Patents by Inventor Johannes J. M. Binsma

Johannes J. M. Binsma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5737352
    Abstract: The invention relates to a III-V laser (amplifier) with an active region (4A) which encloses a small angle with the end faces (50, 51), is separated therefrom by a preferably current-blocking cladding layer (5) and has a tapering end (40) of which a first side face (42) coincides with a side face (42) of the remainder of the strip-shaped active region (4A), while a second side face (43) thereof encloses an acute angle with the perpendicular to the end faces (50, 51). Such a laser has an amplification ripple, which is undesirable. In a laser according to the invention, the second side face (43) of the tapering portion (40) encloses an angle with the perpendicular to the end face (50, 51) which lies between 0.degree. and 30.degree., preferably between 0.degree. and 10.degree., and which is preferably approximately 0.degree.. The laser according to the invention has a particularly low reflection, as a result of which said amplification ripple is absent or at least very small.
    Type: Grant
    Filed: November 8, 1996
    Date of Patent: April 7, 1998
    Assignee: U.S. Philips Corporation
    Inventors: Lukas F. Tiemeijer, Johannes J. M. Binsma, Petrus J. A. Thijs
  • Patent number: 5472907
    Abstract: A method of manufacturing an optoelectronic semiconductor device includes the step of providing two comparatively thin layers next to one another on a substrate by means of a non-selective growing process, an etching process, and a selective growing process, a cladding layer being present over said thin layers. In the known method, first the one thin layer and the cladding layer are grown, the latter is locally removed, and the other thin layer and the cladding layer are then grown in that position. This method has the disadvantage that unevennesses (steps or openings) often arise at the surface of the layer structure above the transition between the thin layers.
    Type: Grant
    Filed: December 15, 1993
    Date of Patent: December 5, 1995
    Assignee: U.S. Philips Corporation
    Inventors: Johannes J. M. Binsma, Johannes M. M. Van Der Heijden
  • Patent number: 5399885
    Abstract: Optoelectronic semiconductor devices including a semiconductor body with a semiconductor substrate and a substantially plane semiconductor layer structure of III-V semiconductor materials situated thereon, a mesa being formed at a surface of the semiconductor body by means of selective deposition and forming part of an optoelectronic element, are important components in optical communication and optical disc systems or bar code readers. The optoelectronic element often is a semiconductor diode laser, but may alternatively be, for example, a radiation guide. A disadvantage of the known devices is that parasitic deposition takes place next to the mesa during the selective deposition. In addition, the device often contains so-called cleavage steps near the mesa. Another disadvantage is that the height and flatness of the upper side of the mesa are not accurately controllable.
    Type: Grant
    Filed: February 3, 1994
    Date of Patent: March 21, 1995
    Assignee: U.S. Philips Corporation
    Inventors: Petrus J. A. Thijs, Aart Van Leerdam, Johannes J. M. Binsma
  • Patent number: 5266518
    Abstract: In the method according to the invention, the upper and thicker of two semiconductor layers is etched by means of a selective and preferential etchant, substantially no underetching occurring with respect to the mask. Subsequently, the lower and thinner semiconductor layer and a part of the upper semiconductor layer are converted by a substantially non-selective anodic oxidation into semiconductor material oxides, which are removed by means of an etchant which is non-selective with respect to the oxides formed, but is selective with respect to the semiconductor materials. As a result, mesas are obtained having a substantially flat side wall, the lateral dimension of these mesas being accurately determined by the size of the mask. Thus, particularly favourable results are obtained, especially in the InP/InGaAsP material system. The method according to the invention can be used very advantageously when the thinner layer forms part of a so-called multilayer quantum well structure.
    Type: Grant
    Filed: August 29, 1990
    Date of Patent: November 30, 1993
    Assignee: U.S. Philips Corporation
    Inventors: Johannes J. M. Binsma, Rudolf P. Tijburg