Patents by Inventor Johan Hendrik Klootwijk

Johan Hendrik Klootwijk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110108955
    Abstract: The present invention relates to a device (10) comprising a substrate (12) having a front surface (14) and a back surface (24); a semiconductor element (16) provided on the front surface of the substrate; a first passivation layer (18); and a second passivation layer (22) provided on the back surface of the substrate. The present invention also relates to a method of manufacturing such a device.
    Type: Application
    Filed: July 9, 2009
    Publication date: May 12, 2011
    Applicant: Koninklijke Philips Electronics N.V.
    Inventors: Johan Hendrik Klootwijk, Eugene Timmering
  • Publication number: 20110101471
    Abstract: A method of forming a dielectric layer on a further layer of a semiconductor device is disclosed. The method comprises depositing a dielectric precursor compound and a further precursor compound over the further layer, the dielectric precursor compound comprising a metal ion from the group consisting of Yttrium and the Lanthanide series elements, and the further precursor compound comprising a metal ion from the group consisting of group IV and group V metals; and chemically converting the dielectric precursor compound and the further precursor compound into a dielectric compound and a further compound respectively, the further compound self-assembling during said conversion into a plurality of nanocluster nuclei within the dielectric layer formed from the first dielectric precursor compound. The nanoclusters may be dielectric or metallic in nature. Consequently, a dielectric layer is formed that has excellent charge trapping capabilities.
    Type: Application
    Filed: April 22, 2009
    Publication date: May 5, 2011
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jinesh Balakrishna Pillai Kochupurackal, Willem Frederik Adrianus Besling, Johan Hendrik Klootwijk, Robert Adrianus Maria Wolters, Freddy Roozeboom
  • Publication number: 20110086246
    Abstract: The invention relates to a semiconductor device includes a substrate (1000; 2000), a solar cell (1910; 2910) formed on the substrate (1000; 2000) and a battery (1900; 2900) formed on the substrate, the battery comprising a plurality of trench batteries in a plurality of corresponding trenches (1400; 2400) in the substrate (1000; 2000). The solar cell can include a silicon solar cell (1910) comprising a plurality of p-n junctions for, during use, receiving incident light and converting at least part of the received incident light into an electrical current. Alternatively, the solar cell can include an electrochemical cell (2910) for, during use, receiving incident light and converting at least part of the received incident light into an electrical current. The invention further relates to a manufacturing method for a semiconductor device. The invention further relates to an apparatus comprising a semiconductor device.
    Type: Application
    Filed: June 8, 2009
    Publication date: April 14, 2011
    Applicants: NXP B.V., KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Yukiko Furukawa, Johan Hendrik Klootwijk
  • Patent number: 7791162
    Abstract: The present invention provides a trench isolation structure, comprising a trench groove (4) in a semiconductor slab (1) with a buried layer (2). The trench groove (4) is lined with first insulating material (5), then filled with a first filler material (6) up to the level of the buried layer. Then second insulating material (7), for example an oxide, is preferably applied in the volume which is surrounded by the buried layer (2). The remaining part of the trench groove (4) is either filled with second filler material (8) or with second insulating material. Said structure provides lower capacitive coupling between buried layer (2) edge and substrate (1), with improved thermal behavior. The invention furthermore provides a semiconductor assembly comprising said trench isolation structure and at least one semiconductor device, as well as a method for forming such a trench isolation structure.
    Type: Grant
    Filed: December 16, 2003
    Date of Patent: September 7, 2010
    Assignee: NXP B.V.
    Inventor: Johan Hendrik Klootwijk
  • Publication number: 20090170001
    Abstract: The invention relates to an electrochemical energy source comprising at least one assembly of: a first electrode, a second electrode, and an intermediate solid-state electrolyte separating said first electrode and said second electrode. The invention also relates to an electronic module provided with such an electrochemical energy source. The invention further relates to an electronic device provided with such an electrochemical energy source. Moreover, the invention relates to a method of manufacturing of such an electrochemical energy source.
    Type: Application
    Filed: November 25, 2005
    Publication date: July 2, 2009
    Applicant: Koninklijke Philips Electronics, N.V.
    Inventors: Freddy Roozeboom, Peter Motten, Antonius Lucien Adrianus Maria Kemmeren, Johan Hendrik Klootwijk
  • Publication number: 20080230802
    Abstract: A semiconductor device with a heterojunction. The device comprises a substrate and at least one nanostructure. The substrate and nanostructure is of different materials. The substrate may e.g. be of a group IV semiconductor material, whereas the nanostructure may be of a group III-V semiconductor material. The nanostructure is supported by and in epitaxial relationship with the substrate. A nanostructure may be the functional component of an electronic device such as a gate-around-transistor device. In an embodiment of a gate-around-transistor, a nanowire (51) is supported by a substrate (50), the substrate being the drain, the nanowire the current channel and a top metal contact (59) the source. A thin gate dielectric (54) is separating the nanowire and the gate electrode (55A, 55B).
    Type: Application
    Filed: December 13, 2004
    Publication date: September 25, 2008
    Inventors: Erik Petrus Antonius Maria Bakkers, Robertus Adrianus Maria Wolters, Johan Hendrik Klootwijk
  • Publication number: 20080095491
    Abstract: A monolithically integrated optical network device (20). The device comprises: a bipolar transistor (10) realized in a silicon substrate (11) that can be biased into an avalanche condition to emit photons; and a photonic bandgap (PBG) structure (22) monolithically integrated with the bipolar transistor (10) to act as an optical wave guide (16) for the photons generated by the bipolar transistor (10).
