Abstract: A system and method for preparing epoxy chloropropane is provided in that by coupling three stages of high gravity reactors, the product epoxy chloropropane and water vapor are distilled from a reaction system in form of an azeotrope by adopting a water vapor steam stripping method. Further, by combining the azeotrope with the multiples stages of high gravity reactors, the gas phase mass transfer and the liquid phase mass transfer of the azeotrope are improved aiming at the features of the azeotrope in the reaction system, thus making the overall conversion rate higher. In addition, by combining steam stripping and high gravity, dichloropropanol and alkali solution are rapidly mixed for mass transfer, and the product epoxy chloropropane is rapidly distilled from the reaction system in the form of the azeotrope, such that the reaction proceeds continuously towards the direction of producing epoxy chloropropane, thus significantly improving the conversion rate.

Abstract: A method for operating an electronic device includes while a display is in low power mode, detecting based on data collected by a time of flight (ToF) sensor, a movable object within a field of view of the electronic device; in response to the detecting initiating a period of detection having a plurality of frames, the period of detection being a time period over which a distance value indicative of a distance between the movable object and the display is detected; for each of the plurality of frames, changing the distance value to reflect whether the movable object is moving near or further from the electronic device; detecting that the distance value after the period of detection is less than a threshold distance value indicative of the movable object approaching the display; if the distance value is less than the threshold distance value, waking up the display.

Abstract: A method of performing 3D printing of a silicon component includes adding powdered silicon to a 3D printing tool. For each the powdered silicon, forming a layer of the powder bed to a pre-determined thickness, directing a high-powered beam in a pre-determined pattern into the powder-bed to melt the powdered silicon. After no further layers are needed, the silicon component is cooled at a pre-determined temperature ramp-down rate. In a fully dense printing method, buffer layers of silicon are initially printed on a steel substrate, and then layers of silicon for the actual component are printed on top of the buffer layers using a double printing method. In a fully dense and crack free printing method, one or more heaters and thermal insulation are used to minimize temperature gradient during Si printing, in-situ annealing, and cooling.

Abstract: Resource state validation may be performed for access management policies by an identity and access management system. An access management policy associated with an account for network-based services may be received and validated according to resource state obtained for resources associated with the account. A correction for a portion of the access management policy may be identified according to the validation and provided via an interface for the identity and access management system.

Abstract: In a fully dense printing method, a plurality of buffer layers of silicon are initially printed on a steel substrate, and then layers of silicon for the actual component are printed on top of the buffer layers using a double printing method. In a fully dense and crack free printing method, one or more heaters and thermal insulation are used to minimize temperature gradient during Si printing, in-situ annealing, and cooling.

Abstract: A system comprises an apparatus having a nozzle. An element is arranged around the apparatus. A feeder is configured to supply a powder of a material into the apparatus. A gas source is configured to supply a precursor gas into the apparatus and to supply an inert gas to circulate through a space between the element and the apparatus and to exit around the nozzle. A plasma generator is arranged in the apparatus and is configured to ionize the precursor gas and atomize the powder and to eject through the nozzle a jet of particles composed of the atomized powder and the ionized precursor gas onto a substrate arranged adjacent to the nozzle.

Abstract: Resource state validation may be performed for access management policies by an identity and access management system. An access management policy associated with an account for network-based services may be received and validated according to resource state obtained for resources associated with the account. A correction for a portion of the access management policy may be identified according to the validation and provided via an interface for the identity and access management system.

Abstract: Resource state validation may be performed for access management policies by an identity and access management system. An access management policy associated with an account for network-based services may be received and validated according to resource state obtained for resources associated with the account. A correction for a portion of the access management policy may be identified according to the validation and provided via an interface for the identity and access management system.

Abstract: A plasma confinement ring for a plasma chamber comprises a ring-shaped element and a cylindrical element. The ring-shaped element of the plasma confinement ring surrounds a substrate support assembly in the plasma chamber and is arranged along a plane in which a substrate is arranged on the substrate support assembly. The ring-shaped element includes a plurality of orifices. The cylindrical element of the plasma confinement ring extends from an outer edge of the ring-shaped element in a direction perpendicular to the plane in which the substrate is arranged on the substrate support assembly in the plasma chamber. The plasma confinement ring is monolithic.

