Abstract: A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.

Abstract: Processes, apparatus and systems for depositing a switching material that is switchable between conductivity states and where the states are persistent. The invention further relates to a microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.

Abstract: A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.

Abstract: A storage device including a storage medium for storing data in the form of topographic or magnetic marks. At least one probe is mounted on a common frame, the common frame and the storage medium designed for moving relative to each other for creating or detecting said marks. Each probe includes a tip facing the storage medium, a read sensing element, a write element and a capacitive platform, that forms a first electrode and is designed for a voltage potential applied to it independent from a control signal for said read sensing element and for said voltage potential applied to said capacitive platform being independent from a control signal for said write heating element. It further comprises a second electrode arranged in a fixed position relative to the storage medium forming a first capacitor together wherein said first electrode and a medium between the first and second electrode.

Abstract: The present invention relates to a memory cell comprising: a resistive structure; at least two electrodes coupled to the resistive structure, and at least one hydrogen reservoir structure, wherein the application of an electrical signal to one of the at least two electrodes causes the electrical resistance of the resistive structure to be modified by altering a hydrogen-ion concentration in the resistive structure.

Abstract: A storage device including a storage medium for storing data in the form of topographic or magnetic marks. At least one probe is mounted on a common frame, the common frame and the storage medium designed for moving relative to each other for creating or detecting said marks. Each probe includes a tip facing the storage medium, a read sensing element, a write element and a capacitive platform, that forms a first electrode and is designed for a voltage potential applied to it independent from a control signal for said read sensing element and for said voltage potential applied to said capacitive platform being independent from a control signal for said write heating element. It further comprises a second electrode arranged in a fixed position relative to the storage medium forming a first capacitor together wherein said first electrode and a medium between the first and second electrode.

Abstract: A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.

Abstract: A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.

Abstract: A storage device including a storage medium for storing data in the form of topographic or magnetic marks. At least one probe is mounted on a common frame, the common frame and the storage medium designed for moving relative to each other for creating or detecting said marks. Each probe includes a tip facing the storage medium, a read sensing element, a write element and a capacitive platform, that forms a first electrode and is designed for a voltage potential applied to it independent from a control signal for said read sensing element and for said voltage potential applied to said capacitive platform being independent from a control signal for said write heating element. It further comprises a second electrode arranged in a fixed position relative to the storage medium forming a first capacitor together wherein said first electrode and a medium between the first and second electrode.

Abstract: The present invention relates to a memory cell comprising: a resistive structure; at least two electrodes coupled to the resistive structure, and at least one hydrogen reservoir structure, wherein the application of an electrical signal to one of the at least two electrodes causes the electrical resistance of the resistive structure to be modified by altering a hydrogen-ion concentration in the resistive structure.

Abstract: This method for manufacturing lattice-matched substrates for high-T.sub.c superconductors employs at least two materials chosen from the group of known suitable substrate materials, of which one has a lattice constant smaller than the lattice constant(s) of the perovskite subcell of the selected superconductor material, while the other one has a lattice constant greater than the lattice constant of the perovskite subcell of the selected superconductor. These materials are then powdered and mixed intimately for providing a single-crystal either from the molten mixture of the chosen materials or by thin film deposition, said single-crystal containing appropriate molar percentages of the chosen materials so that resulting lattice constant is essentially the same as that of the selected superconductor material.

Abstract: Proposed is a method for operating a field-effect device comprised of a superconducting current channel having source and drain electrodes connected thereto, said superconducting current channel being separated from a gate electrode by an insulating layer, where the resistance of said current channel is controlled by varying the critical current of the superconducting material through the application of an electrical field across the superconducting current channel, which in turn changes the density of the mobile charge carriers in the superconducting material. Taught is also an inverted MISFET device for performing that method, the device being characterized in that on an electrically conductive substrate an insulating layer is provided which in turn carries a layer consisting of a superconducting material, and that a gate electrode is attached to said substrate, and source and drain electrodes are electrically connected to said superconductor layer.

Abstract: This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1) on top of the barrier layer (3). The superconductor layer (1) carries a pair of mutually spaced electrodes (4, 5) forming source and drain, respectively. The substrate is provided with an appropriate gate contact (6).The substrate (2) consists of a material belonging to the same crystallographic family as the barrier layer (3). In a preferred embodiment, the substrate (2) is niobium-doped strontium titanate, the barrier layer (3) is undoped strontium titanate, and the superconductor (1) is a thin film of a material having a lattice constant at least approximately similar to the one of the materials of the substrate (2) and barrier (3) layers. A preferred material of this type is YBa.sub.2 Cu.sub.3 O.sub.7-.delta., where 0.ltoreq..delta..ltoreq.0.5.