    Type: Application
    Filed: February 11, 2005
    Publication date: April 24, 2008
    Inventors: Johan Hendrik Klootwijk, Freddy Roozeboom
  • Patent number: 7352042
    Abstract: The invention relates to a radiation-emitting semiconductor device (10) with a semiconductor body (1) and a substrate (2), wherein the semiconductor body (1) comprises a vertical bipolar transistor with an emitter region (3), a base region (4) and a collector region (5), which regions are each provided with a connection region (6, 7, 8), and the border between the base region (4) and the collector region (5) forms a pn-junction and, in operation, at a reverse bias of the pn-junction or at a sufficiently large collector current, avalanche multiplication of charge carriers occurs whereby radiation is generated in the collector region (5). According to the invention, the collector region (5) has a thickness through which transmission of the generated radiation occurs, and the collector region (5) borders on a free surface of the semiconductor body (1).
    Type: Grant
    Filed: October 28, 2003
    Date of Patent: April 1, 2008
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Johan Hendrik Klootwijk, Jan Willem Slotboom
  • Patent number: 6908804
    Abstract: The bipolar transistor comprises a collector region (1) of a semiconductor material having a first doping type, a base region (2) of a semiconductor material having a second doping type, and an emitter region (3) having the first doping type. A junction is present between the emitter region (3) and the base region (2), and, viewed from the junction (4), a depletion region (5) extends into the emitter region (3). The emitter region (3) comprises a layer (6) of a first semiconductor material and a layer (7) of a second semiconductor material. The first semiconductor material has a higher intrinsic carrier concentration than the second semiconductor material. The layer (7) of said second semiconductor material is positioned outside the depletion region (5). The second semiconductor material has such a doping concentration that Auger recombination occurs. The invention also relates to a semiconductor device comprising such a bipolar transistor.
    Type: Grant
    Filed: August 27, 2003
    Date of Patent: June 21, 2005
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Hendrik Gezienus Albert Huizing, Jan Willem Slotboom, Doede Terpstra, Johan Hendrik Klootwijk, Eyup Aksen
  • Patent number: 6759696
    Abstract: The bipolar transistor comprises a collector region (1) of a semiconductor material having a first doping type, a base region (2) of a semiconductor material having a second doping type, and an emitter region (3) having the first doping type. A junction is present between the emitter region (3) and the base region (2), and, viewed from the junction (4), a depletion region (5) extends into the emitter region (3). The emitter region (3) comprises a layer (6) of a first semiconductor material and a layer (7) of a second semiconductor material. The first semiconductor material has a higher intrinsic carrier concentration than the second semiconductor material. The layer (7) of said second semiconductor material is positioned outside the depletion region (5). The second semiconductor material has such a doping concentration that Auger recombination occurs. The invention also relates to a semiconductor device comprising such a bipolar transistor.
    Type: Grant
    Filed: August 1, 2002
    Date of Patent: July 6, 2004
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Hendrik Gezienus Albert Huizing, Jan Willem Slotboom, Doede Terpstra, Johan Hendrik Klootwijk, Eyup Aksen
  • Publication number: 20040046187
    Abstract: The bipolar transistor comprises a collector region (1) of a semiconductor material having a first doping type, a base region (2) of a semiconductor material having a second doping type, and an emitter region (3) having the first doping type. A junction is present between the emitter region (3) and the base region (2), and, viewed from the junction (4), a depletion region (5) extends into the emitter region (3). The emitter region (3) comprises a layer (6) of a first semiconductor material and a layer (7) of a second semiconductor material.
    Type: Application
    Filed: August 27, 2003
    Publication date: March 11, 2004
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Hendrik Gezienus Albert Huizing, Jan Willern Slotboom, Doede Terpstra, Johan Hendrik Klootwijk, Eyup Aksen
  • Publication number: 20030054599
    Abstract: The bipolar transistor comprises a collector region (1) of a semiconductor material having a first doping type, a base region (2) of a semiconductor material having a second doping type, and an emitter region (3) having the first doping type. A junction is present between the emitter region (3) and the base region (2), and, viewed from the junction (4), a depletion region (5) extends into the emitter region (3). The emitter region (3) comprises a layer (6) of a first semiconductor material and a layer (7) of a second semiconductor material.
    Type: Application
    Filed: August 1, 2002
    Publication date: March 20, 2003
    Inventors: Hendrik Gezienus Albert Huizing, Jan Willem Slotboom, Doede Terpstra, Johan Hendrik Klootwijk, Eyup Aksen
  • Publication number: 20030030127
    Abstract: The bipolar transistor comprises a collector region (1) of a semiconductor material with a first doping type, an emitter region (2) with a first doping type, and a base region (3) of a semiconductor material with a second doping type, opposite to the first doping type, which base region is arranged between the emitter region (2) and the collector region (1), and a semiconductor area (4) extending between the collector region (1) and the base region (3).
    Type: Application
    Filed: August 2, 2002
    Publication date: February 13, 2003
    Inventors: Hendrik Gezienus Albert Huizing, Jan Willem Slotboom, Igor Lyuboshenko, Johan Hendrik Klootwijk, Freerk Van Rijs, Joost Melai