Patents by Inventor Johan Hendrik Klootwijk

Johan Hendrik Klootwijk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150301199
    Abstract: The present invention relates to a photon counting X-ray detector and detection method that effectively suppress polarization even under high flux conditions.
    Type: Application
    Filed: November 20, 2013
    Publication date: October 22, 2015
    Inventors: Antonius Johannes Maria NELLISSEN, Frank VERBAKEL, Johan Hendrik KLOOTWIJK, Herfried Karl WIECZOREK
  • Publication number: 20150293054
    Abstract: An integrated circuit (100) comprising a substrate (110); an insulating layer (120) over said substrate; and a first nanowire element (140a) and a second nanowire element (140b) adjacent to said first nanowire element on said insulating layer; wherein the first nanowire element is arranged to be exposed to a medium comprising an analyte of interest, and wherein the second nanowire element is shielded from said medium by a shielding layer (150) over said second nanowire element. A sensing apparatus including such an IC, a sensing method using such an IC and a method of manufacturing such an IC are also disclosed.
    Type: Application
    Filed: October 16, 2013
    Publication date: October 15, 2015
    Inventors: Johan Hendrik Klootwijk, Marleen Mescher, Manuel Eduardo Alarcon-Rivero, Nico Maris Adriaan De Wild
  • Publication number: 20150294663
    Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
    Type: Application
    Filed: November 6, 2013
    Publication date: October 15, 2015
    Inventors: Johan Hendrik Klootwijk, Marcel Mulder, Nico Maris Adriaan De Wild, Koray Karakaya, Cornelius Antonius Van Den Huevel
  • Publication number: 20150276667
    Abstract: Integrated circuit (100) sensor array, comprising a semiconductor substrate (110); an insulating layer (120) over said substrate; an first transistor (140a) on said insulating layer, the first transistor comprising an exposed functionalized channel region (146a) in between a source region (142a) and a drain region (144) for sensing an analyte in a medium; a second transistor (140b) on said insulating layer, the second transistor comprising an exposed channel region (146b) in between a source region (142b) and a drain region (144) for sensing a potential of said medium; and a voltage bias generator (150) conductively coupled to the semiconductor substrate for providing said transistors with a bias voltage, said voltage bias generator being responsive to the second transistor. A sensing apparatus comprising such an IC and an analyte measurement method using such an IC are also disclosed.
    Type: Application
    Filed: October 11, 2013
    Publication date: October 1, 2015
    Inventors: Johan Hendrik Klootwijk, Marleen Mescher, Pascal De Graaf, Bout Marcelis
  • Publication number: 20150276668
    Abstract: Integrated circuit (100) comprising a semiconductor substrate (110); an insulating layer (120) over said substrate; an first transistor (140) on said insulating layer, said first transistor comprising an exposed channel region (146) in between a source region (142a, 142b) and a drain region (144); and a voltage waveform generator (150) conductively coupled to the semiconductor substrate for providing the first transistor with a bias voltage during a signal acquisition period, wherein the voltage waveform generator is arranged to generate an alternating bias voltage waveform (300) comprising a periodically increasing amplitude. A sensing apparatus including such an integrated circuit and a sensing method using such an integrated circuit are also disclosed.
    Type: Application
    Filed: October 7, 2013
    Publication date: October 1, 2015
    Inventors: Johan Hendrik Klootwijk, Marleen Mescher, Manuel Eduardo Alarcon-Rivero, Nico Maris Adriaan De Wild
  • Publication number: 20150194556
    Abstract: A device for adaptable wavelength conversion and a device for energy conversion are described. The device for adaptable wavelength conversion comprises at least one layer comprising a wavelength converting material and arranged to receive and re-emit a light beam. the device is further arranged to manipulate the at least one layer to operate in a closed state, in which a surface of the at least one layer is substantially covered with the wavelength converting material and to operate in an open state, in which the surface of the at least one layer is substantially uncovered with the wavelength converting material. The device for adaptable wavelength conversion can be applied in combination with a solar cell or photovoltaic cell thereby enabling the solar cell to receive radiation having a suitable spectrum under varying lighting conditions.
