Patents by Inventor Jiunn-Yih Chyan
Jiunn-Yih Chyan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10053797Abstract: A crystal growth apparatus includes a crucible, a heating device, a thermal insulation cover, and a driving device. The crucible contains materials to be melted, wherein the heating device heats the crucible to melt the materials; the thermal insulation cover is provided upon the materials, wherein the thermal insulation cover includes a main body, which has a bottom surface facing an interior of the crucible, and a insulating member being provided at the main body; the driving device moves the thermal insulation cover towards or away from the materials, whereby, the thermal insulation cover effectively blocks heat conduction and heat convection, which prevents thermal energy from escaping out of the crucible.Type: GrantFiled: March 31, 2015Date of Patent: August 21, 2018Assignee: GLOBALWAFERS CO., LTD.Inventors: Lu-Chung Chuang, Chih-Chieh Yu, Wen-Chieh Lan, I-Ching Li, Wen-Ching Hsu, Jiunn-Yih Chyan
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Patent number: 9708727Abstract: A stirring apparatus of an ingot casting furnace includes a rotating shaft and at least one fin. The fin is provided onto the rotating shaft, and has a first edge, a second edge of unequal length provided correspondingly, and a third edge connecting the first and the second edges. The rotating shaft can be driven to rotate, which consequently drives the at least one fin to stir materials in a crucible. The length of the first edge is different from that of the second edge in order for the materials in the crucible can be mixed with dopants more uniformly during the stirring process to produce ingots of stable quality.Type: GrantFiled: April 11, 2015Date of Patent: July 18, 2017Assignee: GLOBALWAFERS CO., LTD.Inventors: Lu-Chung Chuang, Chih-Chieh Yu, Wen-Chieh Lan, Jiunn-Yih Chyan, I-Ching Li, Wen-Ching Hsu
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Publication number: 20150299895Abstract: A stirring apparatus of an ingot casting furnace includes a rotating shaft and at least one fin. The fin is provided onto the rotating shaft, and has a first edge, a second edge of unequal length provided correspondingly, and a third edge connecting the first and the second edges. The rotating shaft can be driven to rotate, which consequently drives the at least one fin to stir materials in a crucible. The length of the first edge is different from that of the second edge in order for the materials in the crucible can be mixed with dopants more uniformly during the stirring process to produce ingots of stable quality.Type: ApplicationFiled: April 11, 2015Publication date: October 22, 2015Applicant: GLOBALWAFERS CO., LTD.Inventors: LU-CHUNG CHUANG, CHIH-CHIEH YU, WEN-CHIEH LAN, JIUNN-YIH CHYAN, I-CHING LI, WEN-CHING HSU
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Publication number: 20150284876Abstract: A crystal growth apparatus includes a crucible, a heating device, a thermal insulation cover, and a driving device. The crucible contains materials to be melted, wherein the heating device heats the crucible to melt the materials; the thermal insulation cover is provided upon the materials, wherein the thermal insulation cover includes a main body, which has a bottom surface facing an interior of the crucible, and a insulating member being provided at the main body; the driving device moves the thermal insulation cover towards or away from the materials, whereby, the thermal insulation cover effectively blocks heat conduction and heat convection, which prevents thermal energy from escaping out of the crucible.Type: ApplicationFiled: March 31, 2015Publication date: October 8, 2015Applicant: GLOBALWAFERS CO., LTD.Inventors: LU-CHUNG CHUANG, CHIH- CHIEH YU, WEN-CHIEH LAN, I-CHING LI, WEN-CHING HSU, JIUNN-YIH CHYAN
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Patent number: 9051664Abstract: The instant disclosure relates to a nanostructuring process for an ingot surface prior to the slicing operation. A surface treatment step is performed for at least one surface of the ingot in forming a nanostructure layer thereon. The nanostructure layer is capable of enhancing the mechanical strength of the ingot surface to reduce the chipping ratio of the wafer during slicing.Type: GrantFiled: January 19, 2012Date of Patent: June 9, 2015Assignee: Sino-American Silicon Products Inc.Inventors: Jiunn-Yih Chyan, Jian-Jhih Li, Kun-Lin Yang, Wen-Ching Hsu
