Abstract: A printed circuit board includes: a first insulating material; and a second insulating material disposed on one surface of the first insulating material, and including first and second cavities having depths different from each other. At least one groove portion is disposed in a side surface of each of the first and second cavities.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A printed circuit board includes a first insulating layer; a protective filler layer disposed on one surface of the first insulating layer; a first wiring layer disposed on the one surface of the first insulating layer and having a pad protruding with respect to the protective filler layer; a first via passing through the first insulating layer and contacting the pad; and a second insulating layer disposed on the first wiring layer and the protective filler layer, and having a cavity exposing the pad and at least a portion of the protective filler layer, respectively.

Abstract: A display device comprises a display panel including a plurality of sub-pixels defined by a plurality of gate lines and a plurality of data lines; and an auxiliary ground voltage line disposed between two adjacent data lines of the plurality of data lines.

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract: A printed circuit board includes a first board including a plurality of first insulating layers and a plurality of first wiring layers disposed between the plurality of first insulating layers, respectively; and a second board disposed on one surface of the first board and including a plurality of second insulating layers and a plurality of second wiring layers disposed on or between the plurality of second insulating layers, respectively. At least one of the plurality of first insulating layers has a thickness less than a thickness of at least one of the plurality of second insulating layers. The first board further includes a through-via penetrating each of the plurality of first insulating layers and connected to one of the plurality of second wiring layers.

Abstract: A printed circuit board includes: a first insulating layer having a recess portion in one surface of the first insulating layer; a first circuit pattern embedded in the first insulating layer and being in contact with a lower surface of the recess portion; a second insulating layer disposed on the one surface of the first insulating layer to be disposed in at least a portion of the recess portion; and a via penetrating through at least a portion of the second insulating layer, disposed in the recess portion, and connected to the first circuit pattern.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A printed circuit board includes an insulating layer, a circuit pattern embedded in the insulating layer and including a first metal layer, a second metal layer and a third metal layer disposed between the first metal layer and the second metal layer, and a connection conductor disposed on one surface of the insulating layer and connected to the circuit pattern, wherein the first metal layer is exposed through the one surface of the insulating layer.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A Depth of Charge (DOC) setting apparatus includes a charging and discharging unit for completely charging a battery to a set target voltage and discharging the completely-charged battery; a profile obtaining unit for obtaining a voltage profile for capacity and voltage of the battery while the battery is charged and discharged and obtaining a differential profile for capacity and differential voltage of the battery from the obtained voltage profile; and a processor for sequentially selecting any one of a plurality of preset voltages and setting the selected preset voltage as the target voltage and for obtaining a feature value for a target peak in each of a plurality of differential profiles and setting a DOC for the battery based on the plurality of obtained feature values.

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract: A printed circuit board includes a first insulating layer; a first wiring layer disposed on one surface of the first insulating layer and including a pad; a second insulating layer disposed on the one surface of the first insulating layer and covering the first wiring layer; a second wiring layer disposed on one surface of the second insulating layer and including a metal pattern; a third insulating layer disposed on the one surface of the second insulating layer and covering the second wiring layer; and a cavity extending through each of the second and third insulating layers, and having a bottom surface and a sidewall respectively exposing the pad of the first wiring layer and the metal pattern of the second wiring layer. The cavity includes a non-through groove in the one surface of the first insulating layer.