    Type: Application
    Filed: March 20, 2015
    Publication date: July 9, 2015
    Inventors: ROGIER ADRIANUS HENRICA NIESSEN, WILLEM FRANKE PASVEER, JOHAN HENDRIK KLOOTWIJK
  • Publication number: 20150162852
    Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
    Type: Application
    Filed: February 18, 2015
    Publication date: June 11, 2015
    Inventors: PETER DIRKSEN, RUEDIGER MAUCZOK, KORAY KARAKAYA, JOHAN HENDRIK KLOOTWIJK, BOUT MARCELIS, MARCEL MULDER
  • Publication number: 20140375168
    Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
    Type: Application
    Filed: January 18, 2013
    Publication date: December 25, 2014
    Inventors: Peter Dirksen, Ruediger Mauczok, Koray Karakaya, Johan Hendrik KlooTwijk, Bout Marcelis, Marcel Mulder
  • Patent number: 8916940
    Abstract: A method of forming a dielectric layer on a further layer of a semiconductor device is disclosed. The method comprises depositing a dielectric precursor compound and a further precursor compound over the further layer, the dielectric precursor compound comprising a metal ion from the group consisting of Yttrium and the Lanthanide series elements, and the further precursor compound comprising a metal ion from the group consisting of group IV and group V metals; and chemically converting the dielectric precursor compound and the further precursor compound into a dielectric compound and a further compound respectively, the further compound self-assembling during said conversion into a plurality of nanocluster nuclei within the dielectric layer formed from the first dielectric precursor compound. The nanoclusters may be dielectric or metallic in nature. Consequently, a dielectric layer is formed that has excellent charge trapping capabilities.
    Type: Grant
    Filed: November 28, 2012
    Date of Patent: December 23, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jinesh Balakrishna Pillai Kochupurackal, Willem Frederik Adrianus Besling, Johan Hendrik Klootwijk, Robert Adrianus Maria Wolters, Freddy Roozeboom
  • Patent number: 8901703
    Abstract: The electronic device comprises a network of at least one thin-film capacitor and at least one inductor on a first side of a substrate of a semiconductor material. The substrate has a resistivity sufficiently high to limit electrical losses of the inductor and being provided with an electrically insulating surface layer on its first side. A first and a second lateral pin diode are defined in the substrate, each of the pin diodes having a doped p-region, a doped n-region and an intermediate intrinsic region. The intrinsic region of the first pin diode is larger than that of the second pin diode.
    Type: Grant
    Filed: May 3, 2005
    Date of Patent: December 2, 2014
    Assignee: NXP, B.V.
    Inventors: Arnoldus Den Dekker, Johannes Frederik Dijkhuis, Nicolas Jonathan Pulsford, Jozef Thomas Martinus Van Beek, Freddy Roozeboom, Antonius Lucien Adrianus Maria Kemmeren, Johan Hendrik Klootwijk, Maarten Dirk-Johan Nollen
  • Publication number: 20140174154
    Abstract: A method of selectively sensing the concentration of a target gas in polluted ambient air comprises the steps of: —providing a target gas sensor (220) sensitive to the target gas; —providing a first gas flow derived from the ambient air, from which first flow the target gas is substantially removed; —providing a second gas flow derived from the ambient air, substantially comprising the same target gas concentration as the ambient air; —exposing the target gas sensor to the first gas flow during a first time interval, and obtaining from the sensor a first output signal (Smf); —exposing the target gas sensor to the second gas flow during a second time interval not overlapping with the first time interval, and obtaining a second output signal (Smu); —calculating the difference (S?) between the first and the second output signals; calculating the concentration of the target gas from the calculated signal difference (S?).
    Type: Application
    Filed: July 9, 2012
    Publication date: June 26, 2014
    Applicant: KONINKLIJKE PHILIPS N.V.
