Patents by Inventor Jitendra S. Goela

Jitendra S. Goela has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10392261
    Abstract: Low scatter water clear zinc sulfide with reduced metal contamination is prepared by cleaning an inert foil with an acid cleaning method and also cleaning zinc sulfide to reduce metal contamination. The zinc sulfide is wrapped in the inert foil and then treated by a HIP process to provide a water-clear zinc sulfide. The low scatter water-clear zinc sulfide may be used in articles such as windows and domes.
    Type: Grant
    Filed: April 13, 2012
    Date of Patent: August 27, 2019
    Inventors: Jitendra S. Goela, Nathaniel E. Brese
  • Patent number: 10062469
    Abstract: Articles with graphene are selectively transparent to electromagnetic radiation. The articles transmit electromagnetic radiation in the infrared and visible light bands while inhibiting incident radio frequency radiation. The articles have high electrical conductivity and may be used in windows and domes.
    Type: Grant
    Filed: July 2, 2012
    Date of Patent: August 28, 2018
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Jitendra S. Goela, Nathaniel E. Brese
  • Patent number: 9914996
    Abstract: The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: March 13, 2018
    Assignees: Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLC
    Inventors: Jitendra S. Goela, Hangyao Wang, Hua Bai, Michael A. Pickering
  • Patent number: 9863040
    Abstract: A method is directed to increasing the hardness of zinc sulfide. The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: January 9, 2018
    Assignees: Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLC
    Inventors: Jitendra S. Goela, Hangyao Wang, Hua Bai, Michael A. Pickering
  • Patent number: 9562286
    Abstract: The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: February 7, 2017
    Assignees: Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLC
    Inventors: Jitendra S. Goela, Hangyao Wang, Hua Bai, Michael A. Pickering
  • Publication number: 20170022368
    Abstract: The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.
    Type: Application
    Filed: October 6, 2016
    Publication date: January 26, 2017
    Inventors: Jitendra S. GOELA, Hangyao WANG, Hua BAI, Michael A. PICKERING
  • Patent number: 9490157
    Abstract: Semiconductor processing and equipment are disclosed. The semiconductor equipment and processing provide semiconductor wafers with reduced defects.
    Type: Grant
    Filed: March 31, 2009
    Date of Patent: November 8, 2016
    Assignee: TOKAI CARBON CO., LTD.
    Inventors: Jitendra S. Goela, Michael A. Pickering, James T. Fahey, Melinda S. Strickland
  • Publication number: 20160281220
    Abstract: The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.
    Type: Application
    Filed: June 10, 2016
    Publication date: September 29, 2016
    Inventors: Jitendra S. GOELA, Hangyao Wang, Hua Bai, Michael A. Pickering
  • Patent number: 9410238
    Abstract: Optical articles of zinc sulfide and zinc selenide with thick coatings of alumina are disclosed. The alumina coatings are deposited on the zinc sulfide and zinc selenide by a microwave assisted magnetron sputtering. In addition to alumina coatings, the optical articles may also include various polymer coatings.
    Type: Grant
    Filed: September 20, 2010
    Date of Patent: August 9, 2016
    Inventors: Jitendra S. Goela, Heather A. G. Stern
  • Publication number: 20160017486
    Abstract: The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.
    Type: Application
    Filed: September 26, 2014
    Publication date: January 21, 2016
    Inventors: Jitendra S. GOELA, Hangyao WANG, Hua BAI, Michael A. PICKERING
  • Patent number: 9228257
    Abstract: Low scatter water clear zinc sulfide with reduced metal contamination is prepared by coating a chuck which holds zinc sulfide and machining the zinc sulfide with uncoated particles. An inert foil is cleaned with an acid cleaning method and also cleaning the zinc sulfide. The zinc sulfide is wrapped in the inert foil and then treated by a HIP process to provide a low scatter water-clear zinc sulfide. The low scatter water-clear zinc sulfide may be used in articles such as windows and domes.
    Type: Grant
    Filed: April 13, 2012
    Date of Patent: January 5, 2016
    Assignee: ROHM AND HAAS COMPANY
    Inventors: Jitendra S. Goela, Nathaniel E. Brese
  • Patent number: 9200366
    Abstract: Methods of making polycrystalline monolithic magnesium aluminate spinels are disclosed. The polycrystalline monolithic magnesium aluminate spinels have small grain sizes and may be deposited on substrates as thick one-piece deposits. The polycrystalline monolithic magnesium aluminate spinels may be prepared and deposited by chemical vapor deposition using magnesium and aluminum gaseous precursors.
