Abstract: A powertrain for an electric vehicle includes: a planetary gear including a first rotating element, a second rotating element, and a third rotating element, where the first rotating element is connected to a first shaft, the second rotating element is connected to a second shaft, and the third rotating element is selectively connected to a transmission housing; a first motor supplying power to the first shaft at all times; and a second motor selectively supplying power to the first shaft and the second shaft. Two rotating elements among the first, second, third rotating elements of the planetary gear are selectively connected to integrally rotate the entire planetary gear.

Abstract: A memory device includes a first semiconductor structure including pass transistors defined in a row decoder region of a substrate, a first bonding layer including first bonding pads, and bottom wiring layers disposed between the substrate and the first bonding layer; a second semiconductor structure including a second bonding layer including second bonding pads bonded to the first bonding pads, a memory cell array, and a top wiring layer disposed between the second bonding layer and the memory cell array; and global lines disposed in the row decoder region, and configured to transfer operating voltages to the pass transistors, wherein the bottom wiring layers include bottom wiring layers of a first tier and bottom wiring layers of a second tier disposed over the bottom wiring layers of the first tier, and the global lines are disposed in at least one of the bottom wiring layers of the first tier.

Abstract: Disclosed is an optical system for imaging, which enables high resolution. An optical system for imaging, which focuses inspection light and monitoring light on an inspection target, includes a dioptric group configured to receive inspection light and monitoring light and to primarily focus the inspection light and the monitoring light on different locations, and a reflection dioptric group configured to reflect and refract the inspection light and the monitoring light that have passed through the dioptric group and to bring the inspection light and the monitoring light into one focus.

Abstract: A powertrain for an electric vehicle includes: a planetary gear including a first rotating element, a second rotating element, and a third rotating element, where the first rotating element is connected to a first shaft, the second rotating element is connected to a second shaft, and the third rotating element is selectively connected to a transmission housing; a first motor supplying power to the first shaft at all times; and a second motor selectively supplying power to the first shaft and the second shaft. Two rotating elements among the first, second, third rotating elements of the planetary gear are selectively connected to integrally rotate the entire planetary gear.

Abstract: A semiconductor memory device includes a memory cell array disposed over a substrate extending in a first direction and a second direction intersecting with the first direction in a first semiconductor layer, and including a plurality of cell units and at least two via regions that are arranged in the second direction, wherein a width of each of the at least two via regions in the second direction is a multiple of a width of each of the plurality of cell units in the second direction.

Abstract: A method for manufacturing a three-dimensional memory device, comprises: forming, on a substrate, a sacrificial layer including a plurality of sacrificial patterns for vias and a sacrificial pattern for a row line; forming an interlayer dielectric layer that covers the sacrificial pattern for a row line and the sacrificial pattern for a via coupled to the sacrificial pattern for a row line and that has a plurality of holes exposing sacrificial patterns for vias, from among the plurality of sacrificial patterns for vias, that are not coupled to the sacrificial pattern for a row line; forming a plurality of first conductive patterns in the plurality of holes; repeating the forming of the sacrificial layer; and replacing the plurality of sacrificial layers with a conductive material.

Abstract: A memory device includes a pass transistor circuit included in a first wafer, and configured to transfer an operating voltage to row lines of a memory cell array; and a discharge transistor circuit included in a second wafer that overlaps with the first wafer in a vertical direction, and configured to transfer a discharge voltage to at least one of the row lines.

Abstract: A memory device includes a substrate defined with a first cell region and a second cell region, and a row decoder region between the first and second cell regions; a peripheral circuit defined in the first and second cell regions of the substrate; pass transistors defined in the row decoder region of the substrate; bottom wiring layers disposed in a first dielectric layer covering the peripheral circuit and the pass transistors; a memory cell array defined on the first dielectric layer; a second dielectric layer defined on the first dielectric layer, and covering the memory cell array; top wiring layers disposed in a third dielectric layer defined on the second dielectric layer; and global lines disposed in the row decoder region, and configured to transfer operating voltages to the pass transistors, wherein the global lines are disposed only in at least one bottom wiring layer from among the bottom and top wiring layers.

Abstract: A powertrain for an electric vehicle includes: a planetary gear including a first rotating element, a second rotating element, and a third rotating element, where the first rotating element is connected to a first shaft, the second rotating element is connected to a second shaft, and the third rotating element is connected to a third shaft; a first motor supplying power to the first shaft at all times; and a second motor selectively supplying power to the first shaft and the second shaft. The third shaft is fixedly connected to a transmission housing, and any two shafts among the first, second and third shafts restrain each other.

Abstract: A device for mounting a leap block capable of automatically adjusting the mounting direction of the leap block comprises a block stand fixedly mounted to one end of a blocking device frame and configured to support a leap block so that the leap block is rotatable in a horizontal direction; the leap block in which a support rotatably supported by the block stand is formed in the center, and a first magnetic body is mounted in one direction; and a leap block mounting unit to which a second magnetic body that couples with the first magnetic body by magnetic force is mounted in one direction, and which rotates in the horizontal direction and couples with the leap block in a fixed direction.

