Abstract: An electronic package comprising: an active element; a first substrate; and a second substrate, the first substrate comprising a plurality of conductive tracks on a first surface, the second substrate comprising a plurality of conductive tracks on a second surface, the active element being provided on the first surface of the first substrate, the second substrate being provided overlying the first surface of the first substrate such that a face of the second substrate which is opposite to the second surface is in contact with the first surface, the second substrate having an opening to allow access to the active element and being positioned on the first substrate such that at least some of the plurality of conductive tracks on the first surface are exposed, the active element being electrically connected to at least some of the plurality of tracks on the first substrate and the plurality of tracks on the second substrate.

Abstract: A photon source comprising: a quantum dot; and an optical cavity, the optical cavity comprising: a diffractive Bragg grating “DBG”; and a planar reflection layer, the DBG comprising a plurality of concentric reflective rings surrounding a central disk and at least one conductive track extending from the central disk across the plurality of concentric rings, the quantum dot being provided within the central disk and the planar reflection layer being provided on one side of the DBG to cause light to be preferentially emitted from the opposing side of the DBG.

Abstract: An optical device includes a first semiconductor substrate, a reference laser configured to generate coherent light, a plurality of first optical components, a plurality of second optical components, one or more first controllers configured to apply phase control signals to said plurality of first optical components to apply a phase shift, and one or more second controllers configured to apply pulse control signals to said plurality of second optical components such that a light pulse is outputted during a period of time that coherent light is received. The relative phase between emitted light pulses from the plurality of second optical components is controlled by the relative phase shifts applied by the one or more first controllers.

Abstract: An optical device, comprising: a first semiconductor substrate; a reference laser, configured to generate coherent light; a plurality of first optical components, wherein the reference laser is optically coupled to the plurality of first optical components, wherein each of the plurality of first optical components is configured to output coherent light during a period of time that coherent light from the reference laser is received; a plurality of second optical components, the second optical components configured to produce optical intensity modulation, wherein each of the plurality of first optical components is optically coupled to at least one corresponding second optical component; wherein the plurality of first optical components each comprises a laser, an optical amplifier or a phase modulator, and the plurality of second optical components each comprises a laser, an optical amplifier or an intensity modulator, and wherein when a first optical component comprises a laser or an optical amplifier the

Abstract: An optical device, comprising an optical component, configured to produce optical amplification; a component configured to intermittently supply coherent light to said optical component; and a controller, configured to apply a time varying signal to said optical component such that a plurality of light pulses are emitted during each period of time that said coherent light is received, wherein the plurality of light pulses emitted during each period have a fixed phase relation.

Abstract: An optical device comprising: a quantum dot, said quantum dot comprising InAs and adapted to emit radiation in the wavelength range from 1200 nm to 2000 nm; a supporting layer supporting said quantum dot, said supporting layer being lattice matched to InP; and wherein the longest dimension of the base of the quantum dot provided parallel to the supporting layer is within 20% of the shortest dimension of the base provided parallel to the supporting layer.

Abstract: An optical device comprising: a photonic crystal structure, comprising: a layer of a first material, the layer comprising a quantum emitter; and a plurality of regions of a second material in the layer of the first material, the regions arranged in a regular lattice having at least one region missing from the lattice so that a defect is formed, wherein the quantum emitter is located in the defect part of the photonic crystal structure; wherein the second material has a different refractive index to the first material; and an electrode which is electrically contacted to only the defect part of the photonic crystal structure.

Abstract: An interference system, comprising: an interference apparatus, configured such that input light pulses interfere at an interference component; wherein the input of said interference apparatus is provided by a phase-randomized light source, said phase-randomized light source comprising: at least one slave light source; at least one master light source configured to intermittently generate master light pulses such that the phase of each master light pulse has a random relationship to the phase of each subsequently generated master light pulse, further configured to supply said master light pulses to the slave light source; and a controller, configured to apply a time varying drive signal to said at least one slave light source such that just one slave light pulse is generated during each period of time for which a master light pulse is received, such that the phase of each slave light pulse has a random relationship to the phase of each subsequently generated slave light pulse.

Abstract: An optical device comprising: a substrate; a cavity structure on the substrate, comprising a quantum emitter in contact with one or more semiconductor layers; wherein the or all of the semiconductor layers in contact with the quantum emitter have a thickness larger than the height of the quantum emitter.