    Type: Grant
    Filed: December 8, 2011
    Date of Patent: December 1, 2015
    Inventors: Jitendra S. Goela, Heather A. G. Stern
  • Patent number: 8716824
    Abstract: An optical article and method of making the same are provided. The optical article has optical multi-aperture operation. The optical article has one or more electrically conductive and selectively passivated patterns.
    Type: Grant
    Filed: January 28, 2009
    Date of Patent: May 6, 2014
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Jitendra S. Goela, Michael A. Pickering, Neil D. Brown, Angelo Chirafisi, Mark Lefebvre, Jamie L. Triba
  • Patent number: 8613899
    Abstract: An apparatus includes a manifold with a chamber for mixing multiple reactants. Gases are jetted into the manifold by a plurality of inlet injectors. The inlet injectors are arranged such that the gases passing into the manifold impinge on each other at a common point to form a mixture. The mixture passes through a plurality of holes in one side of the manifold into a deposition chamber where the mixture of gases impinges on additional gases at a common point to provide a reaction resulting in deposition of solid materials in the deposition chamber. The solid materials are free-standing.
    Type: Grant
    Filed: April 17, 2012
    Date of Patent: December 24, 2013
    Assignees: Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLC
    Inventors: Heather A. G. Stern, Vincent DiFilippo, Jitendra S. Goela, Michael A. Pickering, Hua Bai, Debashis Chakraborty, Hangyao Wang
  • Publication number: 20130270356
    Abstract: An apparatus includes a manifold with a chamber for mixing multiple reactants. Gases are jetted into the manifold by a plurality of inlet injectors. The inlet injectors are arranged such that the gases passing into the manifold impinge on each other at a common point to form a mixture. The mixture passes through a plurality of holes in one side of the manifold into a deposition chamber where the mixture of gases impinges on additional gases at a common point to provide a reaction resulting in deposition of solid materials in the deposition chamber. The solid materials are free-standing.
    Type: Application
    Filed: April 17, 2012
    Publication date: October 17, 2013
    Applicants: Dow Globel Technologies LLC, Rohm and Haas Electronic Materials LLC
    Inventors: Heather A. G. Stern, Vincent DiFilippo, Jitendra S. Goela, Michael A. Pickering, Hua Bai, Debashis Chakraborty, Hangyao Wang
  • Publication number: 20130230707
    Abstract: Optical articles of zinc sulfide and zinc selenide with thick coatings of alumina are disclosed. The alumina coatings are deposited on the zinc sulfide and zinc selenide by a microwave assisted magnetron sputtering. In addition to alumina coatings, the optical articles may also include various polymer coatings.
    Type: Application
    Filed: September 20, 2010
    Publication date: September 5, 2013
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Jitendra S. GOELA, Heather A. G. STERN
  • Publication number: 20130171452
    Abstract: Articles with graphene are selectively transparent to electromagnetic radiation. The articles transmit electromagnetic radiation in the infrared and visible light bands while inhibiting incident radio frequency radiation. The articles have high electrical conductivity and may be used in windows and domes.
    Type: Application
    Filed: July 2, 2012
    Publication date: July 4, 2013
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Jitendra S. Goela, Nathaniel E. Brese
  • Publication number: 20120302141
    Abstract: Low scatter water clear zinc sulfide with reduced metal contamination is prepared by coating a chuck which holds zinc sulfide and machining the zinc sulfide with uncoated particles. An inert foil is cleaned with an acid cleaning method and also cleaning the zinc sulfide. The zinc sulfide is wrapped in the inert foil and then treated by a HIP process to provide a low scatter water-clear zinc sulfide. The low scatter water-clear zinc sulfide may be used in articles such as windows and domes.
    Type: Application
    Filed: April 13, 2012
    Publication date: November 29, 2012
    Applicant: Rohm and Haas Company
    Inventors: Jitendra S. GOELA, Nathaniel E. BRESE
  • Publication number: 20120272998
    Abstract: Low scatter water clear zinc sulfide with reduced metal contamination is prepared by cleaning an inert foil with an acid cleaning method and also cleaning zinc sulfide to reduce metal contamination. The zinc sulfide is wrapped in the inert foil and then treated by a HIP process to provide a water-clear zinc sulfide. The low scatter water-clear zinc sulfide may be used in articles such as windows and domes.
    Type: Application
    Filed: April 13, 2012
    Publication date: November 1, 2012
    Applicant: Rohm and Haas Company
    Inventors: Jitendra S. GOELA, Nathaniel E. BRESE
  • Patent number: 8202621
    Abstract: An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.
    Type: Grant
    Filed: October 24, 2001
    Date of Patent: June 19, 2012
    Assignee: Rohm and Haas Company
    Inventors: Michael A. Pickering, Jitendra S. Goela