Patents by Inventor Jin-Uk Lee

Jin-Uk Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210227221
    Abstract: There is provided an image encoding/decoding method and apparatus. The image decoding method comprises decoding size information of a quantization group from a bitstream, acquiring a delta quantization parameter of a current block on the basis of the size information of the quantization group, and deriving a quantization parameter for the current block on the basis of the delta quantization parameter.
    Type: Application
    Filed: June 25, 2019
    Publication date: July 22, 2021
    Applicants: Electronics and Telecommunications Research Institute, INDUSTRY ACADEMY COOPERATION FOUNDATION OF SEJONG UNIVERSITY, INDUSTRY-UNIVERSITY COOPERATION FOUNDATION KOREA AEROSPACE UNIVERSITY
    Inventors: Sung Chang LIM, Jung Won KANG, Ha Hyun LEE, Jin Ho LEE, Hui Yong KIM, Yung Lyul LEE, Myung Jun KIM, Nam Uk KIM, Ji Youn JUNG, Yang Woo KIM, Jae Gon KIM
  • Publication number: 20210227222
    Abstract: There is provided an video encoding/decoding method and apparatus. The video decoding method comprises acquiring a bitstream including a predetermined context element, performing at least one of a context model determination, a probability update, and a probability interval determination on the predetermined syntax element, and arithmetically decoding the predetermined syntax element on the basis of a result of the performance.
    Type: Application
    Filed: June 12, 2019
    Publication date: July 22, 2021
    Applicants: Electronics and Telecommunications Research Institute, INDUSTRY-UNIVERSITY COOPERATION FOUNDATION KOREA AEROSPACE UNIVERSITY, INDUSTRY ACADEMY COOPERATION FOUNDATION OF SEJONG UNIVERSITY
    Inventors: Jin Ho LEE, Jung Won KANG, Ha Hyun LEE, Sung Chang LIM, Hui Yong KIM, Jae Gon KIM, Do Hyeon PARK, Yong Uk YOON, Yung Lyul LEE
  • Patent number: 11028488
    Abstract: Disclosed is a method of etching a metal barrier layer and a metal layer. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.
    Type: Grant
    Filed: September 18, 2019
    Date of Patent: June 8, 2021
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SOULBRAIN CO., LTD.
    Inventors: Jungah Kim, Mihyun Park, Jinwoo Lee, Keonyoung Kim, Hyosan Lee, Hoon Han, Jin Uk Lee, Jung Hun Lim
  • Patent number: 11008513
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Grant
    Filed: September 24, 2019
    Date of Patent: May 18, 2021
    Inventors: Jin Uk Lee, Jae Wan Park, Jung Hun Lim
  • Publication number: 20210130691
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Application
    Filed: November 3, 2020
    Publication date: May 6, 2021
    Inventors: Jin Uk LEE, Jae Wan PARK, Jung Hun LIM
  • Publication number: 20210130692
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Application
    Filed: November 3, 2020
    Publication date: May 6, 2021
    Inventors: Jin Uk LEE, Jae Wan PARK, Jung Hun LIM
  • Patent number: 10995269
    Abstract: An etchant composition includes an inorganic acid, a siloxane compound, an ammonium compound, and a solvent, wherein the siloxane compound is represented by General Formula (I): A method of fabricating an integrated circuit device includes forming a structure on a substrate, the structure having a surface on which an oxide film and a nitride film are exposed; and selectively removing the nitride film from the oxide film and the nitride film by bringing the etchant composition into contact with the structure.
    Type: Grant
    Filed: November 17, 2017
    Date of Patent: May 4, 2021
    Assignees: Samsung Electronics Co., Ltd., Soulbrain Co., Ltd.
    Inventors: Jin-Woo Lee, Hoon Han, Keon-Young Kim, Jung-Hun Lim, Jin-Uk Lee, Jae-Wan Park
  • Publication number: 20210079266
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Application
    Filed: November 6, 2020
    Publication date: March 18, 2021
    Inventors: Jae-Wan PARK, Jung-Hun LIM, Jin-Uk LEE
  • Publication number: 20210054278
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Application
    Filed: November 3, 2020
    Publication date: February 25, 2021
    Inventors: Jin Uk LEE, Jae Wan PARK, Jung Hun LIM
  • Publication number: 20210054284
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Application
    Filed: November 10, 2020
    Publication date: February 25, 2021
    Applicant: SOULBRAIN CO., LTD.
    Inventors: Jung Hun LIM, Jin Uk LEE, Jae Wan PARK
  • Publication number: 20210054277
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Application
    Filed: November 3, 2020
    Publication date: February 25, 2021
    Inventors: Jin Uk LEE, Jae Wan PARK, Jung Hun LIM
  • Publication number: 20210054282
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Application
    Filed: November 10, 2020
    Publication date: February 25, 2021
    Applicant: SOULBRAIN CO., LTD.
    Inventors: Jung Hun LIM, Jin Uk LEE, Jae Wan PARK
  • Publication number: 20210054286
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Application
    Filed: November 10, 2020
    Publication date: February 25, 2021
    Applicant: SOULBRAIN CO., LTD.
    Inventors: Jung Hun LIM, Jin Uk LEE, Jae Wan PARK
  • Publication number: 20210054285
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Application
    Filed: November 10, 2020
    Publication date: February 25, 2021
    Applicant: SOULBRAIN CO., LTD.
    Inventors: Jung Hun LIM, Jin Uk LEE, Jae Wan PARK
  • Publication number: 20210054235
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Application
    Filed: November 6, 2020
    Publication date: February 25, 2021
    Inventors: Jae-Wan PARK, Jung-Hun LIM, Jin-Uk LEE
  • Publication number: 20210054280
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Application
    Filed: November 3, 2020
    Publication date: February 25, 2021
    Inventors: Jin Uk LEE, Jae Wan PARK, Jung Hun LIM
  • Publication number: 20210054234
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Application
    Filed: November 6, 2020
    Publication date: February 25, 2021
    Inventors: Jae-Wan PARK, Jung-Hun LIM, Jin-Uk LEE
  • Patent number: D913945
    Type: Grant
    Filed: January 10, 2019
    Date of Patent: March 23, 2021
    Assignee: GigaLane Co., Ltd.
    Inventors: Kyung Hun Jung, Hwa Yoon Song, Jin Uk Lee, Hee seok Jung, Chang Hyun Yang, Sun Hwa Cha, Eun Jung Kim
  • Patent number: D914606
    Type: Grant
    Filed: September 28, 2020
    Date of Patent: March 30, 2021
    Assignee: GIGALANE CO., LTD.
    Inventors: Kyung Hun Jung, Hwa Yoon Song, Hee Seok Jung, Jin Uk Lee, Chang Hyun Yang, Sun Hwa Cha, Eun Jung Kim
  • Patent number: D915286
    Type: Grant
    Filed: September 28, 2020
    Date of Patent: April 6, 2021
    Assignee: GIGALANE CO., LTD.
    Inventors: Kyung Hun Jung, Hwa Yoon Song, Hee Seok Jung, Jin Uk Lee, Chang Hyun Yang, Sun Hwa Cha, Eun Jung Kim