Abstract: A memory device includes an active region with a drain; a plurality of memory blocks arranged in a first direction; and a plurality of pass transistors formed in the active region and sharing the drain, each one of the plurality of pass transistors configured to transfer an operating voltage from the drain to a corresponding one of the plurality of memory blocks in response to a block select signal. The plurality of pass transistors is divided into first pass transistors and second pass transistors. A channel length direction of the first pass transistors and a channel length direction of the second pass transistors are different from each other.

Abstract: A three-dimensional memory device includes a first electrode structure and a second electrode structure extending in a first direction, being adjacent to each other in a second direction intersecting with the first direction, and each including a plurality of electrode layers and a plurality of interlayer dielectric layers which are alternately stacked on a source plate; a plurality of first slimming holes formed in the first electrode structure to expose pad regions of the electrode layers of the first electrode structure, and arranged in the first direction; and a plurality of second slimming holes formed in the second electrode structure to expose pad regions of the electrode layers of the second electrode structure, and arranged in the first direction, wherein a first slimming hole and a second slimming hole which are adjacent in the second direction have different depths.

Abstract: A three-dimensional memory device includes a plurality of row lines stacked alternately with a plurality of interlayer dielectric layers in a vertical direction on a substrate, and each of the plurality of row lines having a projection from a side surface thereof; and a plurality of vias extending in the vertical direction from the substrate, each coupled to the projection of a corresponding row line, and electrically coupling the plurality of row lines to a peripheral circuit defined below the substrate.

Abstract: A virtual device acquires a transaction history between a legacy computing device and a linked device; obtains a first request provided from the legacy computing device based on the transaction history and a first response received from the linked device in response to the first request; receives a second request corresponding to the first request from a new computing device and determines a second response to the second request; and provides test information for the new computing device based on a comparison of the first response and the second response.

Abstract: The present invention relates to an artificial bladder system having a double space divided by a partition wall and a wireless, non-powered urine fullness sensor using an RFID technology, which provides an artificial bladder system comprising: an outer wall that forms the outer shape of the artificial bladder, is inserted into the body, and has an inner space; a partition wall, wherein both ends are fixed to the inside of the outer wall, the inner space of the outer wall is divided into a double space of a urine reservoir and a working fluid space, and it is deformable according to amounts of the urine and the working fluid; and a urine fullness sensor installed in the working fluid space and sensing a urine fullness degree based on the deformation of the partition wall.

Abstract: A three-dimensional semiconductor memory device may include a cell wafer including a source plate, a plurality of first word lines stacked to be spaced apart from one another along a plurality of first vertical channels projecting from a bottom surface of the source plate in a vertical direction, and a plurality of second word lines stacked to be spaced apart from one another along a plurality of second vertical channels projecting from a top surface of the source plate in a vertical direction; a first peripheral wafer bonded to a bottom surface of the cell wafer, and including a first row decoder unit which transfers an operating voltage to the plurality of first word lines; and a second peripheral wafer bonded to a top surface of the cell wafer, and including a second row decoder unit which transfers an operating voltage to the plurality of second word lines.

Abstract: The present invention may provide a motor including a housing, a cover which covers the housing, a stator disposed inside the housing, a rotor disposed inside the stator, a rotary shaft coupled to the rotor, a bearing disposed on the cover, and a nut which is coupled to the cover and which is in contact with an outer ring of the bearing, wherein the cover incudes a first pocket accommodating the bearing and a second pocket which is disposed above the first pocket and to which the nut is rotation-coupled, the nut includes a body disposed to be lower than an upper surface of the cover and including a screw thread and an extension portion disposed to be higher than the upper surface of the cover, the body incudes a protrusion protruding outward from the screw thread, and the second pocket includes a first groove in which the protrusion is positioned.

Abstract: A memory device includes a plurality of bit lines extending in a first direction and arranged in a second direction; and a cell region including a plane which is coupled to the plurality of bit lines, wherein the plane is divided into a plurality of memory groups each including a plurality of partial pages to be disposed in a plurality of rows in the first direction.

Abstract: Provided is an apparatus for tightening wire, including: a housing (10); a spool (20) mounted to the housing to wind a wire; a winder (30) that engages with the spool to wind the wire or disengages from the same to unwind the wire; a ratchet (40) that allows axial rotation in one direction in which the wire is tightened; a spiral cam (50) where the winder and the ratchet are mounted; and a dial (60) mounted to the spiral cam to axially rotate the winder. The apparatus provides an engagement and disengagement structure that allows the spool and the winder to engage or disengage, so that, by forward and backward rotations, only the wire is wound when the spool and the winder engage and the wire is unwound when the spool and the winder disengage, thereby allowing the winding and unwinding of the wire by simple forward and backward rotating operation.

Abstract: A memory device includes a pass transistor circuit included in a first wafer, and configured to transfer an operating voltage to row lines of a memory cell array; and a discharge transistor circuit included in a second wafer that overlaps with the first wafer in a vertical direction, and configured to transfer a discharge voltage to at least one of the row lines.