Patents by Inventor Jiroh Sakaguchi
Jiroh Sakaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7336535Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.Type: GrantFiled: March 28, 2007Date of Patent: February 26, 2008Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.Inventors: Kenichi Kuroda, Toshifumi Takeda, Hisahiro Moriuchi, Masaki Shirai, Jiroh Sakaguchi, Akinori Matsuo, Shoji Yoshida
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Publication number: 20070171692Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.Type: ApplicationFiled: March 28, 2007Publication date: July 26, 2007Inventors: Kenichi Kuroda, Toshifumi Takeda, Hisahiro Moriuchi, Masaki Shirai, Jiroh Sakaguchi, Akinori Matsuo, Shoji Yoshida
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Patent number: 7212425Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.Type: GrantFiled: September 19, 2005Date of Patent: May 1, 2007Assignees: Renesas Technology Corp., Hitachi Ulsi Systems Co., Ltd.Inventors: Kenichi Kuroda, Toshifumi Takeda, Hisahiro Moriuchi, Masaki Shirai, Jiroh Sakaguchi, Akinori Matsuo, Shoji Yoshida
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Patent number: 7002830Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.Type: GrantFiled: October 28, 2003Date of Patent: February 21, 2006Assignees: Renesas Technology Corp., Hitachi VLSI Engineering Corp.Inventors: Kenichi Kuroda, Toshifumi Takeda, Hisahiro Moriuchi, Masaki Shirai, Jiroh Sakaguchi, Akinori Matsuo, Shoji Yoshida
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Publication number: 20060018172Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.Type: ApplicationFiled: September 19, 2005Publication date: January 26, 2006Inventors: Kenichi Kuroda, Toshifumi Takeda, Hisahiro Moriuchi, Masaki Shirai, Jiroh Sakaguchi, Akinori Matsuo, Shoji Yoshida
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Patent number: 6751138Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.Type: GrantFiled: November 21, 2002Date of Patent: June 15, 2004Assignees: Renesas Technology Corporation, Hitachi ULSI Systems Co., Ltd.Inventors: Kenichi Kuroda, Toshifumi Takeda, Hisahiro Moriuchi, Masaki Shirai, Jiroh Sakaguchi, Akinori Matsuo, Shoji Yoshida
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Publication number: 20040090838Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.Type: ApplicationFiled: October 28, 2003Publication date: May 13, 2004Inventors: Kenichi Kuroda, Toshifumi Takeda, Hisahiro Moriuchi, Masaki Shirai, Jiroh Sakaguchi, Akinori Matsuo, Shoji Yoshida
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Publication number: 20030095434Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.Type: ApplicationFiled: November 21, 2002Publication date: May 22, 2003Inventors: Kenichi Kuroda, Toshifumi Takeda, Hisahiro Moriuchi, Masaki Shirai, Jiroh Sakaguchi, Akinori Matsuo, Shoji Yoshida
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Patent number: 6501689Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.Type: GrantFiled: October 25, 2001Date of Patent: December 31, 2002Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.Inventors: Kenichi Kuroda, Toshifumi Takeda, Hisahiro Moriuchi, Masaki Shirai, Jiroh Sakaguchi, Akinori Matsuo, Shoji Yoshida
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Publication number: 20020048204Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.Type: ApplicationFiled: October 25, 2001Publication date: April 25, 2002Inventors: Kenichi Kuroda, Toshifumi Takeda, Hisahiro Moriuchi, Masaki Shirai, Jiroh Sakaguchi, Akinori Matsuo, Shoji Yoshida
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Patent number: 6064606Abstract: A nonvolatile storage element of single-layer gate structure constructed by arranging a floating gate formed of a conductive layer to partly overlap with a control gate formed of a diffused layer is provided with a barrier layer covering a part or the whole of the surface of the floating gate. Such nonvolatile storage elements are used for redundancy control of defects or change of functions.Type: GrantFiled: December 31, 1997Date of Patent: May 16, 2000Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.Inventors: Kenichi Kuroda, Toshifumi Takeda, Hisahiro Moriuchi, Masaki Shirai, Jiroh Sakaguchi, Akinori Matsuo, Shoji Yoshida
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Patent number: 5767544Abstract: A nonvolatile storage element of single-layer gate structure constructed by arranging a floating gate formed of a conductive layer to partly overlap with a control gate formed of a diffused layer is provided with a barrier layer covering a part or the whole of the surface of the floating gate. Such nonvolatile storage elements are used for redundancy control of defects or change of functions.Type: GrantFiled: June 6, 1995Date of Patent: June 16, 1998Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.Inventors: Kenichi Kuroda, Toshifumi Takeda, Hisahiro Moriuchi, Masaki Shirai, Jiroh Sakaguchi, Akinori Matsuo, Shoji Yoshida
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Patent number: 5457335Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.Type: GrantFiled: July 9, 1991Date of Patent: October 10, 1995Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.Inventors: Kenichi Kuroda, Toshifumi Takeda, Hisahiro Moriuchi, Masaki Shirai, Jiroh Sakaguchi, Akinori Matsuo, Shoji Yoshida
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Patent number: 5392456Abstract: A method of controlling the time constant of a filter for use in a radio receiver which receives a signal, transmitted from a transmitting station at a predetermined period, intermittently at the predetermined period and demodulates and delivers the received signal, a filter circuit having the time constant control function based on the method, and a radio receiver having the filter circuit. Preferably, the filter has its time constant switchable stepwise and specifically, parallel connection of capacitors or shortcircuiting of resistors is controlled by turning on/off switches.Type: GrantFiled: October 3, 1990Date of Patent: February 21, 1995Assignees: Hitachi, Ltd., Kokusai Electric Co., Ltd.Inventors: Isamu Mitomo, Nobuo Tsukamoto, Arata Nakagoshi, Jiroh Sakaguchi, Kazuo Yamakido, Hiroshi Noguchi, Atushi Hoshi
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Patent number: 4454467Abstract: A reference voltage generator includes a first n-channel MISFET which has a p.sup.+ -type polycrystalline silicon gate electrode, and second and third n-channel MISFETs which have n.sup.+ -type polycrystalline silicon gate electrodes. The first MISFET has its gate and source coupled in common. The second MISFET has its gate coupled to the drain of the first MISFET, and has its source coupled to an output terminal. The third MISFET is supplied across its gate and source with a voltage which is delivered to the output terminal. First and second bias currents to be supplied to the first and second MISFETs respectively are made levels proportional to the drain current of the third MISFET. As a result, the output voltage of the output terminal is made a level which is substantially in agreement with the difference between the threshold voltages of the first and second MISFETs.Type: GrantFiled: July 19, 1982Date of Patent: June 12, 1984Assignee: Hitachi, Ltd.Inventor: Jiroh Sakaguchi
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Patent number: 4019070Abstract: An initial state-setting circuit wherein a malfunction preventing transistor is connected in series with an input transistor of a flip-flop, and is rendered conductive a short time after closure of a power supply switch. Even when noise arises immediately after the closure of the power supply, no malfunction due to the noise is induced, since the malfunction preventing transistor is not yet conductive.Type: GrantFiled: December 30, 1975Date of Patent: April 19, 1977Assignee: Hitachi, Ltd.Inventors: Jiroh Sakaguchi, Hiroto Kawagoe