Patents by Inventor Jin Woong Lee

Jin Woong Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210280383
    Abstract: A fuse box for a battery of a vehicle includes: a lower housing having a space in which a fuse is housed and a bus bar for electrically connecting the battery and the fuse is seated; a plate-shaped upper housing having a through hole formed at a central portion thereof and a first extending portion extending upward along a circumference of the through hole, where the upper housing is assembled on an upper side of the lower housing; and a fuse cover that is coupled to an upper side of the upper housing to cover the fuse exposed through the through hole of the upper housing.
    Type: Application
    Filed: September 28, 2020
    Publication date: September 9, 2021
    Inventors: Beom Joo Kwon, Mi Ok Kim, Jae Seung Lee, Jin Woong Lee
  • Publication number: 20210274179
    Abstract: Disclosed are a method for determining a color difference component quantization parameter and a device using the method. Method for decoding an image can comprise the steps of: decoding a color difference component quantization parameter offset on the basis of size information of a transform unit; and calculating a color difference component quantization parameter index on the basis of the decoded color difference component quantization parameter offset. Therefore, the present invention enables effective quantization by applying different color difference component quantization parameters according to the size of the transform unit when executing the quantization.
    Type: Application
    Filed: May 17, 2021
    Publication date: September 2, 2021
    Inventors: Sung Chang LIM, Hui Yong KIM, Se Yoon JEONG, Jong Ho KIM, Ha Hyun LEE, Jin Ho LEE, Jin Soo CHOI, Jin Woong KIM
  • Publication number: 20210274181
    Abstract: Disclosed are a method for determining a color difference component quantization parameter and a device using the method. Method for decoding an image can comprise the steps of: decoding a color difference component quantization parameter offset on the basis of size information of a transform unit; and calculating a color difference component quantization parameter index on the basis of the decoded color difference component quantization parameter offset. Therefore, the present invention enables effective quantization by applying different color difference component quantization parameters according to the size of the transform unit when executing the quantization.
    Type: Application
    Filed: May 17, 2021
    Publication date: September 2, 2021
    Inventors: Sung Chang LIM, Hui Yong KIM, Se Yoon JEONG, Jong Ho KIM, Ha Hyun LEE, Jin Ho LEE, Jin Soo CHOI, Jin Woong KIM
  • Publication number: 20210274180
    Abstract: Disclosed are a method for determining a color difference component quantization parameter and a device using the method. Method for decoding an image can comprise the steps of: decoding a color difference component quantization parameter offset on the basis of size information of a transform unit; and calculating a color difference component quantization parameter index on the basis of the decoded color difference component quantization parameter offset. Therefore, the present invention enables effective quantization by applying different color difference component quantization parameters according to the size of the transform unit when executing the quantization.
    Type: Application
    Filed: May 17, 2021
    Publication date: September 2, 2021
    Inventors: Sung Chang LIM, Hui Yong KIM, Se Yoon JEONG, Jong Ho KIM, Ha Hyun LEE, Jin Ho LEE, Jin Soo CHOI, Jin Woong KIM
  • Patent number: 11103203
    Abstract: A mobile X-ray imaging apparatus includes a first column rotatably coupled to a main body and extending in one direction; a second column extending in the one direction and slidably coupled to the first column in an extension direction of the first column; a display provided in the main body; and a indicator arranged in one end of the second column.
