Abstract: A method for changing a fuel cell system from a normal mode of operation over to a standby mode comprises the following steps: a) reducing the load withdrawal—via the electric circuit of the fuel cell stack—down to a load within the range from ?1% to +5% around a load with an optimal system efficiency, b) regulating down the anode pressure down via the anode supply system, c) in the meantime, maintaining and controlling the cathode gas feed via the cathode supply system so that the pressure differential between the anode spaces and the cathode spaces does not exceed a prescribed maximum pressure differential, d) switching off the cathode gas feed if the pressure differential between the anode spaces and of the fuel cell stack and the environment has reached the prescribed maximum pressure differential, and e) switching off the load withdrawal via the external electric circuit at the latest when a prescribed minimum limit voltage of the fuel cell stack has been reached.

Abstract: The invention relates to a method for manufacturing a microelectronic circuit. A substrate is provided. A source contact, a bulk contact and a drain contact are each produced for a transistor and for a memory transistor. In a respective common step, an insulating layer of the transistor and an insulating layer of the memory transistor as well as a metal layer of the transistor and a metal layer of the memory transistor are produced. At least one capacitor is produced as part of the memory transistor. Gate contacts connected to the metal layer of the transistor and connected to a metal layer of the capacitor of the memory transistor, respectively, are produced. Furthermore, the invention relates to a microelectronic circuit.

Abstract: An electrical machine includes a stator, a rotor comprising a shaft, and at least one heat-conducting element. The rotor is arranged at least partially inside the stator. The shaft includes at least one opening on at least one front side and an axis of rotation. The at least one opening extends in one direction along the axis of rotation of the shaft. The at least one heat-conducting element is arranged in the at least one opening of the shaft. The at least one heat-conducting element is at least partially made of a material having a thermal conductivity which is higher than a material of the shaft.

Abstract: An illustrative device disclosed herein includes a semiconductor substrate. The substrate includes a source region, a drain region and a channel region. The channel region is arranged between the source region and the drain region. A gate insulation layer is provided over the channel region. A floating gate electrode is provided over the gate insulation layer. A layer of a ferroelectric material is provided over the floating gate electrode. A top electrode is provided over the layer of ferroelectric material. A projected area of the top electrode onto a plane that is perpendicular to a thickness direction of the semiconductor substrate is smaller than a projected area of the floating gate electrode onto the plane.

Abstract: Suction belt conveyor of a rod-forming machine of the tobacco processing industry for conveying materials, in particular tobacco, a rod-forming machine of the tobacco processing industry and use of the rod-forming machine and a method for measuring material properties of a material rod of the tobacco processing industry. The suction belt conveyor includes at least one rod guiding channel, which is open at the bottom and which is delimited by two lateral channel sides and a suction belt along a conveying path. At least one electromagnetic measuring device is integrated in the channel sides of the suction belt conveyor at at least one position along the conveying path in order to determine properties of the conveyed material.

Abstract: A method disclosed herein includes providing a semiconductor structure, the semiconductor structure comprising a semiconductor substrate and a gate stack, the gate stack comprising a gate insulation material over the substrate, a floating gate electrode material over the gate insulation material, a ferroelectric transistor dielectric over the floating gate electrode material and a top electrode material over the ferroelectric transistor dielectric, performing a first patterning process to remove portions of the top electrode material and the ferroelectric transistor dielectric and performing a second patterning process after the first patterning process to remove portions of the floating gate electrode material and the gate insulation material, wherein a projected area of an upper portion of the gate structure onto a plane that is perpendicular to a thickness direction of the substrate is smaller than a projected area of the lower portion of the gate structure onto the plane.

Abstract: A flow meter records a flow rate and/or an amount of heat of a flowing fluid. A control and evaluation unit ascertains flow rate data and the fitting-dependent direction of through flow is automatically ascertained. A temperature measuring device has first and second temperature sensors for ascertaining a temperature difference between a feed temperature in the feed and a return temperature in the return. The fitting location of the first and second temperature sensors in the feed or the return is automatically ascertained by the control and evaluation unit on the basis of the temperature difference. The control and evaluation unit is automatically configured during first-time or re-installation of the flow meter such that the direction of flow through the meter is adapted to the fitted direction of through flow and/or the temperature sensors are assigned to the feed and the return, respectively.

