Abstract: A Doherty amplifier is provided. The Doherty amplifier includes a first path circuit including a carrier amplifier and a first impedance adjusting circuit connected with the carrier amplifier; and a second path circuit including a peaking amplifier, a second impedance adjusting circuit connected with the peaking amplifier, and a peaking amplifier bias circuit connected with the peaking amplifier. At least one among an impedance of the first impedance adjusting circuit, an impedance of the second impedance adjusting circuit, and a bias of the peaking amplifier bias circuit is adjusted in response to a control signal.

Abstract: A system for power facility navigation is disclosed. For rapid dispatch in the field service including power failure recovery and maintenance, the destination location can be set using various items such as pole numbers, computerization codes, customer names, trade names, equipment numbers and GIS coordinates. Destination location setting and path finding can be performed in order of priorities assigned to these items and in consideration of characteristics of field service activities. Location coordinates are received through a GPS receiver, coordinate conversion is performed according to a facility GIS coordinate system, and map matching is processed when GPS coordinates do not match facility GIS coordinates. The road network database is composed of linear array structures and the structure of a link is configured to include information regarding all other links connected to the start node and end node in a manner that link information and node attributes are integrated together.

Abstract: A Doherty amplifier is provided. The Doherty amplifier includes a first path circuit including a carrier amplifier and a first impedance adjusting circuit connected with the carrier amplifier; and a second path circuit including a peaking amplifier, a second impedance adjusting circuit connected with the peaking amplifier, and a peaking amplifier bias circuit connected with the peaking amplifier. At least one among an impedance of the first impedance adjusting circuit, an impedance of the second impedance adjusting circuit, and a bias of the peaking amplifier bias circuit is adjusted in response to a control signal.

Abstract: A semiconductor manufacturing apparatus and a wafer loading/unloading method thereof increase productivity.

Abstract: A bias circuit for a smart power amplifier includes a high power mode bias circuit and a low power mode bias circuit, and operates only one of the bias circuits selectively using a switching circuit according to an input signal. Therefore, the bias circuit of high power mode and the bias circuit of the low power mode are divided and can be optimized according to characteristics of the power. Accordingly, a gain difference with respect to each power can be minimized and the low power mode can be controlled with a small amount of current in a state of initial current with a low power and in a middle power, such that an efficiency of the power amplifier can be improved at low power.

Abstract: The present invention relates to a remote meter reading system using a grouped data structure. The central processing unit of the electronic electric power meter collects the data having similar function and groups the same. Each group is classified into main items, and each main item is classified into sub-items and is stored in the memory apparatus, and when a data transmission request signal of the wired and wireless meter reading terminal and the remote meter reading server is inputted in accordance with a data address system corresponding to a grouped data stored in the memory apparatus, a collecting data corresponding to the data address system that the data transmission request signal represents is selected, and is transmitted to the wired and wireless meter reading terminal and the remote meter reading server, respectively.

Abstract: A bias circuit for a smart power amplifier includes a high power mode bias circuit and a low power mode bias circuit, and operates only one of the bias circuits selectively using a switching circuit according to an input signal. Therefore, the bias circuit of high power mode and the bias circuit of the low power mode are divided and can be optimized according to characteristics of the power. Accordingly, a gain difference with respect to each power can be minimized and the low power mode can be controlled with a small amount of current in a state of initial current with a low power and in a middle power, such that an efficiency of the power amplifier can be improved at low power.

Abstract: A heterojunction bipolar transistor and its fabrication method is disclosed. The heterojunction bipolar transistor includes a substrate; a collector layer formed to have a ledge or MESA on the substrate; a collector electrode formed on the collector layer surrounding the ledge; a base layer formed on the ledge of the collector layer; an ohmic cap layer on the emitter layer; an emitter layer formed in the center of the base layer; an emitter electrode formed on the ohmic cap layer; a base electrode formed on the base layer surrounding the emitter electrode; an insulating layer formed to cover the base electrode and to overlay on the insulating layer; a metal wire formed to cover the emitter electrode; and an air bridge brought in contact with the metal wire and electrically connected to an external pad lying on an ion-implanted isolation region.

Abstract: A heterojunction bipolar transistor and its fabrication method is disclosed. The heterojunction bipolar transistor includes a substrate; a collector layer formed to have a ledge or MESA on the substrate; a collector electrode formed on the collector layer surrounding the ledge; a base layer formed on the ledge of the collector layer; an ohmic cap layer on the emitter layer; an emitter layer formed in the center of the base layer; an emitter electrode formed on the ohmic cap layer; a base electrode formed on the base layer surrounding the emitter electrode; an insulating layer formed to cover the base electrode and to overlay on the insulating layer; a metal wire formed to cover the emitter electrode; and an air bridge brought in contact with the metal wire and electrically connected to an external pad lying on an ion-implanted isolation region.

Abstract: A resonant convertor control system regulates a resonant AC current based on the amount of input power consumed by the system. The switching frequency and resonant AC current are limited by a phase difference assurance circuit that compares the phase of a drive signal with the phase of the resonant AC current. By detecting the phase of the resonant current instead of the resonant voltage, it eliminates the need for the costly components required to detect the resonant voltage. The system includes a main power supply for supplying a DC power signal and an inverter that converts the DC power signal to a resonating AC current signal responsive to a drive signal from a drive stage. An input current controller receives a first sense signal that indicates the power consumed by the main power supply and generates a first control signal that regulates the power consumed by the load.