Abstract: A method for forming a semiconductor die, includes forming an interlayer dielectric layer on a substrate having a semiconductor die region, a seal-ring region, and a scribe line region, forming a metal pad and a test pad on the interlayer dielectric layer, forming a passivation dielectric layer on the interlayer dielectric layer, the metal pad, and the test pad, first etching the passivation dielectric layer and the interlayer dielectric layer existing between the seal-ring region and the scribe line region to a predetermined depth using a plasma etching process, second etching the passivation dielectric layer to expose the metal pad and the test pad, forming a bump on the metal pad, and dicing the substrate while removing the scribe line region by mechanical sawing.

Abstract: A display device includes a light emitting diode electrically connected between a driving voltage line and a common voltage line; a driving transistor electrically connected between the driving voltage line and the light emitting diode; a second transistor electrically connected between a first electrode of the driving transistor electrically connected to the driving voltage line and a data line; a first scan line electrically connected to a gate electrode of the second transistor; a third transistor electrically connected between a second electrode of the driving transistor electrically connected to the light emitting diode and a gate electrode of the driving transistor; and a connection electrode that connects the gate electrode of the driving transistor and the third transistor, wherein at least a part of a contact portion where the connection electrode contacts the third transistor does not overlap the first scan line.

Abstract: A display apparatus including a display and a supporter. The supporter being mounted on the display and configured to support the display and rotate the display module between a first position and a second position. The supporter including a drive motor, a first gear, and a detection sensor. The drive motor configured to supply a driving force to rotate the display. The first gear configured to rotate together with the display by receiving the driving force from the drive motor. The detection sensor configured to detect a rotation amount of a second gear configured to rotate in with the first gear.

Abstract: A display device includes a light emitting diode electrically connected between a driving voltage line and a common voltage line; a driving transistor electrically connected between the driving voltage line and the light emitting diode; a second transistor electrically connected between a first electrode of the driving transistor electrically connected to the driving voltage line and a data line; a first scan line electrically connected to a gate electrode of the second transistor; a third transistor electrically connected between a second electrode of the driving transistor electrically connected to the light emitting diode and a gate electrode of the driving transistor; and a connection electrode that connects the gate electrode of the driving transistor and the third transistor, wherein at least a part of a contact portion where the connection electrode contacts the third transistor does not overlap the first scan line.

Abstract: A display device includes a substrate, a transistor on the substrate, a pixel electrode connected to the transistor, a bank layer disposed on the pixel electrode and defining a pixel opening overlapping the pixel electrode, an emission layer in the pixel opening, a common electrode on the emission layer and the bank layer, an encapsulation layer on the common electrode, a sensing electrode on the encapsulation layer, a first insulating layer disposed on the encapsulation layer and overlapping the pixel opening, a second insulating layer on the first insulating layer, and a third insulating layer surrounding the first insulating layer. A refractive index of the first insulating layer, a refractive index of the second insulating layer, and a refractive index of the third insulating layer are different from one another, and the refractive index of the first insulating layer is greater than the refractive index of the third insulating layer.

Abstract: The present invention relates to a polysiloxane-polycarbonate copolymer using a hydroxyl terminated polysiloxane mixture, and a method for producing same, and more specifically, to: a polysiloxane-polycarbonate copolymer which includes hydroxy-terminated polysiloxanes of chemical formulae 1 and 2 in a specific weight ratio as repeating units, and thus exhibits excellent transmittance and low-temperature impact strength compared to the case of using either of the hydroxy-terminated polysiloxanes by itself, and in which the overall production yield of the raw material polysiloxane is improved, such that the polysiloxane-polycarbonate copolymer is excellent in terms of economics; and a method for producing same.

Abstract: Polycarbonate block copolymers are provided, which have: (A) a polyester block of chemical formula 1; and (B) a polycarbonate block derived from a dihydric phenol of chemical formula 3 compound and phosgene. The copolymers may be prepared by (1) polymerizing ester oligomers to form a compound of chemical formula 1; and (2) copolymerizing the ester oligomer obtained in (1) with a polycarbonate oligomer prepared from a dihydric phenol compound of chemical formula 3 and phosgene, in the presence of a polymerization catalyst. The block copolymer may have a viscosity average molecular weight (Mv) of 10,000 to 200,000.

Abstract: Polycarbonate block copolymers are provided, which have: (A) a polyester block of chemical formula 1; and (B) a polycarbonate block derived from a dihydric phenol of chemical formula 3 compound and phosgene. The copolymers may be prepared by (1) polymerizing ester oligomers to form a compound of chemical formula 1; and (2) copolymerizing the ester oligomer obtained in (1) with a polycarbonate oligomer prepared from a dihydric phenol compound of chemical formula 3 and phosgene, in the presence of a polymerization catalyst. The block copolymer may have a viscosity average molecular weight (Mv) of 10,000 to 200,000.

Abstract: Disclosed is a polycarbonate resin composition including (1) a polyester compound having a structure of chemical formula 1 as defined herein or a phenyl-arylene ether sulfone compound having a structure of chemical formula 2 as defined herein; (2) a polycarbonate block copolymer; and (3) a thermoplastic aromatic polycarbonate resin or a polysiloxane-polycarbonate resin; and a molded product including the same. The polycarbonate resin composition exhibits remarkably excellent heat resistance compared to existing high heat resistance polycarbonate resins, and has an excellent balance of physical properties such as fluidity.