    Inventors: Johan Marra, Johan Hendrik Klootwijk, Jacobus Bernardus Giesbers, Nico Maris Adriaan De Wild, Marcel Bulder, Rogie Adrianus Henrica Niessen, Peter Van Der Linde
  • Patent number: 8697516
    Abstract: A capacitor (110), wherein the capacitor (110) comprises a capacitor dielectric (112) comprising a dielectric matrix (114) of a first value of permittivity, and a plurality of nanoclusters (116) of a second value of permittivity which is larger than the first value of permittivity which are at least partially embedded in the dielectric matrix (114), wherein the plurality of nanoclusters (116) are formed in the dielectric matrix (114) by spontaneous nucleation.
    Type: Grant
    Filed: August 11, 2009
    Date of Patent: April 15, 2014
    Assignee: NXP, B.V.
    Inventors: Yukiko Furukawa, Jinesh Balakrishna Pillai Kochupurackal, Johan Hendrik Klootwijk, Frank Pasveer
  • Publication number: 20130120725
    Abstract: An imprint lithography method is disclosed for reducing a difference between an intended topography and an actual topography arising from a part of a patterned layer of fixed imprintable medium. The method involves imprinting an imprint lithography template into a layer of flowable imprintable medium to form a patterned layer in the imprintable medium, and fixing the imprintable medium to form a patterned layer of fixed imprintable medium. Local excitation is applied to the part of the patterned layer to adjust a chemical reaction in the part of the patterned layer to reduce the difference between the intended topography and the actual topography arising from the part of the fixed patterned layer of imprintable medium when this is subsequently used as a resist for patterning the substrate. An imprint medium suitable for imprint lithography with the method is also disclosed.
    Type: Application
    Filed: July 21, 2011
    Publication date: May 16, 2013
    Applicant: ASML Netherlands B.V.
    Inventors: Martinus Bernardus Van Der Mark, Vadim Yevgenyevich Banine, Andre Bernardus Jeunink, Johan Frederik Dijksman, Sander Frederik Wuister, Emiel Andreas Godefridus Peeters, Johan Hendrik Klootwijk, Roelof Koole, Christianus Martinus Van Heesch, Ruediger Guenter Mauczok, JAcobus Bernardus Giesbers
  • Patent number: 8395472
    Abstract: The present invention provides a means to integrate planar coils on silicon, while providing a high inductance. This high inductance is achieved through a special back- and front sided shielding of a material. In many applications, high-value inductors are a necessity. In particular, this holds for applications in power management. In these applications, the inductors are at least 5 of the order of 1 ?H, and must have an equivalent series resistance of less than 0.1?. For this reason, those inductors are always bulky components, of a typical size of 2×2×1 mm 3, which make a fully integrated solution impossible. On the other hand, integrated inductors, which can monolithically be integrated, do exist. However, these inductors suffer either from low inductance values, or 10 very-high DC resistance values.
    Type: Grant
    Filed: June 30, 2009
    Date of Patent: March 12, 2013
    Assignee: NXP B.V.
    Inventors: Freddy Roozeboom, Derk Reefman, Johan Hendrik Klootwijk, Lukas Frederik Tiemeijer, Jaap Ruigrok
  • Patent number: 8324117
    Abstract: A method of forming a dielectric layer on a further layer of a semiconductor device is disclosed. The method comprises depositing a dielectric precursor compound and a further precursor compound over the further layer, the dielectric precursor compound comprising a metal ion from the group consisting of Yttrium and the Lanthanide series elements, and the further precursor compound comprising a metal ion from the group consisting of group IV and group V metals; and chemically converting the dielectric precursor compound and the further precursor compound into a dielectric compound and a further compound respectively, the further compound self-assembling during said conversion into a plurality of nanocluster nuclei within the dielectric layer formed from the first dielectric precursor compound. The nanoclusters may be dielectric or metallic in nature. Consequently, a dielectric layer is formed that has excellent charge trapping capabilities.
