Abstract: A 3-dimensional crystalline carbon material that is magnetic and metallic under ambient conditions is provided. The material, denominated U-carbon, has been synthesized using the molecular precursor, 3, 3-dimethyl-1-butene (C6H12). Depending on the atomic connections made between the carbon atoms of the material, U-Carbon forms structures that exhibit semiconducting and nonmagnetic to metallic and ferromagnetic behaviors. The use of selected molecular precursors (such as 3, 3-dimethyl-1-butene C6H12) that support crystal growth based on clustered rather than individual atoms is a paradigm shift in materials development. Rationally designed metastable materials with desirable properties, including U-Carbon, can have many scientific and technological applications.

Abstract: A family of discrete and uniformly sized silicon nanoparticles, including 1 (blue emitting), 1.67 (green emitting), 2.15 (yellow emitting), 2.9 (red emitting) and 3.7 nm (infrared emitting) nanoparticles, and a method that produces the family. The nanoparticles produced by the method of the invention are highly uniform in size. A very small percentage of significantly larger particles are produced, and such larger particles are easily filtered out. The method for producing the silicon nanoparticles of the invention utilizes a gradual advancing electrochemical etch of bulk silicon, e.g., a silicon wafer. The etch is conducted with use of an appropriate intermediate or low etch current density. An optimal current density for producing the family is ˜10 milli Ampere per square centimeter (10 mA/cm2). Higher current density favors 1 nm particles, and lower the larger particles.

Abstract: A silicon nanoparticle transistor and transistor memory device. The transistor of the invention has silicon nanoparticles, dimensioned on the order of 1 nm, in a gate area of a field effect transistor. The resulting transistor is a transistor in which single electron flow controls operation of the transistor. Room temperature operation is possible with the novel transistor structure by radiation assistance, with radiation being directed toward the silicon nanoparticles to create necessary holes in the quantum structure for the flow of an electron. The transistor of the invention also forms the basis for a memory device. The device is a flash memory device which will store electrical charge instead of magnetic effects.

Abstract: A method and apparatus for computing correlating images for image recognition is provided. In particular, the method is used to compare images of a biometric object to authorize an individual or verify whether an individual is the person he claims to be. The biometric objects may include fingerprints, hand or palm prints, and retina scans. The method uses a deviation of symmetry of correlation functions to determine whether the images are of a same object.

Abstract: Highly uniform 1 nm silicon nanoparticles are provided by the invention. The nanoparticles exhibit beneficial properties. They are a source of stimulated emissions. They may be suspended in liquids, and solids. They can be formed into crystals, colloids and films. The nanoparticles of the invention are about 1 nm having about only one part in one thousand greater than 1 nm. A method for producing the silicon nanoparticle of the invention is a gradual advancing electrochemical etch of bulk silicon. Separation of nanoparticles from the surface of the silicon may also be conducted. Once separated, various methods may be employed to form plural nanoparticles into colloids, crystals, films and other desirable forms. The particles may also be coated or doped.

Abstract: A family of discrete and uniformly sized silicon nanoparticles, including 1 (blue emitting), 1.67 (green emitting), 2.15 (yellow emitting), 2.9 (red emitting) and 3.7 nm (infrared emitting) nanoparticles, and a method that produces the family. The nanoparticles produced by the method of the invention are highly uniform in size. A very small percentage of significantly larger particles are produced, and such larger particles are easily filtered out. The method for producing the silicon nanoparticles of the invention utilizes a gradual advancing electrochemical etch of bulk silicon, e.g., a silicon wafer. The etch is conducted with use of an appropriate intermediate or low etch current density. An optimal current density for producing the family is ˜10 milli Ampere per square centimeter (10 mA/cm2). Higher current density favors 1 nm particles, and lower the larger particles.

Abstract: A family of discrete and uniformly sized silicon nanoparticles, including 1 (blue emitting), 1.67 (green emitting), 2.15 (yellow emitting), 2.9 (red emitting) and 3.7 nm (infrared emitting) nanoparticles, and a method that produces the family. The nanoparticles produced by the method of the invention are highly uniform in size. A very small percentage of significantly larger particles are produced, and such larger particles are easily filtered out. The method for producing the silicon nanoparticles of the invention utilizes a gradual advancing electrochemical etch of bulk silicon, e.g., a silicon wafer. The etch is conducted with use of an appropriate intermediate or low etch current density. An optimal current density for producing the family is ˜10 milli Ampere per square centimeter (10 mA/cm2). Higher current density favors 1 nm particles, and lower the larger particles.

Abstract: Highly uniform 1 nm silicon nanoparticles are provided by the invention. The nanoparticles exhibit beneficial properties. They are a source of stimulated emissions. They may be suspended in liquids, and solids. They can be formed into crystals, colloids and films. The nanoparticles of the invention are about 1 nm having about only one part in one thousand greater than 1 nm. A method for producing the silicon nanoparticle of the invention is a gradual advancing electrochemical etch of bulk silicon. Separation of nanoparticles from the surface of the silicon may also be conducted. Once separated, various methods may be employed to form plural nanoparticles into colloids, crystals, films and other desirable forms. The particles may also be coated or doped.

Abstract: A method for producing the silicon nanoparticle of the invention is a gradual advancing electrochemical etch of bulk silicon. Separation of nanoparticles from the surface of the silicon may also be conducted. Once separated, various methods may be employed to form nanoparticles into colloids, crystals, films and other desirable forms. The particles may also be coated or doped.

Abstract: A method and apparatus for computing correlating images for image recognition is provided. In particular, the method is used to compare images of a biometric object to authorize an individual or verify whether an individual is the person he claims to be. The biometric objects may include fingerprints, hand or palm prints, and retina scans. The method uses a deviation of symmetry of correlation functions to determine whether the images are of a same object.

Abstract: An electronic fast switch for operation at room temperature utilizing uniform silicon nanoparticles (˜1 nm with about 1 part per thousand exceeding 1 nm) between two conducting electrodes. The silicon nanoparticles, when on an n-type silicon substrate exhibit, at zero bias, a large differential conductance, approaching near full transparency. The conductance is observed after one of the electrode is first biased at a voltage in the range 3 to 5 eV (switching voltage), otherwise the device does not conduct (closed). A practical MOSFET switch of the invention includes the silicon nanoparticles in a body of the MOSFET, with the gate and substrate forming the two conducting electrodes. Electrodes may be realized by metal in other switches of the invention.

Abstract: A family of discrete and uniformly sized silicon nanoparticles, including 1 (blue emitting), 1.67 (green emitting), 2.15 (yellow emitting), 2.9 (red emitting) and 3.7 nm (infrared emitting) nanoparticles, and a method that produces the family. The nanoparticles produced by the method of the invention are highly uniform in size. A very small percentage of significantly larger particles are produced, and such larger particles are easily filtered out. The method for producing the silicon nanoparticles of the invention utilizes a gradual advancing electrochemical etch of bulk silicon, e.g., a silicon wafer. The etch is conducted with use of an appropriate intermediate or low etch current density. An optimal current density for producing the family is ˜10 milli Ampere per square centimeter (10 mA/cm2). Higher current density favors 1 nm particles, and lower the larger particles.