Abstract: A battery comprises at least one battery cell on a support, the battery cell comprising a plurality of electrodes about an electrolyte, and having a surface. A thermoplastic material covers the surface of the battery cell, the thermoplastic material comprising a nitrogen permeability or oxygen permeability that is less than 20 cm3*mm/(m2*day). A cap covers the thermoplastic material.

Abstract: A phase change memory including a phase change layer, a first electrode, and a porous dielectric layer formed with a plurality of pores. The porous dielectric layer is formed between the phase change layer and the first electrode. Therefore, the phase change layer may make contact with the first electrode thorough the pores thereby decreasing the contact areas of the phase change layer and the first electrode.

Abstract: A phase change memory with adjustable resistance ratio is disclosed, which includes a phase change layer and an interfacial layer formed to be in contact with each other, and at least two electrodes in contact with the phase change layer and the interfacial layer respectively. The contact sections between the two electrodes and the phase change layer and the interfacial layer define a contact area respectively, wherein, the area defined by the contact section between the electrode and the phase change layer is larger than the area defined by the contact section between the electrode and the interfacial layer.

Abstract: A phase change memory including a phase change layer, a first electrode, and a porous dielectric layer formed with a plurality of pores. The porous dielectric layer is formed between the phase change layer and the first electrode. Therefore, the phase change layer may make contact with the first electrode thorough the pores thereby decreasing the contact areas of the phase change layer and the first electrode.

Abstract: Preparation of superconducting epitaxial film using the method of liquid phase epitaxial growth comprising the steps of:(1) melting the oxides of bismuth, calcium, strontium, and copper or the oxides of thallium, calcium, barium, and copper at temperature in the range of 900.degree. C. to 950.degree. C. to form a melt;(2) contacting the melt in (1) with magnesium oxide or mono crystalline materials;(3) lowering the temperature of the melt at a rate of 0.3.degree.-2.degree. C./min until the temperature is within the range of 820.degree. C. to 890.degree. C.;(4) separating the melt and the magnesium oxide substrate or mono crystalline material to obtain a superconducting epitaxial film; and(5) quenching said film in (4) until the temperature thereof is at room temperature, whereby a superconducting epitaxial film having a thickness of 40 to 150 .mu.m is obtained.