Abstract: A negative electrode electrolyte solution which contains titanium ions, a chelating agent, and a catechol-based compound having a catechol structure is used for a negative electrode of a flow battery in which an electrolyte solution is circulated so as to perform charge and discharge.

Abstract: A negative electrode electrolyte solution which contains titanium ions, a chelating agent, and a catechol-based compound having a catechol structure is used for a negative electrode of a flow battery in which an electrolyte solution is circulated so as to perform charge and discharge.

Abstract: A gas sensor has a gas diffusion barrier that supports therein a catalyst that catalyzes a reaction between combustible components and oxygen; a solid electrolyte having oxide ion conductivity; and electrodes formed on opposite surfaces of the solid electrolyte. The electrode is formed in a region into which ambient gas diffuses at a rate limited by the gas diffusion barrier. The electrode also catalyzes the reaction between combustible gas and oxygen. The electrode is formed in a region into which atmosphere is introduced.

Abstract: A process for manufacturing a hollow silicon structure is simplified. A device for manufacturing the silicon structure is a device that manufactures the hollow silicon structure by processing a silicon structure, the silicon structure consisting of a silicon oxide layer formed on a silicon substrate, the silicon oxide layer being covered by a silicon layer. The device is provided with first gas supply members 20 and 21, second gas supply members 30 and 31, an etching reaction chamber 10, selective connecting means 23 to 26, 34 and 35, and a gas discharging means 42. The first gas etches silicon. The second gas etches silicon oxide and barely etches silicon. The selective connecting means 23 to 26, 34 and 35 selectively connect the etching reaction chamber 10 with either the first gas supply members 20 and 21 or the second gas supply members 30 and 31. The gas discharging means 42 discharges gas from the etching reaction chamber 10.

Abstract: Electrode having high activity to oxygen gas and low activity to flammable gas is provided. An oxygen pump includes oxide-ion conductive solid electrolyte 2, electrode 8 which is an inactive electrode, and active electrode 10. Electrode 8 is an electrode that includes Ce0.8Sm0.2O2-?. Electrode 8 is disposed on the gas detection chamber 12 side of solid electrolyte 2. Active electrode 10 is disposed on the open space side of solid electrolyte 2. Gas detection chamber 12 is an enclosed space defined by solid electrolyte 2, insulation layers 6, and diffusion control layer 4.

Abstract: A force sensing element is provided with a gauge portion and a plurality of electrodes. The gauge portion is formed of an n-type semiconductor substrate whose (100)-face serves as a main face, a p-type semiconductor substrate whose (110)-face serves as a main face, or a p-type semiconductor substrate whose (111)-face serves as a main face, and is pressed in a thickness direction of the semiconductor substrate upon receiving a force. The electrodes are electrically connected to the gauge portion such that a current path extending in a direction corresponding to the thickness direction of the semiconductor substrate is formed in the gauge portion. The force sensing element thus constructed makes it possible to detect a force with high precision.

Abstract: Force detection devices may have high detection precision and may prevent current leakage through a strain gage 126 to the outside. For example, a force detection block 120 may include a semiconductor substrate 122, a first insulating layer 124 and a semiconductor layer 126 (strain gage). The strain gage 126 preferably includes a site where resistance changes in accordance with the stress acting thereon. The strain gage 126 preferably constitutes at least a portion of a ridge 130 projects from the surface of the force detection block 120. A force transmission block 138 may be attached to a top surface of the ridge 130. The width of the first insulating layer 124 is preferably greater than the width of the semiconductor layer 126.

Abstract: A NOx sensing cell includes a solid electrolyte having oxide ion conductivity and a pair of electrodes electrically connected to the solid electrolyte. The measuring electrode includes an oxide portion and a noble metallic portion. The oxide portion includes the solid solution of zirconia containing at least ceria. The noble metallic portion contains at least two kinds of metallic elements selected from platinum group elements. In addition to the NOx sensing cell, a NOx sensing device includes a measuring chamber into which a sensing objective gas is introduced, and an oxygen pump cell which is capable of electrochemically removing the oxygen from the measuring chamber. The measuring electrode of the NOx sensing cell is positioned in the measuring chamber.