Abstract: The present invention relates to a thermoplastic copolymer resin having excellent heat resistance and transparency and a process for producing the same. More specifically, the present invention relates to a thermoplastic copolymer resin which is obtained by copolymerizing an ester oligomer having a specific structure with a polycarbonate oligomer, exhibits remarkably excellent heat resistance, and has excellent physical property balance such as transparency, impact strength, fluidity, etc.; a method for producing the same; and a molded article comprising the same.

Abstract: The present invention relates to a polycarbonate resin composition having excellent heat resistance and fluidity, and a molded product including the same. More specifically, the present invention relates to a polycarbonate resin composition, and a molded product including the same, wherein the polycarbonate resin composition, by including a polycarbonate copolymer together with a compound having a specific structure and a specific resin, exhibits remarkably excellent heat resistance compared to existing high heat resistance polycarbonate resins, and has an excellent balance of physical properties such as fluidity.

Abstract: Provided is a gene amplifying and detecting device. The gene amplifying and detecting device includes: a gene amplifying chip including a chamber formed therein; a reaction solution filled in the chamber and including a fluorescent material; a light source located at one side of the gene amplifying chip; a light detector located at the other side of the gene amplifying chip; and a graphene heater formed on an inner surface or outer surface of the gene amplifying chip so as to heat the reaction solution.

Abstract: Disclosed is a photo detector. The photo detector includes: a conductive substrate; an insulating layer formed on the conductive substrate; a single-layer graphene formed at one part of an upper end of the insulating layer and formed in one layer; a multi-layer graphene formed at the other part of the upper end of the insulating layer and formed in multiple layers; a first electrode formed at an end of the single-layer graphene; and a second electrode formed at an end of the multi-layer graphene.

Abstract: Disclosed are a method of growing a high-quality single layer graphene by using a Cu/Ni multi-layer metallic catalyst, and a graphene device using the same. The method controls and grows a high-quality single layer graphene by using the Cu/Ni multilayer metallic catalyst, in which a thickness of a nickel lower layer is fixed and a thickness of a copper upper layer is changed in a case where a graphene is grown by a CVD method. According to the method, it is possible to obtain a high-quality single layer graphene, and improve performance of a graphene application device by utilizing the high-quality single layer graphene and thus highly contribute to industrialization of the graphene application device.

Abstract: Provided herein is a gas sensor that includes a substrate, an insulating layer provided on the substrate, a first active layer disposed on the insulating layer, a second active layer which is disposed on the insulating layer and undergoes heterojunction with a portion of the first active layer, a first electrode and a second electrode which are disposed on the first active layer and are spaced apart from each other at a predetermined interval, and a third electrode and a fourth electrode which are disposed on the second active layer and are spaced apart from each other at a predetermined interval. The first active layer and the second active layer include different materials.

Abstract: Disclosed is a photo detector. The photo detector includes: a conductive substrate; an insulating layer formed on the conductive substrate; a single-layer graphene formed at one part of an upper end of the insulating layer and formed in one layer; a multi-layer graphene formed at the other part of the upper end of the insulating layer and formed in multiple layers; a first electrode formed at an end of the single-layer graphene; and a second electrode formed at an end of the multi-layer graphene.

Abstract: Provided herein is a gas sensor apparatus including a first sensor unit, second sensor unit, and signal processing unit. The first sensor unit has a channel area doped to an n-type such that it may selectively react to a donor molecule in gas. The second sensor unit has a channel area doped to a p-type such that it may selectively react to an acceptor molecule in gas. The signal processing unit receives a sense signal of the donor molecule from the first sensor unit and a sense signal of the acceptor molecule from the second sensor unit, processes the received sense signals and generates result data of processing the received sense signals. Therefore, the gas sensor apparatus may selectively sense donor gas and acceptor gas.

Abstract: Provided is a gene amplifying and detecting device. The gene amplifying and detecting device includes: a gene amplifying chip including a chamber formed therein; a reaction solution filled in the chamber and including a fluorescent material; a light source located at one side of the gene amplifying chip; a light detector located at the other side of the gene amplifying chip; and a graphene heater formed on an inner surface or outer surface of the gene amplifying chip so as to heat the reaction solution.

Abstract: A method of manufacturing a junction electronic device having a 2-Dimensional (2D) material as a channel, includes forming a pattern portion by surface-treating a substrate so that the patterned portion has a higher surface potential than other portions of the substrate; bonding a 2D material to rthe patterned portion having the higher surface potential by spraying a liquid including 2D material flakes onto the substrate; forming a pair of first electrodes in contact with both ends of the 2D material disposed on the substrate; forming a dielectric layer on the first electrodes and the 2D material; and forming a second electrode on the dielectric layer. The 2D materials are disposed at desired positions by chemical exfoliation.

Abstract: Provided is a gas sensor including a substrate, a sensing electrode extended in a first direction on the substrate, and a plurality of heaters disposed in a second direction crossing the first direction on the substrate. The plurality of heaters is separated at both sides of the sensing electrode. The plurality of heaters includes graphene.