Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.

Abstract: Embodiments herein relate to systems, apparatuses, or processes directed to a package that includes a die, which may be a processor die, coupled with a first side of a substrate and one or more dies, which may be one or more memory dies, that are coupled with a second side of the substrate opposite the first side of the substrate. All or part of the memory dies may be directly below the die with respect to a plane of the substrate and may be partially or completely within a molding. Other embodiments may be described and/or claimed.

Abstract: Embodiments herein relate to systems, apparatuses, or processes for a connector for a modular memory package that includes one or more memory dies on a substrate, where the connector directly electrically couples electrical contacts at an edge and on each side the substrate of the memory package to electrical contacts at an edge and on each side of another substrate that includes a compute die. The connector may include a first plurality of leads that are substantially parallel with each other, and a second plurality of leads that are substantially parallel with each other that are below the first plurality of leads and electrically couple the two substrates. Other embodiments may be described and/or claimed.

Abstract: A semiconductor package is disclosed, which comprises a substrate, one or more dies on a first side of the substrate, and a plurality of interconnect structures having a first pitch and coupled to a second side of the substrate. The interconnect structures may attach the substrate to a board. The substrate may include a first interconnect layer having a second pitch. The first interconnect layer may be coupled to the one or more dies through second one or more interconnect layers. Third one or more interconnect layers between the first interconnect layer and the interconnect structures may translate the first pitch to the second pitch. The substrate may include a recess on a section of the second side of the substrate. The semiconductor package may further include one or more components within the recess and attached to the second side of the substrate.

Abstract: A semiconductor package is provided including: a package substrate with a top surface, wherein the top surface extends to a peripheral side surface of the package substrate; a stiffener with a lateral portion and a basket portion, wherein the lateral portion is positioned over the top surface of the package substrate and the basket portion overhangs from the top surface of the package substrate adjacent to the peripheral side surface of the package substrate; at least one semiconductor die positioned in the basket portion of the stiffener; and at least one wire attached to the at least one semiconductor die and extending out of the basket portion of the stiffener.

Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.

Abstract: A semiconductor package including a package substrate including a bottom surface; a first plurality of solder balls connected to the bottom surface of the package substrate; a second plurality of solder balls connected to a motherboard; and a shielding assembly interposed between the first and the second plurality of solder balls and configured to shield each solder ball of the first and second plurality of solder balls from electromagnetic interference.

Abstract: Embodiments disclosed herein include a printed circuit board (PCB). In an embodiment, the PCB comprises a substrate with a first surface and a second surface opposite from the first surface. In an embodiment, a first slot is through a thickness of the substrate, and a second slot is through the thickness of the substrate, where the first slot is parallel to the second slot. In an embodiment, a metal plate is provided on the PCB. In an embodiment the metal plate comprises a first portion over the first surface of the substrate between the first slot and the second slot, a second portion connected to the first portion, wherein the second portion is in the first slot, and a third portion connected to the first portion, wherein the third portion is in the second slot.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate, and a die coupled to the package substrate. In an embodiment, a stiffener is around the die and over the package substrate. In an embodiment, an electrically non-conductive underfill is around first level interconnects (FLIs) between the package substrate and the die. In an embodiment, an electrically conductive layer is around the non-conductive underfill.

Abstract: In accordance with disclosed embodiments, there are provided systems, methods, and apparatuses for implementing a Pad on Solder Mask (PoSM) semiconductor substrate package.

Abstract: An electronic system includes a first substrate including first solder bumps on a bottom surface, the first solder bumps having a first solder bump surface opposite from the bottom surface; a processor integrated circuit (IC) die including at least one processor mounted on a top surface of the first substrate; and a companion component to the processor IC. The companion component includes a second substrate, second solder bumps, and third solder bumps. The second solder bumps include a second solder bump surface, and the third solder bumps include a third solder bump surface at a different height than the second solder bump surface. The second solder bump surface contacts the top surface of the first substrate and the third solder bump surface is at a same height as the first solder bump surface.

Abstract: A molded frame interconnect includes power, ground and signal frame interconnects in a molded mass, that encloses an integrated-circuit package precursor, which is inserted into the frame, and coupled to the frame interconnects by a build-up redistribution layer.

Abstract: Methods and apparatus to reduce thickness of on-package memory architectures are disclosed. An on-package memory architecture includes a memory die; a bonding pad including a first surface and a second surface opposite the first surface; a wire bond electrically coupling the memory die to the first surface of the bonding pad; and a metal stub protruding from the second surface of the bonding pad. The metal stub is to electrically couple with a contact pad on a package substrate of an integrated circuit (IC) package.

Abstract: Embodiments include semiconductor packages and method of forming the semiconductor packages. A semiconductor package includes a package substrate on a substrate, a die on the package substrate, and a conductive stiffener over the package substrate and the substrate. The conductive stiffener surrounds the package substrate, where the conductive stiffener has a top portion and a plurality of sidewalls, and where the top portion is directly disposed on the package substrate, and the sidewalls are vertically disposed on the substrate. The semiconductor package also includes the substrate that has a plurality of conductive pads, where the conductive pads are conductively coupled to a ground source. The conductive stiffener may conductively couple the package substrate to the conductive pads of the substrate. The top portion may have a cavity that surrounds the die, where the top portion is directly disposed on a plurality of outer edges of the package substrate.

Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.

Abstract: Electronic device package on package (POP) technology is disclosed. A POP can comprise a first electronic device package including a heat source. The POP can also comprise a second electronic device package disposed on the first electronic device package. The second electronic device package can include a substrate having a heat transfer portion proximate the heat source that facilitates heat transfer from the heat source through a thickness of the substrate. The substrate can also have an electronic component portion at least partially about the heat transfer portion that facilitates electrical communication. In addition, the POP can comprise an electronic component operably coupled to the electronic component portion.

Abstract: Electronic device package stiffener and capacitor technology is disclosed. A combination stiffener and capacitor can include a structural material configured to be coupled to a substrate. The structural material can have a shape configured to provide mechanical support for the substrate. The combination stiffener and capacitor can also include first and second electrodes forming a capacitor. An electronic device package and a package substrate configured to receive the combination stiffener and capacitor are also disclosed.

Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.

Abstract: A semiconductor apparatus includes a floating-bridge interconnect that couples two semiconductive devices that are arranged across a middle semiconductive device. The floating-bridge interconnect can be semiconductive material such as a silicon bridge, or it can be an organic bridge. Computing functions required in one of the two semiconductive devices can be off-loaded to any of the floating-bridge interconnect or the other of the two semiconductive devices.

Abstract: A semiconductor package is disclosed, which comprises a substrate, one or more dies on a first side of the substrate, and a plurality of interconnect structures having a first pitch and coupled to a second side of the substrate. The interconnect structures may attach the substrate to a board. The substrate may include a first interconnect layer having a second pitch. The first interconnect layer may be coupled to the one or more dies through second one or more interconnect layers. Third one or more interconnect layers between the first interconnect layer and the interconnect structures may translate the first pitch to the second pitch. The substrate may include a recess on a section of the second side of the substrate. The semiconductor package may further include one or more components within the recess and attached to the second side of the substrate.