Patents by Inventor Jin-Su Han

Jin-Su Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220255179
    Abstract: A battery pack includes a cell group including a number of secondary battery cells; a frame accommodating the cell group therein; and a bracket coupled to the frame, linked to the cell group to fix the cell group to the frame, and defining a vent space together with the frame to form a path, through which flames or gas are discharged, when the flames or the gas is generated in one of the secondary battery cells.
    Type: Application
    Filed: February 7, 2022
    Publication date: August 11, 2022
    Inventors: Jae Il Hwang, Jin Su Han, Min Song Kang, Bon Seok Ku, Jun Hee Jung, Sei Hoon Cho
  • Publication number: 20220209332
    Abstract: The following disclosure relates to a battery pack case, and more particularly, to a battery pack case in which an internal space defined by a plate and an outer frame is partitioned into a plurality of module spaces so that a plurality of battery modules are individually seated and in which a plurality of channels are formed inside a left frame and a right frame of the outer frame and have a structure in which they are in communication with internal spaces of each of the plurality of partitioned module spaces to be able to discharge a harmful material generated at the time of occurrence of an issue in the battery module to the outside through the plurality of channels.
    Type: Application
    Filed: December 23, 2021
    Publication date: June 30, 2022
    Inventors: Jun Hee Jung, Jae Il Hwang, Min Song Kang, Bon Seok Ku, Sei Hoon Cho, Jin Su Han
  • Publication number: 20220102799
    Abstract: Disclosed is a miniaturized battery module in which a space except for a space of a battery cell is minimized and the number of components is reduced. The miniaturized battery module includes a cell assembly configured by assembling a plurality of battery cells, an upper frame inserted into an outer upper surface of the cell assembly, a lower frame inserted into an outer lower surface of the cell assembly and fastened to the upper frame, and first and second endplates fastened to two opposite ends of the cell assembly and configured to fix the plurality of battery cells. In this case, at least two or more of the plurality of the battery cells are arranged side by side, and the upper frame and the lower frame are fastened by welding.
    Type: Application
    Filed: September 23, 2021
    Publication date: March 31, 2022
    Inventors: Jae-Yeon Ryu, Gil-Sup Kim, Sung-Joo Kang, Jae-Nyeon Kim, Jin-Su Han, Jung-Hwan Kim
  • Publication number: 20220102804
    Abstract: The battery module includes: a battery cell stack in which a plurality of battery cells are stacked; a terminal block electrically connected to the battery cell stack; a housing accommodating the battery cell stack in a form of an opened side surface on which the terminal block is formed; an insulating cover covering an opening of the housing, a terminal block through hole exposing the terminal block to the outside being formed on one side of the insulating cover; and a terminal block protective cover accommodating the terminal block exposed to the outside. A portion of the terminal block protective cover being melted in a situation of a certain temperature or higher to cover and insulate an outer surface of the terminal block, thereby insulating the terminal block and preventing the short circuit in a thermal runaway situation.
    Type: Application
    Filed: September 27, 2021
    Publication date: March 31, 2022
    Inventors: Jun Hee Jung, Jin Su Han, Jae Il Hwang, Min Song Kang, Bon Seok Ku, Sei Hoon Cho
  • Patent number: 7880196
    Abstract: Embodiments relate to an image sensor and a method of forming an image sensor. According to embodiments, an image sensor may include a first substrate and a photodiode. A circuitry including a metal interconnection may be formed on and/or over the first substrate. The photodiode may be formed over a first substrate, and may contact the metal interconnection. The circuitry of the first substrate may include a first transistor, a second transistor, an electrical junction region, and a first conduction type region. The first and second transistors may be formed over the first substrate. According to embodiments, an electrical junction region may be formed between the first transistor and the second transistor. The first conduction type region may be formed at one side of the second transistor, and may be connected to the metal interconnection.
    Type: Grant
    Filed: December 28, 2008
    Date of Patent: February 1, 2011
    Assignee: Dongbu HiTek Co., Ltd.
    Inventors: Hee-Sung Shim, Seoung-Hyun Kim, Joon Hwang, Kwang-Soo Kim, Jin-Su Han
  • Publication number: 20090179293
    Abstract: Embodiments relate to an image sensor. According to embodiments, an image sensor may include a circuitry, a first substrate, a photodiode, a metal interconnection, and an electrical junction region. The circuitry and the metal interconnection may be formed on and/or over the first substrate. The photodiode may contact the metal interconnection and may be formed on and/or over the first substrate. The circuitry may include an electrical junction region on and/or over the first substrate and a first conduction type region on and/or over the electrical junction region and connected to the metal interconnection. According to embodiments, an image sensor and a manufacturing method thereof may provide a vertical integration of circuitry and a photodiode.