Abstract: This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1) on top of the barrier layer (3). The superconductor layer (1) carries a pair of mutually spaced electrodes (4, 5) forming source and drain, respectively. The substrate is provided with an appropriate gate contact (6).The substrate (2) consists of a material belonging to the same crystallographic family as the barrier layer (3). In a preferred embodiment, the substrate (2) is niobium-doped strontium titanate, the barrier layer (3) is undoped strontium titanate, and the superconductor (1) is a thin film of a material having a lattice constant at least approximately similar to the one of the materials of the substrate (2) and barrier (3) layers. A preferred material of this type is YBa.sub.2 Cu.sub.3 O.sub.7-.delta., where 0.ltoreq..delta..ltoreq.0.5.

Abstract: This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1) on top of the barrier layer (3). The superconductor layer (1) carries a pair of mutually spaced electrodes (4, 5) forming source and drain, respectively. The substrate is provided with an appropriate gate contact (6).The substrate (2) consists of a material belonging to the same crystallographic family as the barrier layer (3). In a preferred embodiment, the substrate (2) is niobium-doped strontium titanate, the barrier layer (3) is undoped strontium titanate, and the superconductor (1) is a thin film of a material having a lattice constant at least approximately similar to the one of the materials of the substrate (2) and barrier (3) layers. A preferred material of this type is YBa.sub.2 Cu.sub.3 O.sub.7-.delta., where 0 .cent..delta..ltoreq.0.5.

Abstract: An inverted MISFET structure with a high transition temperature superconducting channel comprises a gate substrate, an interfacial layer with one or more elements of the VIII or IB subgroup of the periodic table of elements, an insulating layer and a high transition temperature superconducting channel. An electric field, generated by a voltage applied to its gate alters the conductivity of the channel.

Abstract: An Auger electron microscope is equipped with a field-emission tip maintained at an essentially constant distance above the surface of the specimen. The tip may consist of a tungsten (100) whisker having a radius of .about.50 nm at the apex, the working distance being on the order of 1 mm. Auger electrons emitted from the surface of the specimen are collected by an electron energy analyzer for conventional processing. Mutual scanning displacement between the tip and specimen is obtained through use of an xyz-drive module, which is also responsible for adjusting the working distance of the tip. The entire microscope setup is mounted on vibration damping means and may be inserted into a vacuum system by means of an appropriate flange, if desired.

Abstract: This light waveguide consists of an optically transparent body cut at one end to a sharp tip and polished optically flat at the other end. A metallization layer on its surface is thick enough to be opaque. By pressing the waveguide against a rigid plate the metallization is plastically deformed so as to expose a tiny aperture at the tip of the body through which light can pass. By carefully controlling the deformation of the metallization the diameter of the aperture can be kept between 10 and 500 nm. The waveguide can be incorporated in a semiconductor laser of a read/write head used in an optical storage device.

Abstract: A vacuum transfer device includes a central processing chamber and a plurality of additional chambers radially positioned around the central chamber and in vacuum-tight connection therewith. A rotatable coulisse arrangement in the central chamber is extendable so as to reach into the additional chambers when correctly aligned. The device can transfer objects among several work stations without intermediate venting and re-evacuation of the system of chambers.

Abstract: The rotator comprises a piezoelectric bender (4) pivotally supported (2, 3) at one end and carrying a means for being clamped (6) to which a "payload" (7) may be attached. The bender (4) has split electrodes to keep its ends parallel when energized. Normally engaging the means for being clamped (6) are clamping members (15, 17) attached to a pair of piezoelectric benders (10, 11) which are fixed in supports (12, 13) resting on a base plate (1).With the pair of benders (10, 11) energized, the means for being clamped (6) is released and energization of the central bender (4) results in the lifting of the payload (7) by one step. The means for being clamped (6) is then re-arrested and its pivot (2, 3) released by means of actuating the ends of bimorphs (10, 11) associated with clamping members 14 and 16 and the central bender (4) is permitted to stretch. The rotator is then prepared for the next step of rotation about the pivot (2). This embodiment permits rotation through about 15 degrees.