Patents by Inventor Joanne Yim
Joanne Yim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20200220033Abstract: A silicon-containing substrate including a top surface which comprises nanostructuring having a plurality of rounded depressions with depths greater than 20 nm.Type: ApplicationFiled: March 13, 2020Publication date: July 9, 2020Inventors: Joanne Yim, Jeffrey B. Miller, Michael Jura, Marcie R. Black, Joanne Forziati, Brian P. Murphy, Lauren Magliozzi
-
Patent number: 10629759Abstract: In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.Type: GrantFiled: December 11, 2017Date of Patent: April 21, 2020Assignee: Advanced Silicon Group, Inc.Inventors: Joanne Yim, Jeffrey B. Miller, Michael Jura, Marcie R. Black, Joanne Forziati, Brian P. Murphy, Lauren Magliozzi
-
Publication number: 20190221683Abstract: A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.Type: ApplicationFiled: March 20, 2019Publication date: July 18, 2019Inventors: Michael Jura, Marcie R. Black, Jeffrey B. Miller, Joanne Yim, Joanne Forziati, Brian P. Murphy, Richard Chleboski
-
Patent number: 10269995Abstract: A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.Type: GrantFiled: June 14, 2017Date of Patent: April 23, 2019Assignee: Advanced Silicon Group, Inc.Inventors: Michael Jura, Marcie R. Black, Jeffrey B. Miller, Joanne Yim, Joanne Forziati, Brian P. Murphy, Richard Chleboski
-
Patent number: 10079322Abstract: In an embodiment of the disclosure, a structure is provided which comprises a silicon substrate and a plurality of necklaces of silicon nanowires which are in direct physical contact with a surface of the silicon substrate, wherein the necklaces cover an area of the silicon substrate.Type: GrantFiled: February 24, 2017Date of Patent: September 18, 2018Assignee: Advanced Silicon Group, Inc.Inventors: Marcie R. Black, Jeffrey B. Miller, Michael Jura, Claire Kearns-McCoy, Joanne Yim, Brian P. Murphy
-
Publication number: 20180108791Abstract: In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.Type: ApplicationFiled: December 11, 2017Publication date: April 19, 2018Inventors: Joanne Yim, Jeffrey B. Miller, Michael Jura, Marcie R. Black, Joanne Forziati, Brian P. Murphy, Lauren Magliozzi
-
Patent number: 9911878Abstract: In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.Type: GrantFiled: August 27, 2014Date of Patent: March 6, 2018Assignee: Advanced Silicon Group, Inc.Inventors: Joanne Yim, Jeff Miller, Michael Jura, Marcie R. Black, Joanne Forziati, Brian Murphy, Lauren Magliozzi
-
Patent number: 9783895Abstract: In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal.Type: GrantFiled: July 11, 2016Date of Patent: October 10, 2017Assignee: Advanced Silicon Group, Inc.Inventors: Joanne Yim, Jeffrey B. Miller, Michael Jura, Marcie R. Black, Joanne Forziati, Brian P. Murphy, Adam Standley
-
Publication number: 20170278988Abstract: A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.Type: ApplicationFiled: June 14, 2017Publication date: September 28, 2017Inventors: Michael Jura, Marcie R. Black, Jeffrey B. Miller, Joanne Yim, Joanne Forziati, Brian P. Murphy, Richard Chleboski
-
Patent number: 9768331Abstract: A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.Type: GrantFiled: July 23, 2014Date of Patent: September 19, 2017Assignee: Advanced Silicon Group, Inc.Inventors: Michael Jura, Marcie R. Black, Jeffrey B. Miller, Joanne Yim, Joanne Forziati, Brian P. Murphy, Richard Chleboski
-
Publication number: 20170170346Abstract: In an embodiment of the disclosure, a structure is provided which comprises a silicon substrate and a plurality of necklaces of silicon nanowires which are in direct physical contact with a surface of the silicon substrate, wherein the necklaces cover an area of the silicon substrate.Type: ApplicationFiled: February 24, 2017Publication date: June 15, 2017Inventors: Marcie R. Black, Jeffrey B. Miller, Michael Jura, Claire Kearns-McCoy, Joanne Yim, Brian P. Murphy
-
Publication number: 20160319441Abstract: In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal.Type: ApplicationFiled: July 11, 2016Publication date: November 3, 2016Inventors: Joanne Yim, Jeffrey B. Miller, Michael Jura, Marcie R. Black, Joanne Forziati, Brian P. Murphy, Adam Standley
-
Patent number: 9449855Abstract: In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal.Type: GrantFiled: July 13, 2014Date of Patent: September 20, 2016Assignee: ADVANCED SILICON GROUP, INC.Inventors: Joanne Yim, Jeffrey B. Miller, Michael Jura, Marcie R. Black, Joanne Forziati, Brian P. Murphy, Adam Standley
-
Publication number: 20160218229Abstract: In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.Type: ApplicationFiled: August 27, 2014Publication date: July 28, 2016Inventors: Joanne YIM, Jeff MILLER, Michael JURA, Marcie R. BLACK, Joanne FORZIATI, Brian MURPHY, Lauren MAGLIOZZI
-
Publication number: 20150380583Abstract: In an embodiment of the disclosure, a structure is provided which comprises a silicon substrate and a plurality of necklaces of silicon nanowires which are in direct physical contact with a surface of the silicon substrate, wherein the necklaces cover an area of the silicon substrate.Type: ApplicationFiled: January 29, 2014Publication date: December 31, 2015Applicant: ADVANCED SILICON GROUP, INC.Inventors: Marcie R. Black, Jeff Miller, Michael Jura, Claire Kearns-McCoy, Joanne Yim, Brian P. Murphy
-
Publication number: 20150380740Abstract: In an aspect of this disclosure, a structure is provided comprising a metallic holding layer and an array of semiconductor nanowires. A portion of each semiconductor nanowire is embedded in the metallic holding layer. The embedded nanowires do not penetrate through the metallic holding layer. The metallic holding layer makes electrical contact to the semiconductor nanowires.Type: ApplicationFiled: December 18, 2013Publication date: December 31, 2015Inventors: Marcie R. Black, Michael Jura, Adam Standley, Joanne Yim, Jeff Miller, Brian Murphy
-
Publication number: 20150017802Abstract: In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal.Type: ApplicationFiled: July 13, 2014Publication date: January 15, 2015Applicant: Bandgap Engineering, Inc.Inventors: Joanne Yim, Jeff Miller, Michael Jura, Marcie R. Black, Joanne Forziati, Brian Murphy, Adam Standley
-
Publication number: 20140332068Abstract: A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700C, 750C, 800C, or 850C.Type: ApplicationFiled: July 23, 2014Publication date: November 13, 2014Applicant: BANDGAP ENGINEERING, INC.Inventors: Michael Jura, Marcie R. Black, Jeff Miller, Joanne Yim, Joanne Forziati, Brian Murphy, Richard Chleboski