Abstract: An optical device comprising: a photonic crystal structure, comprising: a layer of a first material, the layer comprising a quantum emitter; and a plurality of regions of a second material in the layer of the first material, the regions arranged in a regular lattice having at least one region missing from the lattice so that a defect is formed, wherein the quantum emitter is located in the defect part of the photonic crystal structure; wherein the second material has a different refractive index to the first material; and an electrode which is electrically contacted to only the defect part of the photonic crystal structure.

Abstract: An optical device comprising: a substrate; a cavity structure on the substrate, comprising a quantum emitter in contact with one or more semiconductor layers; wherein the or all of the semiconductor layers in contact with the quantum emitter have a thickness larger than the height of the quantum emitter.

Abstract: An optical device comprising a quantum dot provided in a resonant confinement structure, an output from said confinement structure and a pulsed excitation source for said quantum dot, wherein the quantum dot is configured to allow the emission of photons having a first energy in response to a pulse from said excitation source, said resonant confinement structure providing optical confinement, the first energy being different to the resonant energy of the resonant confinement structure, the optical device further comprising a timing unit, said timing unit being configured to select photons which have been emitted from the quantum dot due to excitation by a pulse, the timing unit selecting photons emitted after the duration of the pulse which caused the emission of the photons.

Abstract: An interference system, comprising: an interference apparatus, configured such that input light pulses interfere at an interference component; wherein the input of said interference apparatus is provided by a phase-randomised light source, said phase-randomised light source comprising: at least one slave light source; at least one master light source configured to intermittently generate master light pulses such that the phase of each master light pulse has a random relationship to the phase of each subsequently generated master light pulse, further configured to supply said master light pulses to the slave light source; and a controller, configured to apply a time varying drive signal to said at least one slave light source such that just one slave light pulse is generated during each period of time for which a master light pulse is received, such that the phase of each slave light pulse has a random relationship to the phase of each subsequently generated slave light pulse.

Abstract: An optical device, comprising an optical component, configured to produce optical amplification; a component configured to intermittently supply coherent light to said optical component; and a controller, configured to apply a time varying signal to said optical component such that a plurality of light pulses are emitted during each period of time that said coherent light is received, wherein the plurality of light pulses emitted during each period have a fixed phase relation.

Abstract: A system for quantum teleportation of a quantum state of an input photon, including: a light emitting diode configured to produce a polarization entangled photon pair; a beam splitter configured to direct photons of the entangled photon pair along respective first and second paths; a measurement unit performing a joint measurement on the input photon; a timing unit configured to measure a first delay between the input photon and the photon of the entangled photon pair at a point of maximum indistinguishability of the photons as they pass through the joint measurement unit, and to measure a second delay between the two photons of the entangled photon pair as they exit the light emitting diode; a controller configured to determine a teleportation measurement is valid if the first delay is within a first predetermined timing window and the second delay is within a second predetermined timing window.

Abstract: An optical device comprising a quantum dot provided in a resonant confinement structure, an output from said confinement structure and a pulsed excitation source for said quantum dot, wherein the quantum dot is configured to allow the emission of photons having a first energy in response to a pulse from said excitation source, said resonant confinement structure providing optical confinement, the first energy being different to the resonant energy of the resonant confinement structure, the optical device further comprising a timing unit, said timing unit being configured to select photons which have been emitted from the quantum dot due to excitation by a pulse, the timing unit selecting photons emitted after the duration of the pulse which caused the emission of the photons.

Abstract: A semiconductor device includes a quantum dot and a plurality of layers, wherein said plurality of layers includes: a first layer; a stressor layer; and a patterned layer wherein said stressor layer overlies said first layer and said patterned layer overlies said stressor layer; wherein said stressor layer has a substantially different lattice constant to said first layer and said patterned layer and has a pit provided in said layer; said quantum dot lying above said patterned layer aligned with said pit.

Abstract: An optical component comprising an emitter and a solid reflector, said reflector having a convex outer surface, said emitter being located within the solid reflector, the emitter being configured to emit radiation via an electric dipole transition, the dipole having a dipole axis being orientated at an angle of 45 degrees or less to the surface normal at the apex of the reflector.

Abstract: A semiconductor device comprising a quantum dot and a plurality of layers, wherein said plurality of layers comprises: a first layer; a stressor layer; and a patterned layer wherein said stressor layer overlies said first layer and said patterned layer overlies said stressor layer; wherein said stressor layer has a substantially different lattice constant to said first layer and said patterned layer and has a pit provided in said layer; said quantum dot lying above said patterned layer aligned with said pit.