Patents by Inventor Jin-Hyung Park

Jin-Hyung Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180044476
    Abstract: Provided are a polyamic acid resin, a polyamideimide film, and a method for preparing the same. More specifically, provided are a polyamic acid resin derived from a combination of specific components, and a polyamideimide film capable of implementing high modulus and excellent optical properties.
    Type: Application
    Filed: August 4, 2017
    Publication date: February 15, 2018
    Inventors: Sang Yoon PARK, Hyeon Jeong KIM, Tae Sug JANG, Jin Hyung PARK
  • Publication number: 20180044475
    Abstract: Provided are a polyamic acid resin, a polyamideimide film, and a method for preparing the same. More specifically, provided are a polyamic acid resin derived from a combination of specific components, a polyamideimide film capable of implementing high modulus and excellent optical properties while implementing excellent mechanical properties, heat properties, and electrical properties, and a method for preparing the same.
    Type: Application
    Filed: August 4, 2017
    Publication date: February 15, 2018
    Inventors: Sang Yoon PARK, Hyeon Jeong KIM, Tae Sug JANG, Jin Hyung PARK
  • Patent number: 9834705
    Abstract: Provided are a slurry for polishing tungsten and a method of polishing a substrate. The slurry according to an exemplary embodiment includes an abrasive configured to perform polishing and include particles having a positive zeta potential, a dispersant configure to disperse the abrasive, an oxidizer configured to oxidize a surface of the tungsten, a catalyst configured to promote oxidation of the tungsten, and a selectivity control agent configured to control a polishing selectivity and include an organic acid containing a carboxyl group. According to the slurry of the exemplary embodiment, a polishing selectivity between the tungsten and the insulation layer may be improved by suppressing a polishing rate of the insulation layer.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: December 5, 2017
    Assignee: UBMATERIALS INC.
    Inventor: Jin Hyung Park
  • Publication number: 20170335063
    Abstract: Provided are a polyamic acid composition, a polyamideimide film thereof, and a method for preparing the polyamideimide film. More specifically, provided are a polyamideimide film capable of implementing excellent optical properties in addition to inherent physical properties of polyimide by using a polyamic acid composition including a combination of specific components, and a method for preparing the polyamideimide film.
    Type: Application
    Filed: May 11, 2017
    Publication date: November 23, 2017
    Inventors: Sang Yoon Park, Hyeon Jeong Kim, Jin Hyung Park, Tae Sug Jang
  • Publication number: 20170332861
    Abstract: A cleaning device includes an inhalation unit to generate inhalation force to inhale air into a main body, the inhalation unit comprising: an impeller that is rotatable; an impeller cover having an inlet damper formed therein; and a return channel that is coupled to the impeller cover so that the impeller is capable of being accommodated in the return channel and that is directly coupled to the impeller so that air passing through the impeller is capable of being introduced into the return channel, the return channel comprising: an inner frame; and an outer frame at an outer side of the inner frame so as to be spaced apart from the inner frame.
    Type: Application
    Filed: August 7, 2017
    Publication date: November 23, 2017
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun KIM, Sang Won LEE, Dong Suk KO, Jin Hyung PARK, Eung Ryeol SEO, Hyeon Joon OH, Joo Yong LEE, Jae Ho CHOI, Kwang Su HEO
  • Patent number: 9790401
    Abstract: The present disclosure relates to abrasive particles, a polishing slurry and a fabricating method of the abrasive particles. The fabricating method of abrasive particles in accordance with an exemplary embodiment of the present disclosure includes preparing a precursor solution in which a first precursor is mixed with a second precursor that is different from the first precursor, preparing a basic solution, mixing the basic solution with the precursor solution and forming a precipitate, and washing abrasive particles synthesized by precipitation.
    Type: Grant
    Filed: April 8, 2016
    Date of Patent: October 17, 2017
    Assignee: UBMATERIALS INC.
    Inventor: Jin Hyung Park
  • Patent number: 9757000
    Abstract: A cleaning device includes an improved structure in which cleaning performance can be improved. The cleaning device includes an inhalation unit to generate inhalation force to inhale air into a main body, wherein the inhalation unit includes: an impeller that is rotatable; an impeller cover having an inlet damper formed therein; and a return channel coupled to the impeller cover so that the impeller can be accommodated in the return channel, wherein the return channel includes: an inner frame; and an outer frame placed at an outer side of the inner frame so as to be spaced apart from the inner frame, and a plurality of wings are disposed between the inner frame and the outer frame.
