Abstract: A motion control servo loop apparatus, comprising: a feed-forward control module, and a proportional-integral-derivative (PID) control loop and a compensation adder. The feed-forward control module is capable of generating a feed-forward compensation. The PID control loop further comprises: a proportional control module, an integral control module and a derivative control module. The proportional control module is capable of generating a proportional compensation. The derivative control module is capable of generating a derivative compensation. The integral control module uses a digital differential analyzer (DDA) algorithm to perform integration for accumulated errors with respect to each sampling clock at each DDA pulse and thus output an accumulated error, which is then processed to generate an integral compensation.

Abstract: A method of forming a structure useful in all forms of deposited metals, elemental metals, metal alloys, metal compounds, metal systems, including refractory metals such as tungsten and tantalum is provided. The structure generally comprises a substrate, a first layer formed atop the substrate, and a second layer formed atop the first layer. The first layer comprises a metal, which can be chromium, gold, platinum, aluminum, nickel, or copper. The second layer comprises a metal, elemental metal, metal alloy, metal compound, or metal system comprising a refractory metal such as tungsten or tantalum. The substrate can be a silicon, quartz or glass, metal, metal oxide or nitride.

Abstract: The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, according to the invention, can enhance the yield rate of industrial mass production regarding the composite wafer structure.

Abstract: A motion control servo loop apparatus, comprising: a feed-forward control module, and a proportional-integral-derivative (PID) control loop and a compensation adder. The feed-forward control module is capable of generating a feed-forward compensation. The PID control loop further comprises: a proportional control module, an integral control module and a derivative control module. The proportional control module is capable of generating a proportional compensation. The derivative control module is capable of generating a derivative compensation. The integral control module uses a digital differential analyzer (DDA) algorithm to perform integration for accumulated errors with respect to each sampling clock at each DDA pulse and thus output an accumulated error, which is then processed to generate an integral compensation.

Abstract: A method of fabricating a metal-oxide-semiconductor transistor is provided. A first gate structure and a second gate structure are formed on a substrate. The first gate structure has a dimension greater than the second gate structure. Then, first lightly doped drain regions are formed in the substrate on two sides of the first gate structure. A lightly doped drain annealing process is performed. Next, second lightly doped drain regions are formed in the substrate on two sides of the second gate structure. First spacers are formed on the sidewalls of the first gate structure and second spacers are formed on the sidewalls of the second gate structure at the same time. Afterwards, first source/drain regions are formed in the substrate on two sides of the first spacers and second source/drain regions are formed in the substrate on two sides of the second spacers. A source/drain annealing process is performed.

Abstract: This proposal presents performance indices and search criteria for the text script generation in the design of corpus-based TTS systems. Based on our criteria a new search method is presented to solve the text selection problem more systematically and efficiently, unlike previous researches either concentrated on covering rate or on hit rate. By control a weighting factor, the covering rate of unit types can be increased to improve the robustness of the TTS system. Finally, the scalable and controllable design of the multi-stage search can produce various kinds of text scripts ideally suitable for the requirement of various kinds of corpus-based TTS systems.

Abstract: A method of forming a structure useful in all forms of deposited metals, elemental metals, metal alloys, metal compounds, metal systems, including refractory metals such as tungsten and tantalum is provided. The structure generally comprises a substrate, a first layer formed atop the substrate, and a second layer formed atop the first layer. The first layer comprises a metal, which can be chromium, gold, platinum, aluminum, nickel, or copper. The second layer comprises a metal, elemental metal, metal alloy, metal compound, or metal system comprising a refractory metal such as tungsten or tantalum. The substrate can be a silicon, quartz or glass, metal, metal oxide or nitride.

