Abstract: A resistance variable memory device may include a plurality of memory cells and a control circuit block. The memory cells may be connected between a global word line and a global bit line. The control circuit block may control the memory cells. The control circuit block may include a write pulse control block. The write pulse control block may include a high resistance path circuit and a bypass circuit connected between the global word line and a selected memory cell. The write pulse control block may selectively enable any one of the high resistance path circuit and the bypass circuit in accordance with a position the selected memory cell.

Abstract: A method and apparatus use a geometric modified image for video encoding/decoding. The encoding method may include: generating a geometric modified reference picture by geometrically modifying a reference picture; generating a prediction block of a current block within an encoding target picture by performing inter prediction by referencing the reference picture or the geometrically modified reference picture; and encoding inter-prediction information of the current block.

Abstract: A plastic filler neck for vehicles includes a fuel injection pipe, a retainer inserted and fastened into an internal space of a tip of the fuel injection pipe to support a refueling gun, a cap holder directly fastened to the tip of the fuel injection pipe by fusion, and an air drain casing mounted, by a mounting bracket, to an outer diameter portion of the cap holder fastened to the fuel injection pipe.

Abstract: A display device including: a panel unit including N data lines; and a data line driver unit including N channels, wherein the data line driver unit includes a channel amplifier unit, and a short detection device for detecting whether or not a short has occurred between two data lines among the N data lines, wherein N is an integer of 2 or more.

Abstract: The present invention relates to an image encoding and decoding technique, and more particularly, to an image encoder and decoder using unidirectional prediction. The image encoder includes a dividing unit to divide a macro block into a plurality of sub-blocks, a unidirectional application determining unit to determine whether an identical prediction mode is applied to each of the plurality of sub-blocks, and a prediction mode determining unit to determine a prediction mode with respect to each of the plurality of sub-blocks based on a determined result of the unidirectional application determining unit.

Abstract: A method of manufacturing a semiconductor device includes forming a three-dimensional (3D) structure on a substrate, forming an adsorption control layer to cover an upper portion of the 3D structure, and forming a material layer on the adsorption control layer and on a lower portion of the 3D structure that is not covered by the adsorption control layer, wherein a minimum thickness of the material layer on the adsorption control layer is less than a maximum thickness of the material layer on the lower portion of the 3D structure.

Abstract: A passive compliance gripper includes a passive compliance part, a displacement measuring element and a gripper mount. A first end of the passive compliance part is fixed, and a second end of the passive compliance part is configured to be transformed. The displacement measuring element is equipped to the passive compliance part, and measures displacement due to transformation of the passive compliance part. The gripper mount is connected to the second end of the passive compliance part, and has a gripper part gripping a component.

Abstract: The present invention relates to a window cover film and a flexible display panel including the same. More particularly, the present invention relates to a window cover film including a base layer and a hard coating layer, and a flexible display panel including the same. Since the window cover film of the present invention has high surface hardness, flexibility, the excellent bending properties, the window cover film may be restored to the original form without permanent deformation and/or damage of the hard coating layer and the window cover film even though a predetermined deformation is repeated.

Abstract: The present invention relates to a caliper cover, and more particularly, to a caliper cover that protects a brake caliper and is firmly fixed to the brake caliper.

Abstract: A semiconductor memory apparatus includes an access line control circuit. The access line control circuit applies a selected bias voltage to a selected access line coupled with a target memory cell and applies a first unselected bias voltage to an unselected access line adjacent to the selected access line. A second unselected bias voltage is applied to an unselected access line not adjacent to the selected access line.

Abstract: A non-volatile memory apparatus includes a memory cell coupled between a global bit line and a global word line. A bit line control circuit configured to apply a bit line read bias voltage to the global bit line based on a read signal. A snap-back detection circuit coupled to the global word line, and configured to generate a data output signal and a current enable signal by detecting a snap-back of the memory cell. A word line control circuit configured to apply a word line read bias voltage to the global word line based on the read signal, and may increase an amount of a current flowing through the memory cell based on the current enable signal.

Abstract: A semiconductor memory apparatus includes an access line control circuit. The access line control circuit applies a selected bias voltage to a selected access line coupled with a target memory cell and applies a first unselected bias voltage to an unselected access line adjacent to the selected access line. A second unselected bias voltage is applied to an unselected access line not adjacent to the selected access line.

Abstract: Provided are a polyimide-based film having excellent visibility, a film for a cover window, and a display device including the same.

Abstract: Provided is a plasma etching method comprising supplying heptafluoropropyl methyl ether (HFE) gas, argon (Ar) gas and oxygen (O2) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.

Abstract: A non-volatile memory apparatus includes a memory cell coupled between a global bit line and a global word line. A bit line control circuit configured to apply a bit line read bias voltage to the global bit line based on a read signal. A snap-back detection circuit coupled to the global word line, and configured to generate a data output signal and a current enable signal by detecting a snap-back of the memory cell. A word line control circuit configured to apply a word line read bias voltage to the global word line based on the read signal, and may increase an amount of a current flowing through the memory cell based on the current enable signal.

Abstract: A display apparatus including a plurality of displays arranged adjacent to each other, and a connector coupled to adjacent ends of the plurality of displays to couple the plurality of displays to each other, wherein the connector electrically connects the plurality of displays.

Abstract: A semiconductor memory apparatus includes an access line control circuit. The access line control circuit applies a selected bias voltage to a selected access line coupled with a target memory cell and applies a first unselected bias voltage to an unselected access line adjacent to the selected access line. A second unselected bias voltage is applied to an unselected access line not adjacent to the selected access line.

Abstract: A semiconductor system may include a memory controller and a non-volatile memory apparatus. The memory controller may generate a recovery command signal by measuring a power off time of the non-volatile memory apparatus. The non-volatile memory apparatus may perform a drift recovery operation based on the recovery command signal.

Abstract: A resistance variable memory device may include a plurality of memory cells and a control circuit block. The memory cells may be connected between a global word line and a global bit line. The control circuit block may control the memory cells. The control circuit block may include a write pulse control block. The write pulse control block may include a high resistance path circuit and a bypass circuit connected between the global word line and a selected memory cell. The write pulse control block may selectively enable any one of the high resistance path circuit and the bypass circuit in accordance with a position the selected memory cell.

Abstract: Provided is a hard coating film. The hard coating film includes a base layer and a hard coating layer disposed on the base layer and having a pencil hardness of 4H or higher. A surface elongation at break of the hard coating film falls within a predetermined range, as measured by a certain method. The hard coating film shows excellent durability under high-temperature/high-humidity conditions, has no microcracks formed after repeated folding, and shows excellent pencil hardness.