Patents by Inventor Jiaxi HU

Jiaxi HU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11966544
    Abstract: An electronic device may have a display with touch sensors. One or more shielding layers may be interposed between the display and the touch sensors. The display may include transistors with gate conductors, a first planarization layer formed over the gate conductors, one or more contacts formed in a first source-drain layer within the first planarization layer, a second planarization layer formed on the first planarization layer, one or more data lines formed in a second source-drain layer within the second planarization layer, a third planarization layer formed on the second planarization layer, and a data line shielding structure formed at least partly in a third source-drain layer within the third planarization layer. The data line shielding structure may be a routing line, a blanket layer, a mesh layer formed in one or more metal layers, and/or a data line covering another data line.
    Type: Grant
    Filed: May 25, 2023
    Date of Patent: April 23, 2024
    Assignee: Apple Inc.
    Inventors: Shinya Ono, Suhwan Moon, Dong-Gwang Ha, Jiaxi Hu, Hao-Lin Chiu, Kwang Soon Park, Hassan Edrees, Wen-I Hsieh, Jiun-Jye Chang, Chin-Wei Lin, Kyung Wook Kim
  • Publication number: 20240036680
    Abstract: An electronic device may have a display with touch sensors. One or more shielding layers may be interposed between the display and the touch sensors. The display may include transistors with gate conductors, a first planarization layer formed over the gate conductors, one or more contacts formed in a first source-drain layer within the first planarization layer, a second planarization layer formed on the first planarization layer, one or more data lines formed in a second source-drain layer within the second planarization layer, a third planarization layer formed on the second planarization layer, and a data line shielding structure formed at least partly in a third source-drain layer within the third planarization layer. The data line shielding structure may be a routing line, a blanket layer, a mesh layer formed in one or more metal layers, and/or a data line covering another data line.
    Type: Application
    Filed: May 25, 2023
    Publication date: February 1, 2024
    Inventors: Shinya Ono, Suhwan Moon, Dong-Gwang Ha, Jiaxi Hu, Hao-Lin Chiu, Kwang Soon Park, Hassan Edrees, Wen-I Hsieh, Jiun-Jye Chang, Chin-Wei Lin, Kyung Wook Kim
  • Patent number: 10923012
    Abstract: An electronic device may include a display. The display may include display driver circuitry that is configured to provide image data to columns of pixels and gate driver circuitry that is configured to provide control signals to rows of pixels. The display may be operable at a native refresh rate that is equal to the highest refresh rate at which the display has full resolution. The display may also be operable in a high refresh rate mode with a high refresh rate that is twice (or some other scaling factor greater than) the native refresh rate. To enable operation at the high refresh rate mode, vertical resolution of the display may be sacrificed. In other words, rows of pixels may be grouped together into effective rows that are then scanned in sequence. The gate driver circuitry may be formed as thin-film transistor circuitry or from gate driver integrated circuits.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: February 16, 2021
    Assignee: Apple Inc.
    Inventors: Jiaxi Hu, Hao-Lin Chiu, Shatam Agarwal, Kwang Soon Park, Joonggun Lee, Kyung Wook Kim, Shih Chang Chang, Fenghua Zheng
  • Publication number: 20180284181
    Abstract: Disclosed are an on-line health management device and an on-line health management method for an insulated gate bipolar transistor. The device comprises: an electrothermal detection module, configured to detect a junction temperature and a temperature rise of the insulated gate bipolar transistor based on operating condition parameters of the insulated gate bipolar transistor in combination with a structure of the insulated gate bipolar transistor; a degradation detection module, configured to detect a performance degradation degree of the insulated gate bipolar transistor based on the operating condition parameters, the structure, the junction temperature and the temperature rise of the insulated gate bipolar transistor; and a lifetime detection module, configured to detect a consumed lifetime of the insulated gate bipolar transistor based on the performance degradation degree thereof.
    Type: Application
    Filed: November 1, 2016
    Publication date: October 4, 2018
    Applicant: CRRC Zhuzhou Institute Co., Ltd.
    Inventors: Wenye LIU, Jinfeng YANG, Jiaxi HU, Yanyong LI, Jianbo LUO, Hangjie FU