    Type: Grant
    Filed: April 22, 2009
    Date of Patent: December 4, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jinesh Balakrishna Pillai Kochupurackal, Willem Frederik Adrianus Besling, Johan Hendrik Klootwijk, Robert Adrianus Maria Wolters, Freddy Roozeboom
  • Publication number: 20110272786
    Abstract: An energy storage device (300), the device (300) comprising a substrate (102), a steric structure (104) formed on and/or in a main surface (106) of the substrate (102), a current collector stack (202) formed on the steric structure (104), and an electric storage stack (302) formed on the current collector stack (202), wherein side walls (108) of the steric structure (104) and the main surface (106) of the substrate (102) enclose an acute angle of more than 80 degrees.
    Type: Application
    Filed: September 25, 2009
    Publication date: November 10, 2011
    Applicant: NXP B.V.
    Inventors: Willem Frederik Adrianus Besling, Rogier Adrianus Henrica Niessen, Johan Hendrik Klootwijk, Nynke Verhaegh, Petrus Henricus Laurentius Notten, Marcel Mulder
  • Publication number: 20110183186
    Abstract: The present invention relates to a method of manufacturing a solid-state battery with a high flexibility. The method comprises the steps of: forming an arrangement of battery cells (2) on a first substrate layer and providing a barrier layer (5) between the battery cells and the first substrate layer, applying on the arrangement of battery cells on the side not covered by the first substrate layer a second substrate layer (13), and removing the first substrate layer completely from the barrier layer, applying on the barrier layer a third substrate layer (14). The present invention further refers to the solid-state battery manufactured according to the method, as well as to a device, including the solid-state battery.
    Type: Application
    Filed: September 18, 2009
    Publication date: July 28, 2011
    Applicants: NXP B.V., KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Johan Hendrik Klootwijk, Rogier Adrianus Henrica Niessen, Petrus Henricus Laurentius Notten, Nynke Verhaegh, Willem Frederik Adrianus Besling
  • Publication number: 20110147891
    Abstract: A capacitor (110), wherein the capacitor (110) comprises a capacitor dielectric (112) comprising a dielectric matrix (114) of a first value of permittivity, and a plurality of nanoclusters (116) of a second value of permittivity which is larger than the first value of permittivity which are at least partially embedded in the dielectric matrix (114), wherein the plurality of nanoclusters (116) are formed in the dielectric matrix (114) by spontaneous nucleation.
    Type: Application
    Filed: August 11, 2009
    Publication date: June 23, 2011
    Applicant: NXP B.V.
    Inventors: Yukiko Furukawa, Jinesh Balakrishna Pillai Kochupurackal, Johan Hendrik Klootwijk, Frank Pasveer
  • Publication number: 20110128111
    Abstract: The present invention provides a means to integrate planar coils on silicon, while providing a high inductance. This high inductance is achieved through a special back- and front sided shielding of a material. In many applications, high-value inductors are a necessity. In particular, this holds for applications in power management. In these applications, the inductors are at least 5 of the order of 1 ?H, and must have an equivalent series resistance of less than 0.1 ?. For this reason, those inductors are always bulky components, of a typical size of 2×2×1 mm 3, which make a fully integrated solution impossible. On the other hand, integrated inductors, which can monolithically be integrated, do exist. However, these inductors suffer either from low inductance values, or 10 very-high DC resistance values.
    Type: Application
    Filed: June 30, 2009
    Publication date: June 2, 2011
    Applicant: NXP B.V.
    Inventors: Freddy Roozeboom, Derk Reefman, Johan Hendrik Klootwijk, Lukas Frederik Tiemeijer, Jaap Ruigrok
  • Publication number: 20110128727
    Abstract: An integrated device includes a Seebeck device (4) integrated in a substrate (2). A heat-generating device (6) warms up the Seebeck device (4) generating electrical power. The Seebeck device powers a further device which may be a micro-battery (8) likewise integrated in the substrate or a Peltier effect device for cooling another heat-generating device.
    Type: Application
    Filed: July 22, 2009
    Publication date: June 2, 2011
    Applicant: NXP B.V.
    Inventors: Jinesh Balakrishna Pillai Kochupurackal, Johan Hendrik Klootwijk