Abstract: A thermo-therapeutic apparatus and a method for controlling the same are provided.

Abstract: A power source apparatus, according to an aspect of the present disclosure, includes: a circuit on a primary side constituted so that a first voltage with an input voltage stepped down is formed on the primary side of a transformer; and a circuit on a secondary side including first to N sub-circuits (N is a natural number of 2 or more), each sub-circuit operating to generate a power source voltage of a driver configured to drive a power element through a converter operating based on a second voltage formed on the secondary side of the transformer after the first voltage is transformed by the transformer, in which the power source voltage generated by the sub-circuit is determined dependently on an output voltage of the converter.

Abstract: A saturator, configured for use in a water treating apparatus, includes a chamber, in which a first flow path through which first fluid flows is formed, and a plurality of porous membranes disposed in the first flow path, a second flow path formed within the plurality of porous membranes, through which second fluid flows. The first fluid is dissolved in the second fluid, or the second fluid is dissolved in the first fluid. Accordingly, a contact area between the first fluid and the second fluid is enlarged, and thus, a dissolving speed increases.

Abstract: A display device comprises a substrate; a circuit array layer comprising pixel drivers, data lines, first dummy lines, and second dummy lines; and a light emitting array layer. The display area comprises middle, first side, and second side regions. The data lines comprise first, second, and third data lines disposed in the middle, first side, and second side regions, respectively. The first dummy lines comprise a first data detour line disposed in the first side region and adjacent to a part of the second data line, and auxiliary lines. The second dummy lines comprise a second data detour line configured to connect the first data detour line to the third data line, and additional lines. The auxiliary lines comprise a bias auxiliary line to which a bias power is applied; and a second power auxiliary line to which a second power is applied.

Abstract: A powertrain for an electric vehicle includes: a planetary gear having a first rotating element, a second rotating element, and a third rotating element, wherein a first rotating element is connected to a first shaft and the second rotating element is connected to a second shaft; a first motor configured to selectively supply power to the first shaft at two or more gear ratios; a first shift assembly configured to transfer power of the first motor to the first shaft through one of two or more external engagement gear trains having different gear ratios; and a second motor configured to selectively supply power to the first shaft and the second shaft. The third shaft is fixedly disposed on a transmission housing, and any two shafts among the first, second and third shafts restrain each other.

Abstract: The disclosure relates to a non-dispersive infrared (NDIR) gas sensor which detects the concentration of gas with a simple structure and method by manufacturing an optical waveguide with a gas-permeable polymer material instead of a conventional cavity or chamber type. An optical signal travels through the optical waveguide of gas-permeable polymer by total internal reflection, and the gas naturally penetrates the optical waveguide without the use of separate inlet and outlet openings, so that the optical signal and gas particles come into contact with each other within the optical waveguide. Since the optical signal detected by a photodetector at the other end of the optical waveguide after traveling while contacting the gas particles has properties changed according to the concentration of the gas which they have contacted in the optical waveguide, it is possible to measure the concentration of a specific gas from the detected optical signal.

Abstract: An ingot growth apparatus is disclosed. The ingot growth apparatus according to an embodiment of the present invention may comprise: a growth furnace having a main crucible which is disposed inside the growth furnace and in which molten silicon is held in order to grow an ingot; a susceptor formed to surround the outer surface of the main crucible and heating the main crucible; a heater formed to surround the outer surface of the susceptor and including a coil which is supplied with power to generate a magnetic field and heats the susceptor by electromagnetic induction from the magnetic field; and a heat insulation member disposed between the coil and the susceptor.

Abstract: A display apparatus including a display and a supporter. The supporter being mounted on the display and configured to support the display and rotate the display module between a first position and a second position. The supporter including a drive motor, a first gear, and a detection sensor. The drive motor configured to supply a driving force to rotate the display. The first gear configured to rotate together with the display by receiving the driving force from the drive motor. The detection sensor configured to detect a rotation amount of a second gear configured to rotate in with the first gear.

Abstract: The present invention provides a method for the prevention or treatment of a neurodegenerative disorder in a subject, comprising administering to the subject a therapeutically effective amount of an agent that increases Nix-mediated mitophagy in a cell. Also provided is a method for identifying a compound useful for the prevention or treatment of a neurodegenerative disorder in a subject.

Abstract: The present disclosure provides substrate heat-treating apparatus including a process chamber in which a flat substrate to be heat treated is placed, the process chamber comprising a beam irradiating plate placed below the flat substrate and an infrared transmitting plate placed above the flat substrate; a beam irradiating module for irradiating a laser beam to a lower surface of the flat substrate through the beam irradiating plate; and a gas circulation cooling module for spraying a cooling gas to an upper surface of the infrared transmitting plate, thereby cooling the infrared transmitting plate.

Abstract: Disclosed is a high-temperature endoscope of an ingot growth apparatus in which impurity deposition is prevented by having a structure that increases a flow rate of an inert gas for preventing impurities from being deposited. A high-temperature endoscope preventing impurities of an ingot growth apparatus from being deposited, according to one embodiment of the present invention, may comprise: a frame extending to the inside of a chamber of the ingot growth apparatus and having a gas discharge port provided at an end portion thereof through which an inert gas is discharged; a lens installed at the center of the end portion of the frame and protected by the inert gas discharged from the gas discharge port; and a guide tube installed on an outer surface of the frame and having a guide portion extending from the end portion of the frame so as to guide the inert gas to prevent impurities from being deposited on the lens by increasing a flow rate of the inert gas.