    Type: Grant
    Filed: October 27, 2014
    Date of Patent: September 12, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun Joo Kim, Sang Won Lee, Dong Suk Ko, Jin Hyung Park, Eung Ryeol Seo, Hyeon Joon Oh, Joo Yong Lee, Jae Ho Choi, Kwang Su Heo
  • Patent number: 9758698
    Abstract: Provided are slurry for polishing cobalt and a substrate polishing method. The slurry includes an abrasive configured to perform the polishing, the abrasive comprising zirconium oxide particles, a dispersing agent configured to disperse the abrasive, and a polishing accelerator configured to accelerate the polishing. The polishing accelerator includes an organic acid containing an amine group and a carboxylic group. According to the slurry in accordance with an exemplary embodiment, a polishing rate of the cobalt may increases without using an oxidizing agent, and local corrosion defects on a surface of the cobalt may be suppressed.
    Type: Grant
    Filed: March 17, 2016
    Date of Patent: September 12, 2017
    Assignee: UBMATERIALS INC.
    Inventor: Jin Hyung Park
  • Publication number: 20170145259
    Abstract: A polishing slurry for silicon, a method of polishing polysilicon, and a method of manufacturing a thin film transistor substrate, the slurry including a polishing particle; a dispersing agent including an anionic polymer, a hydroxyl acid, or an amino acid; a stabilizing agent including an organic acid, the organic acid including a carboxyl group; a hydrophilic agent including a hydrophilic group and a hydrophobic group, and water, wherein the polishing particle is included in the polishing slurry in an amount of about 0.1% by weight to about 10% by weight, based on a total weight of the slurry, a weight ratio of the polishing particle and the dispersing agent is about 1:0.01 to about 1:0.2, a weight ratio of the polishing particle and the stabilizing agent is about 1:0.001 to about 1:0.1, and a weight ratio of the polishing particle and the hydrophilic agent is about 1:0.01 to about 1:3.
    Type: Application
    Filed: November 18, 2016
    Publication date: May 25, 2017
    Inventors: Byoung-Kwon CHOO, Jin-Hyung PARK, Jeong-Kyun NA, Joon-Hwa BAE, Byoung-Ho CHEONG, Joo-Woan CHO, In-Sun HWANG
  • Patent number: 9562287
    Abstract: Provided is a method for producing a high-quality boron nitride film grown by using a borazine oligomer as a precursor through a metal catalyst effect. The method solves the problems, such as control of a gaseous precursor and vapor pressure control, occurring in CVD (Chemical vapor deposition) according to the related art, and a high-quality hexagonal boron nitride film is obtained through a simple process at low cost. In addition, the hexagonal boron nitride film may be coated onto various structures and materials. Further, selective coating is allowed so as to carry out coating in a predetermined area and scale-up is also allowed. Therefore, the method may be useful for coating applications of composite materials and various materials.
    Type: Grant
    Filed: November 18, 2013
    Date of Patent: February 7, 2017
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Myung Jong Kim, Sungchan Park, Hyunjin Cho, Sukang Bae, Jin-Hyung Park, Jung Ho Kang, Sang Ook Kang, Changhyup Lee
  • Publication number: 20170002233
    Abstract: The present disclosure relates to abrasive particles, a polishing slurry and a fabricating method of the abrasive particles. The fabricating method of abrasive particles in accordance with an exemplary embodiment of the present disclosure includes preparing a precursor solution in which a first precursor is mixed with a second precursor that is different from the first precursor, preparing a basic solution, mixing the basic solution with the precursor solution and_forming a precipitate, and washing abrasive particles synthesized by precipitation.
    Type: Application
    Filed: April 8, 2016
    Publication date: January 5, 2017
    Inventor: Jin Hyung PARK
  • Publication number: 20160300795
    Abstract: Semiconductor devices including empty spaces and methods of forming the semiconductor devices are provided. The semiconductor devices may include first and second line structures extending in a direction on a substrate, an insulating isolation pattern between the first and second line structures and a conductive structure between the first and second line structures and next to the insulating isolation pattern along the direction. The semiconductor devices may also include an empty space including a first portion between the first line structure and the conductive structure and a second portion between the first line structure and the insulating isolation pattern. The first portion of the empty space may have a height different from a height of the second portion of the empty space.
    Type: Application
    Filed: June 17, 2016
    Publication date: October 13, 2016
    Inventors: Hong-Rae Kim, BYOUNG-DEOG CHOI, HEE-YOUNG PARK, SANG-HO ROH, JIN-HYUNG PARK, KYUNG-MUN BYUN
  • Publication number: 20160272847
    Abstract: Provided are slurry for polishing cobalt and a substrate polishing method. The slurry includes an abrasive configured to perform the polishing, the abrasive comprising zirconium oxide particles, a dispersing agent configured to disperse the abrasive, and a polishing accelerator configured to accelerate the polishing. The polishing accelerator includes an organic acid containing an amine group and a carboxylic group. According to the slurry in accordance with an exemplary embodiment, a polishing rate of the cobalt may increases without using an oxidizing agent, and local corrosion defects on a surface of the cobalt may be suppressed.