Abstract: A method of text script generation for a corpus-based text-to-speech system includes searching in a source corpus having L sentences, selecting N sentences with a best integrated efficiency as N best cases, and setting iteration k to be 1; for each case n of the N best cases, selecting Mk+1 best sentences with the best integrated efficiency from the unselected sentences in the source corpus; keeping N best cases out of the total unselected sentences for next iteration, and increasing iteration k by 1; and if a termination criterion being reached, setting the best case in the N traced cases as the text script, otherwise, returning to the (k+1)th iteration of searching in the unselected sentences for (k+1)th sentence; wherein the best integrated efficiency depends on a function of combining the covering rate of the synthesis unit type, the hit rate of the synthesis unit type, and the text script size.

Abstract: A method of fabricating a metal-oxide-semiconductor transistor is provided. A first gate structure and a second gate structure are formed on a substrate. The first gate structure has a dimension greater than the second gate structure. Then, first lightly doped drain regions are formed in the substrate on two sides of the first gate structure. A lightly doped drain annealing process is performed. Next, second lightly doped drain regions are formed in the substrate on two sides of the second gate structure. First spacers are formed on the sidewalls of the first gate structure and second spacers are formed on the sidewalls of the second gate structure at the same time. Afterwards, first source/drain regions are formed in the substrate on two sides of the first spacers and second source/drain regions are formed in the substrate on two sides of the second spacers. A source/drain annealing process is performed.

Abstract: The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, according to the invention, can enhance the yield rate of industrial mass production regarding the composite wafer structure.

Abstract: A method of forming a structure useful in all forms of deposited metals, elemental metals, metal alloys, metal compounds, metal systems, including refractory metals such as Tungsten and Tantalum is provided. The structure generally comprises a substrate, a first layer formed atop the substrate, and a second layer formed atop the first layer. The first layer comprises a metal, which can be chromium, gold, platinum, aluminum, nickel, or copper. The second layer comprises a metal, elemental metal, metal alloy, metal compound, or metal system comprising a refractory metal such as tungsten or tantalum. The substrate can be a silicon, quartz or glass, metal, metal oxide or nitride.

Abstract: This proposal presents performance indices and search criteria for the text script generation in the design of corpus-based TTS systems. Based on our criteria a new search method is presented to solve the text selection problem more systematically and efficiently, unlike previous researches either concentrated on covering rate or on hit rate. By control a weighting factor, the covering rate of unit types can be increased to improve the robustness of the TTS system. Finally, the scalable and controllable design of the multi-stage search can produce various kinds of text scripts ideally suitable for the requirement of various kinds of corpus-based TTS systems.

Abstract: An exhaust gas treatment apparatus for treating exhaust gases generated in semiconductor manufacturing processes. It includes a main pipe, a U pipe, a discharge pipe and a tank. The main pipe has an inlet to receive exhaust gases, a heater surrounding the main pipe to heat the exhaust gases to form exhaust gas powder, a sprinkler to spray cooling water to cool the heated exhaust gases to form vapor and waste water and an outlet to discharge vapor and waste water into the U pipe. The U pipe has a first connector connecting with the main pipe and a second connector connecting with the discharging pipe. The tank is located below the U pipe under the first connector for receiving lump type exhaust gas powder scrapping from the inside wall of the main pipe. The U pipe will not be blocked by the lump type exhaust gas powder so that exhaust gas treatment efficiency won't be harmfully affected.

Abstract: An exhaust gas treatment apparatus for treating exhaust gas generated in semiconductor manufacturing processes. It includes a main pipe, a gas vortex means, a water vortex means, an U pipe and a discharge pipe. The main pipe transforms the exhaust gases to waste powder which are discharged out through the U pipe and the discharge pipe. The gas vortex means and water vortex means are located below the main pipe for generating annular and even downward gas flow and water flow at the outlet of the main pipe for preventing reflux of waste powder from entering into the main pipe. Waste powder thus won't deposit around the outlet. Scraper in the main pipe won't be stuck or deformed. Waste powder may be discharged out through the U pipe and discharge pipe smoothly and efficiently.