Abstract: The invention introduces a method for handling sudden power off recovery, performed by a processing unit of an electronic apparatus, to include: driving a flash interface to program data sent by a host into pseudo single-level cell (pSLC) blocks of multiple logical unit numbers (LUNs) in a single-level cell (SLC) mode with multiple channels after detecting that the electronic apparatus has suffered a sudden power off (SPO), and driving the flash interface to erase memory cells of all the pSLC blocks when data of all pSLC blocks has been read by the host. The pSLC blocks are reserved from being written to in regular operations until the SPO is detected.

Abstract: A storage device includes a flash memory array and a controller. The flash memory array stores a plurality of user data. After the controller finishes initialization, the controller accesses the user data stored in the flash memory array according to a plurality of host commands and an H2F mapping table, and records a plurality of address information about the user data in a powered-ON access table.

Abstract: The invention introduces a method for handling sudden power off recovery, performed by a processing unit of an electronic apparatus, to include: driving a flash interface to program data sent by a host into pseudo single-level cell (pSLC) blocks of multiple logical unit numbers (LUNs) in a single-level cell (SLC) mode with multiple channels after detecting that the electronic apparatus has suffered a sudden power off (SPO), and driving the flash interface to erase memory cells of all the pSLC blocks when data of all pSLC blocks has been read by the host. The pSLC blocks are reserved from being written to in regular operations until the SPO is detected.

Abstract: The invention introduces a method for handling sudden power off recovery, performed by a processing unit of an electronic apparatus, to include: driving a flash interface to program data sent by a host into pseudo single-level cell (pSLC) blocks of multiple logical unit numbers (LUNs) in a single-level cell (SLC) mode with multiple channels after detecting that the electronic apparatus has suffered a sudden power off (SPO). The pSLC blocks are reserved from being written any data in regular operations until the SPO is detected.

Abstract: A method for performing refresh management in a memory device, the memory device and controller thereof are provided. The method may include: monitoring a temperature of the memory device, wherein the temperature is detected through a temperature sensor; updating a recorded highest temperature and a recorded lowest temperature according to said temperature; checking whether a difference between the recorded highest temperature and the recorded lowest temperature is greater than a predetermined temperature threshold; and when the difference is greater than the predetermined temperature threshold, triggering refresh of the memory device.

Abstract: The invention introduces a method for handling sudden power off recovery, performed by a processing unit of an electronic apparatus, to include: driving a flash interface to program data sent by a host into pseudo single-level cell (pSLC) blocks of multiple logical unit numbers (LUNs) in a single-level cell (SLC) mode with multiple channels after detecting that the electronic apparatus has suffered a sudden power off (SPO). The pSLC blocks are reserved from being written any data in regular operations until the SPO is detected.

Abstract: A storage device includes a flash memory array and a controller. The flash memory array stores a plurality of user data. After the controller finishes initialization, the controller accesses the user data stored in the flash memory array according to a plurality of host commands and an H2F mapping table, and records a plurality of address information about the user data in a powered-ON access table.

Abstract: A storage device includes a flash memory array and a controller. The flash memory array stores a plurality of user data. After the controller finishes initialization, the controller accesses the user data stored in the flash memory array according to a plurality of host commands and an H2F mapping table, and records a plurality of address information about the user data in a powered-ON access table.

Abstract: A hybrid data storage device is shown. In addition to a non-volatile memory, the hybrid data storage device has a volatile memory. A microcontroller of the data storage device generates and maintains a first mapping table and a second mapping table. According to the first mapping table, specific logical addresses are mapped to the volatile memory. The second mapping table records mapping information between logical addresses, including the specific logical addresses, and the non-volatile memory. When the data storage device is powered on, the microcontroller uploads data read from the non-volatile memory to the volatile memory according to the first mapping table and the second mapping table.

Abstract: A method for performing refresh management in a memory device, the memory device and controller thereof are provided. The method may include: monitoring a temperature of the memory device, wherein the temperature is detected through a temperature sensor; updating a recorded highest temperature and a recorded lowest temperature according to said temperature; checking whether a difference between the recorded highest temperature and the recorded lowest temperature is greater than a predetermined temperature threshold; and when the difference is greater than the predetermined temperature threshold, triggering refresh of the memory device.

Abstract: A storage device includes a flash memory array and a controller. The flash memory array includes a plurality of blocks which are configured to store data. The controller scans the flash memory array during an idle time to confirm the accuracy of the data stored in the flash memory array.