    Type: Application
    Filed: December 28, 2008
    Publication date: July 16, 2009
    Inventors: Hee-Sung Shim, Seoung-Hyun Kim, Joon Hwang, Kwang-Soo Kim, Jin-Su Han
  • Publication number: 20090166792
    Abstract: Embodiments relate to an image sensor and a method of forming an image sensor. According to embodiments, an image sensor may include a first substrate and a photodiode. A circuitry including a metal interconnection may be formed on and/or over the first substrate. The photodiode may be formed over a first substrate, and may contact the metal interconnection. The circuitry of the first substrate may include a first transistor, a second transistor, an electrical junction region, and a first conduction type region. The first and second transistors may be formed over the first substrate. According to embodiments, an electrical junction region may be formed between the first transistor and the second transistor. The first conduction type region may be formed at one side of the second transistor, and may be connected to the metal interconnection.
    Type: Application
    Filed: December 28, 2008
    Publication date: July 2, 2009
    Inventors: Hee-Sung Shim, Seoung-Hyun Kim, Joon Hwang, Kwang-Soo Kim, Jin-Su Han
  • Patent number: 6982186
    Abstract: A CMOS image sensor and a method for manufacturing the same, capable of preventing an interface between an active region and a field region in the CMOS image sensor from being damaged by ion implantation. The method comprises implanting dopant ions into a source region between a gate electrode of the reset transistor and the photodiode, using an ion implantation mask that covers predetermined locations of the field region and the source region.
    Type: Grant
    Filed: December 30, 2003
    Date of Patent: January 3, 2006
    Assignee: DongbuAnam Semiconductor Inc.
    Inventors: In Gyun Jeon, Kwang Soo Kim, Jin Su Han
  • Patent number: 6855595
    Abstract: An image sensor includes a plurality of unit pixels for sensing a light beam to generate an image data. Each of the unit pixels includes, a photoelectric element for sensing a light beam incident thereto and generating photoelectric charges, a transistor including a gate dielectric formed adjacent to the photoelectric element and a gate electrode formed on top of the gate dielectric and a capacitor structure including an insulating film formed on a portion of the photoelectric element and a bottom electrode, wherein the insulating film and the gate dielectric are made of a same material and the bottom electrode and the gate electrode are made of a same material.
    Type: Grant
    Filed: December 20, 2002
    Date of Patent: February 15, 2005
    Assignee: Hynix Semiconductor Inc.
    Inventors: Jin-Su Han, Hoon-Sang Oh
  • Publication number: 20030122169
    Abstract: An image sensor includes a plurality of unit pixels for sensing a light beam to generate an image data. Each of the unit pixels includes, a photoelectric element for sensing a light beam incident thereto and generating photoelectric charges, a transistor including a gate dielectric formed adjacent to the photoelectric element and a gate electrode formed on top of the gate dielectric and a capacitor structure including an insulating film formed on a portion of the photoelectric element and a bottom electrode, wherein the insulating film and the gate dielectric are made of a same material and the bottom electrode and the gate electrode are made of a same material.
    Type: Application
    Filed: December 20, 2002
    Publication date: July 3, 2003
    Inventors: Jin-Su Han, Hoon-Sang Oh
  • Patent number: 6545302
    Abstract: An image sensor capable of preventing the degradation of pinned photodiodes and the generation of leakage current between neighboring pinned photodiodes is provided. The disclosed image sensor contains a plurality of pixel units, each pixel unit having a photodiode region. The image sensor includes a semiconductor substrate of a first conductivity type; a device isolation layer formed in the semiconductor substrate; a field stop layer formed beneath the device isolation layer; a trench formed in the semiconductor substrate, wherein the trench surrounds the photodiode region; a first doping region of the first conductivity type formed beneath the surface of the semiconductor substrate and beneath the surfaces of the trench; an insulating member filling the trench; and a second doping region of a second conductivity type formed in the semiconductor substrate under the first doping region.
    Type: Grant
    Filed: March 19, 2001
    Date of Patent: April 8, 2003
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Jin-Su Han
  • Patent number: 6521924
    Abstract: An image sensor includes a plurality of unit pixels for sensing a light beam to generate an image data. Each of the unit pixels includes, a photoelectric element for sensing a light beam incident thereto and generating photoelectric charges, a transistor including a gate dielectric formed adjacent to the photoelectric element and a gate electrode formed on top of the gate dielectric and a capacitor structure including an insulating film formed on a portion of the photoelectric element and a bottom electrode, wherein the insulating film and the gate dielectric are made of a same material and the bottom electrode and the gate electrode are made of a same material.