Abstract: An ingot growing apparatus is disclosed. An ingot growing apparatus according to an aspect of the present invention comprises a growth furnace for growing an ingot, and a main crucible which is accommodated in the growth furnace and accommodates molten silicon, wherein the main crucible comprises: a main crucible bottom portion; a main crucible side portion that extends upwardly from the main crucible bottom portion; and a main crucible inclined portion that has an inclined surface extending upward and outward from the main crucible side portion. In addition, when the molten silicon is supplied from the upper side of the main crucible side portion into the main crucible, the molten silicon is guided into the main crucible along the inclined surface, thereby preventing the molten silicon from splashing around the main crucible.

Abstract: An energy-saving ingot growing device is disclosed. The ingot growing device according to the present invention comprises: a chamber having provided therein a crucible heated by a heat source in order to melt silicon; a side surface insulating material provided inside the chamber so as to insulate the side surface of the crucible; and an observation part provided to penetrate the chamber and the side surface insulating material so that the inside of the crucible can be observed.

Abstract: The present invention relates to a premelter for pre-melting silicon before supplying to a main crucible capable of accurately measuring an input amount of molten silicon input into an ingot growth crucible, thereby effectively controlling the input amount, and a method for controlling the same. According to an embodiment of the present invention, disclosed is a premelter for pre-melting silicon before supplying to a main crucible, comprising: a preliminary crucible for supplying silicon in a molten state to a main crucible in which an ingot is grown after heating the silicon material in a solid state to become silicon in a molten state; a preliminary crucible moving module configured to tilt the preliminary crucible to one of a first position in which the preliminary crucible contains the solid silicon material or the molten silicon or a second position where the molten silicon in the preliminary crucible flows into the main crucible; and a control unit for controlling the preliminary crucible moving module.

Abstract: Disclosed is an ingot growing apparatus. An ingot growing apparatus according to an embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon and is rotated clockwise or counterclockwise to rotate the molten silicon clockwise or counterclockwise in order to grow an ingot, a susceptor formed to surround an outer surface of the main crucible and rotated in the same direction as the main crucible, and a preliminary melting unit which receives a solid silicon material, melts the solid silicon material into molten silicon, and supplies the molten silicon to the main crucible, wherein the preliminary melting unit includes a preliminary crucible which accommodates the molten silicon, and the preliminary crucible supplies the molten silicon contained in the preliminary crucible to the main crucible in a direction in which the molten silicon contained in the main crucible rotates.

Abstract: Disclosed is a continuous ingot growing apparatus. The continuous ingot growing apparatus according to the present invention may include a growth furnace in which a main crucible is positioned, wherein the main crucible accommodates molten-state silicon to grow an ingot, a material supply unit which supplies a solid-state silicon material before being melted into molten-state silicon, a quantitative supply unit which measures an amount of the solid-state silicon material supplied from the material supply unit and supplies a predetermined amount of the solid-state silicon material, and a preliminary melting unit which melts the predetermined amount of the solid-state silicon material supplied from the quantitative supply unit and supplies molten-state silicon to the main crucible.

Abstract: The present invention relates to a continuous ingot growing apparatus, and more specifically, to a continuous ingot growing apparatus which melts a solid silicon material supplied to a preliminary crucible to supply the solid silicon material to a main crucible and which can adjust a supply amount of molten silicon while blocking floating matter floating on top of the molten silicon so as not to be supplied.

Abstract: Disclosed is an ingot growing apparatus. The ingot growing apparatus according to the embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon to grow an ingot, a preliminary crucible which receives a solid silicon material, melts the solid silicon material, and supplies molten silicon to the main crucible, a measurement unit which is installed to pass through the growth furnace and measures a change in level of the surface of the molten silicon in the main crucible, and a control unit which controls supply of the molten silicon in the preliminary crucible to the main crucible on the basis of the measured change in the level of the surface of the molten silicon.

Abstract: The present invention relates to mouse antibodies that bind to angiopoietin-2 (Ang2), humanized anti-Ang2 antibodies derived therefrom, and the use thereof. The anti-Ang2 antibodies have a dual function of activating the Tie2 receptor together with neutralizing Ang2. The anti-Ang2 antibodies show the property of normalizing abnormal and pathological blood vessels, and thus exhibits therapeutic efficacy against various diseases and disorders associated with abnormal blood vessels. The present invention further provides an angiogenesis inhibitor and a composition for treatment of diseases associated with abnormal Ang2 expression and Tie2 dysregulation, which comprise the antibody as an active ingredient, and a composition for diagnosing diseases associated with Ang2 inhibition and Tie2 activation, which comprises the antibody.

Abstract: The present invention provides an ultra high strength cold rolled steel sheet having excellent spot weldability and formability. The ultra high strength cold rolled steel sheet, according to one embodiment of the present invention, comprises, in weight percent,: 0.05% to 0.09% of carbon (C); 0.5% to 1.0% of silicon (Si); 2.0% to 2.8% of manganese (Mn); 0.2% to 0.5% of aluminum (Al); 0.8% to 1.2% of chromium (Cr); 0.05% to 0.10% of molybdenum (Mo); 0.03% to 0.06% of titanium (Ti); 0.001% to 0.003% of boron (B); 0.02% to 0.05% of antimony (Sb); 0.001% to 0.015% of phosphorus (P); more than 0% to 0.003% of sulfur (5); 0.004% to 0.006% of nitrogen (N); and a balance of iron (Fe) and other inevitable impurities, and the ultra high strength cold rolled steel sheet comprises a microstructure comprising ferrite and low hardness martensite.