Patents by Inventor Jiun-Kai Huang

Jiun-Kai Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170182662
    Abstract: A robot safety guard system for installation in the ground around a robot with an operating range is disclosed to include a plurality of sensor modules mounted on the ground beyond the operating range of the robot. Each sensor module includes 2 first sensors each providing a first sensing range. The first sensing ranges of the first sensors of the sensor modules are combined to define a first warning area. One of the sensor modules further includes a second sensor that provides a second sensing range. The second sensing range defines a second warning area beyond the first warning area. In this way, the robot safety guard system is constructed having low construction costs, fast reaction time and space-saving.
    Type: Application
    Filed: December 2, 2016
    Publication date: June 29, 2017
    Inventors: Jiun-Kai HUANG, Po-Chiao HUANG, Chih-Hsuan CHEN, Tsung-Hsien CHIANG
  • Patent number: 9147020
    Abstract: A method includes simulating characteristics of a first transmission line having a first length, and simulating characteristics of a second transmission line having a second length greater than the first length. A calculation is then performed on the characteristics of the first transmission line and the characteristics of the second transmission line to generate intrinsic characteristics of a third transmission line having a length equal to a difference of the second length and the first length.
    Type: Grant
    Filed: April 21, 2011
    Date of Patent: September 29, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiu-Ying Cho, Jiun-Kai Huang, Wen-Sheh Huang, Chin-Wei Kuo, Min-Chie Jeng
  • Patent number: 8350586
    Abstract: Provided is a method of de-embedding. The method includes forming a test structure having a device-under-test embedded therein, the test structure having left and right pads coupling the device-under-test, the device-under-test dividing the test structure into left and right half structures, the left and right half structures each having intrinsic transmission parameters; forming a plurality of dummy test structures, each dummy test structure including a left pad and a right pad; measuring transmission parameters of the test structure and the dummy test structures; and deriving intrinsic transmission parameters of the device-under-test using the intrinsic transmission parameters of the left and right half structures and the transmission parameters of the test structure and the dummy test structures.
    Type: Grant
    Filed: July 2, 2009
    Date of Patent: January 8, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shu-Ying Cho, Jiun-Kai Huang, Wen-Sheh Huang, Sally Liu
  • Publication number: 20120267626
    Abstract: A method includes simulating characteristics of a first transmission line having a first length, and simulating characteristics of a second transmission line having a second length greater than the first length. A calculation is then performed on the characteristics of the first transmission line and the characteristics of the second transmission line to generate intrinsic characteristics of a third transmission line having a length equal to a difference of the second length and the first length.
    Type: Application
    Filed: April 21, 2011
    Publication date: October 25, 2012
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiu-Ying Cho, Jiun-Kai Huang, Wen-Sheh Huang, Chin-Wei Kuo, Min-Chie Jeng
  • Publication number: 20110001504
    Abstract: Provided is a method of de-embedding. The method includes forming a test structure having a device-under-test embedded therein, the test structure having left and right pads coupling the device-under-test, the device-under-test dividing the test structure into left and right half structures, the left and right half structures each having intrinsic transmission parameters; forming a plurality of dummy test structures, each dummy test structure including a left pad and a right pad; measuring transmission parameters of the test structure and the dummy test structures; and deriving intrinsic transmission parameters of the device-under-test using the intrinsic transmission parameters of the left and right half structures and the transmission parameters of the test structure and the dummy test structures.
    Type: Application
    Filed: July 2, 2009
    Publication date: January 6, 2011
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shu-Ying Cho, Jiun-Kai Huang, Wen-Sheh Huang, Sally Liu