Abstract: A packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity comprises a metal base, an array chip and a plurality of metal wires. The metal base is of highly heat conductive copper or aluminum, and a first electrode area and at least one second electrode area which are electrically isolated are disposed on the metal base. The array chip is disposed on the first electrode area, on which multiple matrix-arranged semiconductor light-emitting elements and at least one wire bond pad adjacent to the light-emitting elements are disposed. The light-emitting element is a VCSEL element, an HCSEL element or an RCLED element. The metal wires are connected between the wire bond pad and the second electrode area to transmit power signals. Between the bottom surface and the first electrode area is disposed a conductive adhesive to bond and facilitate electrical connection between the two.

Abstract: The present invention discloses a method for fabricating a heat-resistant, humidity-resistant oxide-confined vertical-cavity surface-emitting laser (VCSEL) by slowing down the oxidizing rate during a VCSEL oxidation process to thereby reduce stress concentration of an oxidation layer and by preventing moisture invasion using a passivation layer disposed on a laser window. The VCSEL device thus fabricated is heat-resistant, humidity-resistant, and highly reliable. In a preferred embodiment, the oxidation process takes place at an oxidizing rate of less than 0.4 ?m/min, and the passivation layer is a SiON passivation layer.

Abstract: A dual wavelength laser device including a cap, a header, a first laser chip and a second laser chip. The cap includes a cap body and a lens embedded on the cap body. The header forms an accommodating space with the cap. The first laser chip is arranged in the accommodating space and emitting a first laser beam toward the lens. The second laser chip is arranged in the accommodating space and emitting a second laser beam toward the lens.

Abstract: A triple wavelength bidirectional optical communication system includes an optical fiber, a transmitter optical subassembly and a receiver optical subassembly. The transmitter optical subassembly includes a first filter, a dual wavelength laser device and a first detector device. The dual wavelength laser device emits a first and a second laser beam to the optical fiber. The first detector device receives a third laser beam emitted from the optical fiber and propagated via the first filter. The receiver optical subassembly includes a second filter, a transceiver device and a second detector device. The transceiver device emits the third laser beam propagated via the second filter and reached to the optical fiber and also receives the first laser beam emitted from the optical fiber and propagated via the second filter. The second detector device receives the second laser beam emitted from the second facet and propagated via the second filter.

Abstract: A bi-directional optical device includes: a TO cap; a TO header defining a receiving space together with the TO cap; a laser chip provided on the TO header and in the receiving space; and a light-receiving chip provided on the TO header and in the receiving space. The TO cap has a cap body and a lens embeddedly mounted on the cap body. The laser chip emits a first laser beam toward the lens. The light-receiving chip faces the lens and receives a second laser beam transmitted through the lens. The laser chip and the light-receiving chip are packaged together within the receiving space defined by the TO cap and the TO header, so as to effectuate a bi-directional optical device for emitting and receiving light of different wavelengths.

Abstract: A method for producing an oxide confined semiconductor laser uses a dual platform to synchronously produce a light emitting active area and a wire bonding area on a semiconductor material and use a metal protective material, an electrically conductive metal material, and a dielectric material together with an etching process, an oxide confined technology, and plating technology to produce the dual platform, an oxide layer, a dielectric layer, a protective layer, and a metal layer. The light emitting active area platform and the wire bonding area platform are independent, and the wire bonding area platform is produced on the semiconductor structure, such that an ion implant process can adjust the capacitance and provide a higher wire bonding strength. Since the electric layer is filled on the external sides of the dual platforms, the wire connected metal capacitance is lowered, and the planarization facilitates the production of the metal layer.

Abstract: A method for producing an oxide confined semiconductor laser uses a dual platform to synchronously produce a light emitting active area and a wire bonding area on a semiconductor material and use a metal protective material, an electrically conductive metal material, and a dielectric material together with an etching process, an oxide confined technology, and plating technology to produce the dual platform, an oxide layer, a dielectric layer, a protective layer, and a metal layer. The light emitting active area platform and the wire bonding area platform are independent, and the wire bonding area platform is produced on the semiconductor structure, such that an ion implant process can adjust the capacitance and provide a higher wire bonding strength. Since the electric layer is filled on the external sides of the dual platforms, the wire connected metal capacitance is lowered, and the planarization facilitates the production of the metal layer.

Abstract: A dual platform semiconductor laser device includes a laser chip layer, two independent platforms formed on the laser chip layer and defining a light emitting active area platform and a wire bonding platform, a planarized dielectric layer filled between the independent platforms, a protective layer disposed at the dielectric layer and including a contact area hole corresponding to the first independent platform, coated onto the metal layer at the protective layer and coupled to the first independent platform, and extended to the second independent platform to form a pad for wire bonding the first independent platform. The independent platforms define the second independent platform for wire bonding, and its capacitance is modulated to provide a stronger wire bonding strength, and the dielectric layer filled at the external sides of the two platforms lowers the wire connected metal capacitance and obtain a planarized surface for producing the metal layer easily.