Abstract: A pressure sensor has a housing having a first block and a second block provided therein. A force to be measured applies upon a upper face of the first block. An upper face of the second block makes contact with a base face of the first block. Piezoresistive elements are formed within the base face of the first block. The resistance values of these piezoresistive elements change as contacting pressure between the first block and the second block changes. A first electrode is formed on an upper face of the first block. A second electrode is formed on a base face of the second block. Electrical characteristics between the first electrode and the second electrode change following change in the contacting pressure between the first block and the second block.

Abstract: A pressure sensor is realized wherein output error of sensor element can be reduced even in the case where the pressure sensor is utilized in high temperature conditions. A pressure sensor is provided with a housing 20, a diaphragm 24 that partitions the interior and the exterior of the housing 20, a sensor element 54 provided within the housing 20, output value of the sensor element 54 varying in accordance with force exerted thereupon, and a force transmitting rod 52 provided within the housing, the force transmitting rod 52 moving downwardly when a pressure is exerted upon the diaphragm 24, the force transmitting rod 52 thereby exerting force upon the sensor element 54. The diaphragm 24 has a central region 26 contacting with the force transmitting rod 52, and a surrounding region 27 surrounding the periphery of the central region 26 and connecting the central region 26 with the housing 20.

Abstract: A pressure sensor is realized wherein output error of sensor element can be reduced even in the case where the pressure sensor is utilized in high temperature conditions. A pressure sensor is provided with a housing 20, a diaphragm 24 that partitions the interior and the exterior of the housing 20, a sensor element 54 provided within the housing 20, output value of the sensor element 54 varying in accordance with force exerted thereupon, and a force transmitting rod 52 provided within the housing, the force transmitting rod 52 moving downwardly when a pressure is exerted upon the diaphragm 24, the force transmitting rod 52 thereby exerting force upon the sensor element 54. The diaphragm 24 has a central region 26 contacting with the force transmitting rod 52, and a surrounding region 27 surrounding the periphery of the central region 26 and connecting the central region 26 with the housing 20.

Abstract: A process for manufacturing a hollow silicon structure is simplifie. A device for manufacturing the silicon structure is a device that manufactures the hollow silicon structure by processing a silicon structure, the silicon structure consisting of a silicon oxide layer formed on a silicon substrate, the silicon oxide layer being covered by a silicon layer. The device is provided with first gas supply members 20 and 21, second gas supply members 30 and 31, an etching reaction chamber 10, selective connecting means 23 to 26, 34 and 35, and a gas discharging means 42. The first gas etches silicon. The second gas etches silicon oxide and barely etches silicon. The selective connecting means 23 to 26, 34 and 35 selectively connect the etching reaction chamber 10 with either the first gas supply members 20 and 21 or the second gas supply members 30 and 31. The gas discharging means 42 discharges gas from the etching reaction chamber 10.

Abstract: A force sensing element is provided with a gauge portion and a plurality of electrodes. The gauge portion is formed of an n-type semiconductor substrate whose (100)-face serves as a main face, a p-type semiconductor substrate whose (110)-face serves as a main face, or a p-type semiconductor substrate whose (111)-face serves as a main face, and is pressed in a thickness direction of the semiconductor substrate upon receiving a force. The electrodes are electrically connected to the gauge portion such that a current path extending in a direction corresponding to the thickness direction of the semiconductor substrate is formed in the gauge portion. The force sensing element thus constructed makes it possible to detect a force with high precision.

Abstract: A pressure sensor has a housing having a first block and a second block provided therein. A force to be measured applies upon a upper face of the first block. An upper face of the second block makes contact with a base face of the first block. Piezoresistive elements are formed within the base face of the first block. The resistance values of these piezoresistive elements change as contacting pressure between the first block and the second block changes. A first electrode is formed on an upper face of the first block. A second electrode is formed on a base face of the second block. Electrical characteristics between the first electrode and the second electrode change following change in the contacting pressure between the first block and the second block.