Abstract: A storage device includes a flash memory array and a controller. The flash memory array stores a plurality of user data. After the controller finishes initialization, the controller accesses the user data stored in the flash memory array according to a plurality of host commands and an H2F mapping table, and records a plurality of address information about the user data in a powered-ON access table.

Abstract: A hybrid data storage device. In addition to a non-volatile memory, the hybrid data storage device has a volatile memory. The volatile memory is allocated to provide a specific-use area to share the burden of data storage of the non-volatile memory. Data written into the specific-use area is retained in the specific-use area to respond to a read request.

Abstract: A data storage device including a flash memory, a temperature sensor and a controller. The flash memory has a plurality of blocks, and each of the blocks has a plurality of pages. The temperature sensor detects surrounding ambient temperature and to produce a temperature parameter accordingly. The controller is arranged to perform a first maintenance procedure after a predetermined period since the data storage device is powered on. The controller reads the temperature sensor to obtain a first temperature parameter in the first maintenance procedure and determines a first time span according to a first predetermined condition for performing a second maintenance procedure, wherein the first predetermined condition includes the first temperature parameter, and the controller is further arranged to perform the second maintenance procedure after the first time span since the first maintenance procedure has finished.

Abstract: A data storage device including a flash memory, a temperature sensor, and a controller. The temperature sensor detects surrounding ambient temperature. The controller reads the temperature sensor to obtain a current temperature parameter at a predetermined time, compares a plurality of write temperatures of the blocks with the current temperature parameter one by one, and writes data stored in at least one first block of the blocks into at least one third block of the blocks, wherein the first block corresponds to at least one first write temperature of the write temperatures, and the difference between the first write temperature and the current temperature parameter is greater than a predetermined value.

Abstract: A data storage device including a flash memory, a temperature sensor and a controller. The flash memory has a plurality of blocks, and each of the blocks has a plurality of pages. The temperature sensor detects surrounding ambient temperature and to produce a temperature parameter accordingly. The controller is arranged to perform a first maintenance procedure after a predetermined period since the data storage device is powered on. The controller reads the temperature sensor to obtain a first temperature parameter in the first maintenance procedure and determines a first time span according to a first predetermined condition for performing a second maintenance procedure, wherein the first predetermined condition includes the first temperature parameter, and the controller is further arranged to perform the second maintenance procedure after the first time span since the first maintenance procedure has finished.

Abstract: A data storage device including a flash memory, a temperature sensor and a controller. The flash device is arranged to store data. The temperature sensor is arranged to detect surrounding ambient temperature. The controller is configured to receive a write command from a host, and perform a protection mechanism when the detected surrounding ambient temperature is outside a predetermined rage, wherein the write command is arranged to enable the controller to write data into the flash, and the controller is configured to restrict writing during the protect mode.

Abstract: A method for operating a non-volatile memory is provided. The non-volatile memory includes a plurality of physical blocks having a plurality of data blocks and spare blocks. An index is obtained by comparing an average erase count of selected physical blocks with a first threshold. Each erase count for each physical block is the total number of the erase operations performed thereon. A performance capability status for the memory is determined according to the index. The performance capability status is set to a first status when the average erase count exceeds the first threshold. An indication is generated based on the performance capability status. A limp function is performed in response to the first status for configuring a minimum number of the at least some spare blocks reserved and used for data update operations.

Abstract: A method for operating a non-volatile memory is provided. The non-volatile memory includes a plurality of physical blocks having a plurality of data blocks and spare blocks. An index is obtained by comparing an average erase count of selected physical blocks with a first threshold. Each erase count for each physical block is the total number of the erase operations performed thereon. A performance capability status for the memory is determined according to the index. The performance capability status is set to a first status when the average erase count exceeds the first threshold. An indication is generated based on the performance capability status. A limp function is performed in response to the first status for configuring a minimum number of the at least some spare blocks reserved and used for data update operations.

Abstract: A method for operating a non-volatile memory is provided. The non-volatile memory includes a plurality of physical blocks having a plurality of data blocks and spare blocks. An index is obtained by comparing an average erase count of selected physical blocks with a first threshold. Each erase count for each physical block is the total number of the erase operations performed thereon. A performance capability status for the memory is determined according to the index. The performance capability status is set to a first status when the average erase count exceeds the first threshold. An indication is generated based on the performance capability status. A limp function is performed in response to the first status for configuring a minimum number of the at least some spare blocks reserved and used for data update operations.