Patents by Inventor Johanes H. Sukamto

Johanes H. Sukamto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7727863
    Abstract: Sonic radiation is applied to a wafer portion of the planar surface of a rotating, tilted wafer as it is being immersed into a liquid treatment bath. The portion includes the leading outer edge region of the wafer. The area of the wafer portion is significantly less than the total surface area of the planar wafer surface. Power density is minimized. As a result, bubbles are removed from the wafer surface and cavitation in the liquid bath is avoided. In some embodiments, the liquid bath is de-gassed to inhibit bubble formation.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: June 1, 2010
    Assignee: Novellus Systems, Inc.
    Inventors: Bryan L. Buckalew, Jonathan D. Reid, Johanes H. Sukamto, Frederick Dean Wilmot, Richard S. Hill
  • Patent number: 7442267
    Abstract: A ruthenium-containing thin film is formed. Typically, the ruthenium-containing thin film has a thickness in a range of about from 1 nm to 20 nm. The ruthenium-containing thin film is annealed in an oxygen-free atmosphere, for example, in N2 forming gas, at a temperature in a range of about from 100° C. to 500° C. for a total time duration of about from 10 seconds to 1000 seconds. Thereafter, copper or other metal is deposited by electroplating or electroless plating onto the annealed ruthenium-containing thin film. In some embodiments, the ruthenium-containing thin film is also treated by UV radiation.
    Type: Grant
    Filed: November 29, 2004
    Date of Patent: October 28, 2008
    Assignee: Novellus Systems, Inc.
    Inventors: Eric G. Webb, Jonathan D. Reid, Seyang Park, Johanes H. Sukamto
  • Patent number: 7341946
    Abstract: Methods are provided for electrochemically depositing copper on a work piece. One method includes the step of depositing overlying the work piece a barrier layer having a surface and subjecting the barrier layer surface to a surface treatment adapted to facilitate deposition of copper on the barrier layer. Copper then is electrochemically deposited overlying the barrier layer.
    Type: Grant
    Filed: November 10, 2003
    Date of Patent: March 11, 2008
    Assignee: Novellus Systems, Inc.
    Inventors: Sridhar K. Kailasam, John Drewery, Jonathan D. Reid, Eric G. Webb, Johanes H. Sukamto
  • Publication number: 20020025449
    Abstract: The electroactive product of the present invention is a metal cyanide film on a substrate, wherein the improvement is the metal cyanide film having a flux throughput capacity greater than 0.54 millicoulombs/second-cm2 as measured by the specific cyclic voltammetry procedure. The improved metal cyanide film generally has a flux throughput capacity greater than that of unimproved metal cyanide film wherein the improved metal cyanide film was deposited at a slow rate. The present invention enjoys the advantages of greater cation equivalent loading capacity, and achieving ion separations using half the amount of electricity as other electrochemical ion separations.
    Type: Application
    Filed: August 17, 1999
    Publication date: February 28, 2002
    Inventors: JOHANES H. SUKAMTO, MARK F. BUEHLER, SCOT D. RASSAT, RICK J. ORTH, MICHAEL A. LILGA, RICHARD T. HALLEN