    Type: Grant
    Filed: June 19, 2019
    Date of Patent: August 31, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-woo Lee, Dae-woong Han
  • Patent number: 11102471
    Abstract: According to one embodiment of the present invention, a video information encoding method comprises: a step of predicting information of the current coding unit to generate prediction information; and a step of determining whether the information of the current coding unit coincides with the prediction information. If the information of the current coding unit coincides with the prediction information, a flag indicating that the information of the current coding unit coincides with the prediction information is encoded and transmitted. If the information of the current coding unit does not coincide with the prediction information, a flag indicating that the information of the current coding unit does not coincide with the prediction information is encoded and transmitted and the information of the current coding unit is encoded and transmitted.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: August 24, 2021
    Assignees: Electronics and Telecommunications Research Institute, University-Industry Cooperation Group of Kyung Hee University
    Inventors: Se Yoon Jeong, Hui Yong Kim, Sung Chang Lim, Jin Ho Lee, Ha Hyun Lee, Jong Ho Kim, Jin Soo Choi, Jin Woong Kim, Chie Teuk Ahn, Gwang Hoon Park, Kyung Yong Kim, Han Soo Lee, Tae Ryong Kim
  • Patent number: 11102494
    Abstract: The method for scanning a transform coefficient of the present invention comprises the steps of: determining a reference transform block for a block to be decoded; deriving a scanning map of the block to be decoded using scanning information of the reference transform block; and executing a reverse-scan on the transform coefficient of the block to be decoded using the derived scanning map. The present invention enhances image encoding/decoding efficiency.
    Type: Grant
    Filed: March 5, 2012
    Date of Patent: August 24, 2021
    Assignee: ELECTRONICS AND TELECOMMUNICATION RESEARCH INSTITUTE
    Inventors: Sung Chang Lim, Hui Yong Kim, Se Yoon Jeong, Jong Ho Kim, Ha Hyun Lee, Jin Ho Lee, Jin Soo Choi, Jin Woong Kim
  • Publication number: 20210098653
    Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).
    Type: Application
    Filed: December 11, 2020
    Publication date: April 1, 2021
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong LEE, Kyoung Wan KIM, Tae Jun PARK, Sang Won WOO
  • Patent number: 10950757
    Abstract: A flip chip type light emitting diode chip is disclosed. The light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode; a contact electrode laterally spaced apart from the mesa; a current spreader electrically connected to the transparent electrode; a first insulating reflection layer covering the substrate; and a second insulating reflection layer disposed under the substrate, and including the distributed Bragg reflector.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: March 16, 2021
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong Lee, Kyoung Wan Kim, Tae Jun Park, Sang Won Woo
  • Patent number: 10937935
    Abstract: A light emitting diode chip includes: a first conductivity type semiconductor layer; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode being in ohmic contact with the second conductivity type semiconductor layer; a first current spreader being in ohmic contact with the first conductivity type semiconductor layer; a second current spreader electrically connected to the transparent electrode; an insulation layer covering the mesa, the first current spreader and the second current spreader, and including a distributed Bragg reflector. A lateral distance between the first current spreader and the mesa is larger than a thickness of the insulation layer, and a first side surface of the first current spreader close to the mesa is longer than the second side surface thereof.
    Type: Grant
    Filed: June 26, 2019
    Date of Patent: March 2, 2021
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong Lee, Kyoung Wan Kim, Keum Ju Lee
  • Publication number: 20210005787
    Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).
    Type: Application
    Filed: September 18, 2020
    Publication date: January 7, 2021
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong LEE, Kyoung Wan KIM, Tae Jun PARK, Sang Won WOO
  • Patent number: 10849263
    Abstract: An agricultural work vehicle according to an aspect of the present invention, which can adaptively adjust the velocity profile of the hitch according to the weight of the work machine, is characterized by comprising: a hitch on which an work machine is mounted; a weight calculation unit that calculates the weight of the work machine when the work machine is lifted following a first lift of the hitch; and a hitch controller that firstly lifts the hitch according to a reference velocity profile comprising a constant-velocity section (T) and, when calculation of the weight of the work machine is completed, generates an updated velocity profile comprising acceleration sections (a1, a2), constant-velocity sections (b1, b2), and deceleration sections (c1, c1) according to the weight of the work machine, and secondly lifts the hitch according to the updated velocity profile.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: December 1, 2020
    Assignee: LS MTRON LTD.