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Publication number: 20140220301Abstract: The invention provides an epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, the crystalline substrate has an epitaxial surface which is nano-rugged and non-patterned. The epitaxial substrate according to the invention thereon benefits a compound semiconductor material in growth of epitaxy films with excellent quality. Moreover, the fabrication of the epitaxial substrate according to the invention has advantages of low cost and rapid production.Type: ApplicationFiled: April 11, 2014Publication date: August 7, 2014Inventors: Jiunn-Yih CHYAN, Jer-Liang YEH, Wen-Ching HSU, Suz-Hua HO
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Publication number: 20120193764Abstract: The instant disclosure relates to a nanostructuring process for an ingot surface prior to the slicing operation. A surface treatment step is performed for at least one surface of the ingot in forming a nanostructure layer thereon. The nanostructure layer is capable of enhancing the mechanical strength of the ingot surface to reduce the chipping ratio of the wafer during slicing.Type: ApplicationFiled: January 19, 2012Publication date: August 2, 2012Applicant: SINO-AMERICAN SILICON PRODUCTS INC.Inventors: Jiunn-Yih CHYAN, Jian-Jhih LI, Kun-Lin YANG, Wen-Ching HSU
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Patent number: 8203136Abstract: The invention provides an epitaxial substrate, a semiconductor light-emitting device using such epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, a crystal surface of the crystalline substrate thereon has a plurality of randomly arranged nanorods. The plurality of nanorods is formed of oxide of a material different from that forms the crystalline substrate.Type: GrantFiled: February 9, 2011Date of Patent: June 19, 2012Assignee: Sino-American Silicon Products Inc.Inventors: Jiunn-Yih Chyan, Hung-Chi Chien, Kun-Lin Yang, Wen-Ching Hsu
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Publication number: 20120112158Abstract: The invention provides an epitaxial substrate, a semiconductor light-emitting device using such epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, a crystal surface of the crystalline substrate thereon has a plurality of randomly arranged nanorods. The plurality of nanorods is formed of oxide of a material different from that forms the crystalline substrate.Type: ApplicationFiled: February 9, 2011Publication date: May 10, 2012Applicant: SINO-AMERICAN SILICON PRODUCTS INC.Inventors: Jiunn-Yih Chyan, Hung-Chi Chien, Kun-Lin Yang, Wen-Ching Hsu
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Publication number: 20120015143Abstract: The invention provides an epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, the crystalline substrate has an epitaxial surface which is nano-rugged and non-patterned. The epitaxial substrate according to the invention thereon benefits a compound semiconductor material in growth of epitaxy films with excellent quality. Moreover, the fabrication of the epitaxial substrate according to the invention has advantages of low cost and rapid production.Type: ApplicationFiled: June 22, 2011Publication date: January 19, 2012Applicant: Sino-American Silicon Products Inc.Inventors: Jiunn-Yih Chyan, Jer-Liang Yeh, Wen-Ching Hsu, Suz-Hua Ho
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Patent number: 8053853Abstract: An image sensor device includes a semiconductor substrate having a light-sensing region, and a first and second electrode embedded within the substrate. The first and second electrode forms an array of slits, the array of slits is configured to allow a wavelength of light to pass through to the light-sensing region. A method for making an image sensor device includes providing a semiconductor substrate, forming a plurality of pixels on the semiconductor substrate, and forming a plurality of slits embedded within each of the plurality of pixels. The plurality of slits is configured to allow a wavelength of light to pass through to each of the plurality of pixels.Type: GrantFiled: May 3, 2006Date of Patent: November 8, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jiunn-Yih Chyan, Gwo-Yuh Shiau, Chia-Shiung Tsai
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Publication number: 20070257283Abstract: An image sensor device includes a semiconductor substrate having a light-sensing region, and a first and second electrode embedded within the substrate. The first and second electrode forms an array of slits, the array of slits is configured to allow a wavelength of light to pass through to the light-sensing region. A method for making an image sensor device includes providing a semiconductor substrate, forming a plurality of pixels on the semiconductor substrate, and forming a plurality of slits embedded within each of the plurality of pixels. The plurality of slits is configured to allow a wavelength of light to pass through to each of the plurality of pixels.Type: ApplicationFiled: May 3, 2006Publication date: November 8, 2007Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jiunn-Yih Chyan, Gwo-Yuh Shiau, Chia-Shiung Tsai