    Type: Grant
    Filed: December 19, 2000
    Date of Patent: February 18, 2003
    Assignee: Hynix Semiconductor Inc.
    Inventors: Jin-Su Han, Hoon-Sang Oh
  • Patent number: 6441412
    Abstract: A unit pixel in a CMOS image sensor, which enhances a capacitance of a photodiode to reduce noises and increase the maximum output signal of the image sensor, is provided. To achieve this, the CMOS image sensor includes a photodiode aligned with an edge of an insulating film for separating elements and formed by doping impurities to a semiconductor layer by an ion implantation; and a capacitor formed along with interface between the photodiode and the insulating film on plan and formed by layering a bottom electrode, a dielectric and an upper electrode contacted with the photodiode.
    Type: Grant
    Filed: December 19, 2000
    Date of Patent: August 27, 2002
    Assignee: Hynix Semiconductor Inc.
    Inventors: Hoon-Sang Oh, Jin-Su Han
  • Publication number: 20020024067
    Abstract: An image sensor capable of preventing the degradation of pinned photodiodes and the generation of leakage current between neighboring pinned photodiodes is provided. The disclosed image sensor contains a plurality of pixel units, each pixel unit having a photodiode region. The image sensor includes a semiconductor substrate of a first conductivity type; a device isolation layer formed in the semiconductor substrate; a field stop layer formed beneath the device isolation layer; a trench formed in the semiconductor substrate, wherein the trench surrounds the photodiode region; a first doping region of the first conductivity type formed beneath the surface of the semiconductor substrate and beneath the surfaces of the trench; an insulating member filling the trench; and a second doping region of a second conductivity type formed in the semiconductor substrate under the first doping region.
    Type: Application
    Filed: March 19, 2001
    Publication date: February 28, 2002
    Inventor: Jin-Su Han
  • Publication number: 20010006238
    Abstract: An image sensor includes a plurality of unit pixels for sensing a light beam to generate an image data. Each of the unit pixels includes, a photoelectric element for sensing a light beam incident thereto and generating photoelectric charges, a transistor including a gate dielectric formed adjacent to the photoelectric element and a gate electrode formed on top of the gate dielectric and a capacitor structure including an insulating film formed on a portion of the photoelectric element and a bottom electrode, wherein the insulating film and the gate dielectric are made of a same material and the bottom electrode and the gate electrode are made of a same material.
    Type: Application
    Filed: December 19, 2000
    Publication date: July 5, 2001
    Inventors: Jin-Su Han, Hoon-Sang Oh
  • Publication number: 20010005018
    Abstract: A unit pixel in a CMOS image sensor, which enhances a capacitance of a photodiode to reduce noises and increase the maximum output signal of the image sensor, is provided. To achieve this, the CMOS image sensor includes a photodiode aligned with an edge of an insulating film for separating elements and formed by doping impurities to a semiconductor layer by an ion implantation; and a capacitor formed along with interface between the photodiode and the insulating film on plan and formed by layering a bottom electrode, a dielectric and an upper electrode contacted with the photodiode.
    Type: Application
    Filed: December 19, 2000
    Publication date: June 28, 2001
    Inventors: Hoon-Sang Oh, Jin-Su Han
  • Patent number: 5900349
    Abstract: There is disclosed a method for forming fine patterns in a semiconductor device, comprising the steps of: providing a silicon substrate; coating a pattern material on the surface of the silicon substrate to form a layout of pattern; additionally arranging a plurality of dummy patterns, each having a smaller size than the minimum size at which patterning is not permitting, on the surface of the silicon substrate including the area of said layout; preparing a reticle by use of the layout where said fine dummy patterns are arranged; and exposing the layout on the silicon substrate through said reticle to light, which enables the patterns to have as accurate a width as desired, irrespective of the pattern density, whereby the production yield of the semiconductor device can be greatly improved.
    Type: Grant
    Filed: June 20, 1996
    Date of Patent: May 4, 1999
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Jin Su Han
  • Patent number: 5759723
    Abstract: A light exposure mask which is used in the formation of a micro pattern, including a transparent substrate, a chromium pattern formed on the transparent substrate, and assistant patterns formed on portions of the chromium pattern where a rounding effect is generated. By virtue of the assistant patterns, it is possible to prevent the phenomenon that the pattern is reduced in size due to the rounding effect. Accordingly, it is possible to accurately form a pattern having a desirable size. Each assistant pattern has a bar, inverted-triangular or inverted-U shape.
    Type: Grant
    Filed: June 27, 1996
    Date of Patent: June 2, 1998
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Jin Su Han