    Inventor: Jin Woong Lee
  • Publication number: 20200184266
    Abstract: A method of identifying and analyzing materials includes selecting at least two elements, collecting data of a plurality of compounds analyzed to be producible by the at least two elements, preparing image or spectrum-type analysis data for each of the plurality of collected compounds, selecting binary or higher-order compounds from among the plurality of compounds to mix the selected compounds at a predetermined mixing ratio, and generating training data including resultant data obtained by combining and processing the image or spectrum-type analysis data according to the predetermined mixing ratio, performing machine learning using the training data, and identifying and/or analyzing image or spectrum-type analysis data obtained from an actual material, using a model obtained through the machine learning.
    Type: Application
    Filed: December 6, 2019
    Publication date: June 11, 2020
    Inventors: Kee-sun SOHN, Jin-woong Lee
  • Publication number: 20200176641
    Abstract: A light emitting diode includes a first conductivity type semiconductor layer and a mesa disposed on the first conductivity type semiconductor layer wherein the mesa is a semiconductor stack including an active layer and a second conductivity type semiconductor layer; a ZnO layer disposed on the second conductivity type semiconductor layer; a lower insulation layer covering the ZnO layer and the mesa, and including an opening exposing the ZnO layer; a first pad metal layer disposed on the lower insulation layer, and electrically connected to the first conductivity type semiconductor layer; a second pad metal layer electrically connected to the ZnO layer through the opening of the lower insulation layer, and an upper insulation layer covering the first pad metal layer and the second pad metal layer.
    Type: Application
    Filed: December 6, 2019
    Publication date: June 4, 2020
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Seom Geun LEE, Chan Seob SHIN, Myeong Hak YANG, Jin Woong LEE
  • Publication number: 20200127167
    Abstract: A flip chip type light emitting diode chip is disclosed. The light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode; a contact electrode laterally spaced apart from the mesa; a current spreader electrically connected to the transparent electrode; a first insulating reflection layer covering the substrate; and a second insulating reflection layer disposed under the substrate, and including the distributed Bragg reflector.
    Type: Application
    Filed: August 23, 2019
    Publication date: April 23, 2020
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong LEE, Kyoung Wan KIM, Tae Jun PARK, Sang Won WOO
  • Patent number: 10608141
    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: March 31, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
  • Patent number: 10559715
    Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: February 11, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Mae Yi Kim, Jin Woong Lee, Yeo Jin Yoon, Seom Geun Lee, Yong Woo Ryu, Keum Ju Lee
  • Patent number: 10534483
    Abstract: The present invention relates to a touch panel and, more particularly, to a touch panel capable of improving electrical conductive characteristics of the touch panel, reducing the size of the touch panel, improving the visibility of the touch panel, and minimizing damage to a substrate when a failure test is performed on the touch panel.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: January 14, 2020
    Assignee: LG Innotek Co., Ltd.
    Inventors: Jin Woong Lee, Byung Youl Moon, Jung Hwan Bang, Kwang Yong Jin, Yong Jae Choi
  • Publication number: 20200006612
    Abstract: A light emitting diode chip includes: a first conductivity type semiconductor layer; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode being in ohmic contact with the second conductivity type semiconductor layer; a first current spreader being in ohmic contact with the first conductivity type semiconductor layer; a second current spreader electrically connected to the transparent electrode; an insulation layer covering the mesa, the first current spreader and the second current spreader, and including a distributed Bragg reflector. A lateral distance between the first current spreader and the mesa is larger than a thickness of the insulation layer, and a first side surface of the first current spreader close to the mesa is longer than the second side surface thereof.
    Type: Application
    Filed: June 26, 2019
    Publication date: January 2, 2020
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong LEE, Kyoung Wan KIM, Keum Ju LEE
  • Patent number: 10411164
    Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (?2?) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ?2? scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (?) scan, is equal to or less than 900 arc sec.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: September 10, 2019
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong Lee, Chan Seob Shin, Keum Ju Lee, Seom Geun Lee, Myoung Hak Yang, Jacob J. Richardson, Evan C. O'Hara