    Type: Application
    Filed: March 17, 2016
    Publication date: September 22, 2016
    Inventor: Jin Hyung PARK
  • Publication number: 20160251547
    Abstract: Provided are a slurry for polishing tungsten and a method of polishing a substrate. The slurry according to an exemplary embodiment includes an abrasive configured to perform polishing and include particles having a positive zeta potential, a dispersant configure to disperse the abrasive, an oxidizer configured to oxidize a surface of the tungsten, a catalyst configured to promote oxidation of the tungsten, and a selectivity control agent configured to control a polishing selectivity and include an organic acid containing a carboxyl group. According to the slurry of the exemplary embodiment, a polishing selectivity between the tungsten and the insulation layer may be improved by suppressing a polishing rate of the insulation layer.
    Type: Application
    Filed: February 18, 2016
    Publication date: September 1, 2016
    Inventor: Jin Hyung PARK
  • Patent number: 9391138
    Abstract: Semiconductor devices including empty spaces and methods of forming the semiconductor devices are provided. The semiconductor devices may include first and second line structures extending in a direction on a substrate, an insulating isolation pattern between the first and second line structures and a conductive structure between the first and second line structures and next to the insulating isolation pattern along the direction. The semiconductor devices may also include an empty space including a first portion between the first line structure and the conductive structure and a second portion between the first line structure and the insulating isolation pattern. The first portion of the empty space may have a height different from a height of the second portion of the empty space.
    Type: Grant
    Filed: May 9, 2014
    Date of Patent: July 12, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-Rae Kim, Byoung-Deog Choi, Hee-Young Park, Sang-Ho Roh, Jin-Hyung Park, Kyung-Mun Byun
  • Patent number: 9287132
    Abstract: Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent.
    Type: Grant
    Filed: March 5, 2015
    Date of Patent: March 15, 2016
    Assignee: Industry-University Cooperation Foundation Hanyang University
    Inventors: Jea-Gun Park, Un-Gyu Paik, Jin-Hyung Park, Hao Cui, Jong-Young Cho, Hee-Sub Hwang, Jae-Hyung Lim, Ye-Hwan Kim
  • Publication number: 20150337173
    Abstract: The present invention relates to slurry for polishing crystalline phase-change materials and to a method for producing a phase-change device using the same. The slurry for polishing crystalline phase-change materials according to one embodiment of the present invention comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water. In addition, the method for producing a phase-change device according to one embodiment of the present invention comprises the following steps: preparing a substrate; forming a crystalline phase-change material film on the substrate; and removing the phase-change material film through a chemical-mechanical polishing process using slurry for polishing phase-change materials, which comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water.
    Type: Application
    Filed: August 4, 2015
    Publication date: November 26, 2015
    Inventors: Jea Gun PARK, Un Gyu PARK, Jin Hyung PARK, Hao CUI, Jong Young CHO, Hee Sub HWANG, Jae Hyung LIM, Ye Hwan KIM
  • Patent number: 9163314
    Abstract: The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: October 20, 2015
    Assignee: INDUSTRIAL BANK OF KOREA
    Inventors: Jea-Gun Park, Jin-Hyung Park, Jae-Hyung Lim, Jong-Young Cho, Ho Choi, Hee-Sub Hwang
  • Publication number: 20150173577
    Abstract: A cleaning device includes an improved structure in which cleaning performance can be improved. The cleaning device includes an inhalation unit to generate inhalation force to inhale air into a main body, wherein the inhalation unit includes: an impeller that is rotatable; an impeller cover having an inlet damper formed therein; and a return channel coupled to the impeller cover so that the impeller can be accommodated in the return channel, wherein the return channel includes: an inner frame; and an outer frame placed at an outer side of the inner frame so as to be spaced apart from the inner frame, and a plurality of wings are disposed between the inner frame and the outer frame.
    Type: Application
    Filed: October 27, 2014
    Publication date: June 25, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun Joo Kim, Sang Won Lee, Dong Suk Ko, Jin Hyung Park, Eung Ryeol Seo, Hyeon Joon Oh, Joo Yong Lee, Jae Ho Choi, Kwang Su Heo
  • Publication number: 20150179470
    Abstract: Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent.
    Type: Application
    Filed: March 5, 2015
    Publication date: June 25, 2015
    Inventors: Jea-Gun Park, Un-Gyu Paik, Jin-Hyung Park, Hao Cui, Jong-Young Cho, Hee-Sub Hwang, Jae-Hyung Lim, Ye-Hwan Kim