Abstract: The invention provides a NC control method and a NC control apparatus for implementing the method. The method comprises: acquiring a first NC code and a second NC code, wherein the first NC code comprises first machining information for controlling a tool to machine a workpiece, and the second NC code comprises second machining information for enhancing the first machining information; simultaneously running the first NC code and the second NC code to parse out the first machining information and the second machining information; merging the first machining information and the second machining information; and controlling the tool to machine the workpiece according to the result of the merging. The invention also provides a NC control apparatus and a computer storage medium for machining controlled both by the first and the second NC code.

Abstract: A plasma confinement ring for a plasma chamber comprises a ring-shaped element and a cylindrical element. The ring-shaped element of the plasma confinement ring surrounds a substrate support assembly in the plasma chamber and is arranged along a plane in which a substrate is arranged on the substrate support assembly. The ring-shaped element includes a plurality of orifices. The cylindrical element of the plasma confinement ring extends from an outer edge of the ring-shaped element in a direction perpendicular to the plane in which the substrate is arranged on the substrate support assembly in the plasma chamber. The plasma confinement ring is monolithic.

Abstract: A system comprises a silicon seed arranged on a pedestal, where the silicon seed is ring shaped and is configured to receive melted silicon at a feed rate to form an ingot, and where the pedestal is configured to rotate at a rotational speed. A controller is configured to, while the silicon seed receives the melted silicon and while the ingot is forming: receive feedback regarding a diameter of the ingot and regarding an angle of a meniscus of the ingot, and control the rotational speed of the pedestal and the feed rate of the melted silicon based on the feedback to control the diameter of the ingot and the angle of the meniscus of the ingot.

Abstract: An apparatus for doping a melt of semiconductor or solar-grade material is provided. The apparatus includes a seed chuck, a seed crystal connected to the seed chuck, and a dopant container connected to the seed chuck. The seed chuck defines a first end of the apparatus, and the seed crystal defines a second end of the apparatus. The seed crystal is configured to initiate crystal growth when placed in contact with the melt. The dopant container is positioned between the first end and the second end of the apparatus, and defines a reservoir for holding dopant therein. The dopant container is configured to dispense liquid dopant into the melt when positioned proximate the melt. The dopant container and the seed crystal are connected to the seed chuck simultaneously.

Abstract: Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.

Abstract: The invention provides a NC control method and a NC control apparatus for implementing the method. The method comprises: acquiring a first NC code and a second NC code, wherein the first NC code comprises first machining information for controlling a tool to machine a workpiece, and the second NC code comprises second machining information for enhancing the first machining information; simultaneously running the first NC code and the second NC code to parse out the first machining information and the second machining information; merging the first machining information and the second machining information; and controlling the tool to machine the workpiece according to the result of the merging. The invention also provides a NC control apparatus and a computer storage medium for machining controlled both by the first and the second NC code.

Abstract: Production of silicon ingots in a crystal puller that involve reduction of the erosion rate at the crucible contact point are disclosed.

Abstract: Methods for growing single crystal ingots doped with volatile dopants and ingots grown according to the methods are described herein.

Abstract: A system comprises a silicon seed arranged on a pedestal, where the silicon seed is ring shaped and is configured to receive melted silicon at a feed rate to form an ingot, and where the pedestal is configured to rotate at a rotational speed.

Abstract: This disclosure discloses a constant-temperature controlled circuit for an electric heating device, comprises an AC/DC switching circuit, a heating strip and a temperature controlled circuit; the heating strip comprises a heating line, a temperature sensing line and a NTC layer located between the heating line and the temperature sensing line; the temperature controlled circuit comprises a central processing unit, a voltage sampling circuit, a TRIAC circuit and a load detection circuit. Compared with existing technology, in the heating process, resistance of the NTC layer decreases as the temperature increases, since the heating strip and the voltage sampling circuit are connected in series, the output sample voltage of the voltage sampling circuit reflects the current temperature, and then the central processing unit outputs controls to switch the TRIAC circuit on or off according to the sample voltage, keeping the device at a constant temperature. Constant temperature control is realized.

Abstract: A method includes providing a first part, a second part and a bonding material between the first part and the second part. The first part and the second part are made of a first material selected from a group consisting of silicon and germanium. The bonding material includes a second material that is different than the first material. The method includes arranging the first part, the bonding material, and the second part in a furnace; and creating a bonded part by heating the first part, the second part and the bonding material to a predetermined temperature for a predetermined period followed by a predetermined solidification period. The predetermined temperature is greater than 1.5 times a eutectic temperature of an alloy including the first material and the second material and less than a melting temperature of the first material.