region of the semiconductor wafer to detach particles. A chemical particle cleaner component is configured to apply a chemical force to the edge region to detach particles. In this way, particles are removed from the semiconductor wafer before or after chemical mechanical polishing.

Abstract: A chemical-mechanical polishing system has a first polishing apparatus configured to perform a first chemical-mechanical polish on a workpiece and a second polishing apparatus configured to perform a second chemical-mechanical polish on the workpiece. A rework polishing apparatus comprising a rework platen and a rework CMP head is configured to perform an auxiliary chemical-mechanical polish on the workpiece when the workpiece is positioned on the rework platen. A measurement apparatus measures one or more parameters of the workpiece, and a transport apparatus transports the workpiece between the first polishing apparatus, second polishing apparatus, rework polishing apparatus, and measurement apparatus. A controller determines a selective transport of the workpiece to the rework polishing apparatus by the transport apparatus only when the one or more parameters are unsatisfactory.

Abstract: A method for cleaning a brush surface having a contamination is provided. The method includes steps of: providing a mechanical wave; and stripping off the contamination from the brush surface by the mechanical wave.

Abstract: Some embodiments relate to a chemical mechanical polishing (CMP) system. The CMP system includes a polishing pad having a polishing surface, and a wafer carrier to retain a wafer proximate to the polishing surface during polishing. A motor assembly rotates the polishing pad and concurrently rotates the wafer during polishing of the wafer. A conditioning disk has a conditioning surface that is in frictional engagement with the polishing surface during polishing. A torque measurement element measures a torque exerted by the motor assembly during polishing. A condition surface analyzer determines a surface condition of the conditioning surface or the polishing surface based on the measured torque. Other systems and methods are also disclosed.

Abstract: To provide improved planarization, techniques in accordance with this disclosure include a CMP station that includes a plurality of concentric temperature control elements arranged over a number of concentric to-be-polished wafer surfaces. During polishing, a wafer surface planarity sensor monitors relative heights of the concentric to-be-polished wafer surfaces, and adjusts the temperatures of the concentric temperature control elements to provide an extremely well planarized wafer surface. Other systems and methods are also disclosed.

Abstract: The present disclosure relates to a two-phase cleaning element that enhances polishing pad cleaning so as to prevent wafer scratches and contamination in chemical mechanical polishing (CMP) processes. In some embodiments, the two-phase pad cleaning element comprises a first cleaning element and a second cleaning element configured to successively operate upon a section of a CMP polishing pad. The first cleaning element comprises a megasonic cleaning jet configured to utilize cavitation energy to dislodge particles embedded in the CMP polishing pad without damaging the surface of the polishing pad. The second cleaning element is configured to apply a high pressure mist, comprising two fluids, to remove by-products from the CMP polishing pad. By using megasonic cleaning to dislodge embedded particles a two-fluid mist to flush away by-products (e.g., including the dislodged embedded particles), the two-phase pad cleaning element enhances polishing pad cleaning.

Abstract: A CMP polishing head having multiple concentric pressure zones for selectively increasing polishing pressure against selected regions of a semiconductor wafer in order to compensate for variations in polishing rates on the wafer surface otherwise caused by ridges or other non-uniformities in the wafer surface. The polishing head of the present invention comprises multiple, concentric, inflatable pressure rings each of which may be selectively inflated to increase the polishing pressure against a concentric ridge or material elevation on the corresponding concentric region of the wafer surface and increase the polishing rate of the concentric ridge or elevation between the rotating polishing head and a stationary polishing pad. A channel selector may be included in the polishing head for selectively aligning an air/pressure vacuum source with a selected one of multiple pressure tubes that connect to the respective pressure rings.