Abstract: A NOx gas detecting apparatus including an oxygen pumping cell for removing oxygen from a measurement gas, and a NOx detecting cell positioned downstream from the oxygen pumping cell to detect concentration of NOx in the measurement gas, the NOx detecting cell being configured to measure current which flows when oxygen generated from reducing NOx is pumped, wherein the NOx detecting cell has a NOx detecting cathode made of an electrode material including at least one alloy selected from the group consisting of a Pt-Pd alloy, a Pt-Au-Pd alloy, and a Pt-Pd-Rh alloy.

Abstract: Electrode having high activity to oxygen gas and low activity to flammable gas is provided. An oxygen pump includes oxide-ion conductive solid electrolyte 2, electrode 8 which is an inactive electrode, and active electrode 10. Electrode 8 is an electrode that includes Ce0.8Sm0.2O2-&agr;. Electrode 8 is disposed on the gas detection chamber 12 side of solid electrolyte 2. Active electrode 10 is disposed on the open space side of solid electrolyte 2. Gas detection chamber 12 is an enclosed space defined by solid electrolyte 2, insulation layers 6, and diffusion control layer 4.

Abstract: Force detection devices may have high detection precision and may prevent current leakage through a strain gage 126 to the outside. For example, a force detection block 120 may include a semiconductor substrate 122, a first insulating layer 124 and a semiconductor layer 126 (strain gage). The strain gage 126 preferably includes a site where resistance changes in accordance with the stress acting thereon. The strain gage 126 preferably constitutes at least a portion of a ridge 130 projects from the surface of the force detection block 120. A force transmission block 138 may be attached to a top surface of the ridge 130. The width of the first insulating layer 124 is preferably greater than the width of the semiconductor layer 126.

Abstract: Disclosed is a NOx gas detecting apparatus which is capable of detecting a NOx gas at a low concentration with high accuracy over a long period of time even if Au or impurities contained in exhaust gas adheres to a cathode of a NOx detecting cell, and which is excellent in startability and responsivity. The NOx detecting apparatus comprises an oxygen pumping cell for removing oxygen from a measurement gas, and a NOx detecting cell. The NOx detecting cell includes, as a cathode, a cermet electrode composed of a Pt-Pd alloy, a Pt-Au-Pd alloy, or a Pt-Pd-Rh alloy along with a ceramic component. An addition amount of Pd to the alloy is preferably from 1 to 90 wt %. A weight ratio of Pd to Au in the Pt-Au-Pd alloy is preferably not less than 1.67. An addition amount of Rh in the Pt-Pd-Rh alloy is not more than 30 wt %.

Abstract: In a method of manufacturing a semiconductor device, after performing ion-implantation and before forming an oxide film, a silicon substrate is disposed within a furnace to undergo a heat treatment at a temperature equal to or higher than 950° C. for a specific time period (equal to or longer than 15 minutes). When performing the heat treatment and when raising a temperature up to the heat treatment temperature, oxygen is supplied together with nitrogen gas (inert gas). A supply amount of oxygen is controlled to be equal to or less than 5% when raising the temperature up to the heat treatment temperature, and to be equal to or less than 2% when performing the heat treatment. After the heat treatment, the oxidation film is formed. As a result, crystal defects (OSFs) are prevented from being produced on the silicon substrate surface.

Abstract: A magnetic sensor element 1 includes a substrate 10, a conductive layer 12 of a conductive material, and a magnetic layer 11 of a magnetic material, which encloses the conductive layer 12. AC is applied to the element from a drive power source 50, and a detector 60 detects an impedance change due to an external magnetic field. The magnetic layer 11 is bestowed with magnetic anisotropy in a direction orthogonal to the direction of energization of the element 1. With the provision of the conductive layer 12 of conductive material and also with magnetic anisotropy imparted to the magnetic layer 1, the element 1 may be made a low resistivity element. A reactance change and a resistance change of the element due to an external magnetic field change, thus can be effectively detected in drive frequencies two orders of magnitude lower than in the case of a prior art magnetic sensor element.