Abstract: The invention relates to a method for switching off a fuel cell system (100) having a fuel cell stack (10), that has anode chambers (13) and cathode chambers (12), and a cathode supply (20) having a cathode supply path (21) for supplying an oxygenated cathode operating gas into the cathode chambers (12), a compressor (23) arranged in the cathode supply path(21) and a cathode exhaust path (22) for discharging a cathode exhaust gas from the cathode chambers (12). The method comprises the steps of: (a) Maintenance of the cathode chambers (12) under excess pressure while preventing a flow of cathode operating gas through the cathode chambers (12) while keeping the cathode operating gas that is present in the cathode chambers (12) oxygen-depleted; (b) Expansion of the oxygen-depleted cathode operating gas present in the cathode chambers (12) via the cathode supply path (31) [sic] and/or the cathode exhaust path (22), and (c) Separation of the cathode chambers (12) from the environment.

Abstract: The present invention relates to new aptamer molecules for use in the treatment and/or diagnosis of autoimmune diseases associated with autoantibodies against G-protein coupled receptors, a pharmaceutical composition comprising such aptamer molecules, an apheresis column comprising such aptamer molecules and a method for the determination of nucleotide sequences for use as sequences of aptamer molecules.

Abstract: The invention relates to a method for manufacturing a microelectronic circuit. A substrate is provided. A source contact, a bulk contact and a drain contact are each produced for a transistor and for a memory transistor. In a respective common step, an insulating layer of the transistor and an insulating layer of the memory transistor as well as a metal layer of the transistor and a metal layer of the memory transistor are produced. At least one capacitor is produced as part of the memory transistor. Gate contacts connected to the metal layer of the transistor and connected to a metal layer of the capacitor of the memory transistor, respectively, are produced. Furthermore, the invention relates to a microelectronic circuit.

Abstract: A method for data transmission, between measuring apparatuses (5) and a data processing device (3, 3?) in a measured data recording system (1, 1?) with a controller (7, 7?), includes repeated execution of exchange steps by the controller. The exchange steps include reception of analog measured signals from the measuring apparatuses (5) and/or the digital exchange of digital messages between the measuring apparatuses and the controller (7, 7?). The exchange steps are started with a predefined time lag. A digital data packet is sent by the data processing device (3, 3?) to the controller. The digital data packet contains the code of one of the plurality of measuring apparatuses (5) and a digital message. The controller extracts the code from the digital data packet by the controller (7, 7?) and sends the digital message to the one of the plurality of measuring apparatuses, after the completion of the digital exchange.

Abstract: An illustrative method disclosed herein includes providing a semiconductor structure. The semiconductor structure includes a first interlayer dielectric provided over a semiconductor substrate. A first electrode of a first capacitor is formed over the first interlayer dielectric. A layer of first dielectric material is deposited over the first electrode of the first capacitor and the first interlayer dielectric. A layer of electrically conductive material is deposited over the layer of first dielectric material. A second electrode of the first capacitor and a first electrode of the second capacitor are formed from the layer of electrically conductive material. After the formation of the second electrode of the first capacitor and the first electrode of the second capacitor, a layer of second dielectric material is deposited and a second electrode of the second capacitor is formed over the layer of second dielectric material.

Abstract: A method for data transmission, between measuring apparatuses (5) and a data processing device (3, 3?) in a measured data recording system (1, 1?) with a controller (7, 7?), includes repeated execution of exchange steps by the controller. The exchange steps include reception of analog measured signals from the measuring apparatuses (5) and/or the digital exchange of digital messages between the measuring apparatuses and the controller (7, 7?). The exchange steps are started with a predefined time lag. A digital data packet is sent by the data processing device (3, 3?) to the controller. The digital data packet contains the code of one of the plurality of measuring apparatuses (5) and a digital message. The controller extracts the code from the digital data packet by the controller (7, 7?) and sends the digital message to the one of the plurality of measuring apparatuses, after the completion of the digital exchange.

Abstract: In various embodiments, a method for producing an electronic component is provided. The method includes applying an adhesive layer to a carrier, initially curing the adhesive layer applied to the carrier, providing a chip, wherein the chip has a substrate and a layer sequence arranged on the substrate, laying the chip onto the initially cured adhesive layer by way of a top side of the layer sequence, embedding the chip into a shaped body, wherein the top side of the layer sequence and a first side of the shaped body lie substantially in a plane, separating the embedded chip from the adhesive layer and the carrier, and applying an electrically conductive structure to the first side of the shaped body, the shaped body forming a vertical electrical insulation between the electrically conductive structure and the substrate.

Abstract: A method disclosed herein includes providing a semiconductor structure, the semiconductor structure comprising a semiconductor substrate and a gate stack, the gate stack comprising a gate insulation material over the substrate, a floating gate electrode material over the gate insulation material, a ferroelectric transistor dielectric over the floating gate electrode material and a top electrode material over the ferroelectric transistor dielectric, performing a first patterning process to remove portions of the top electrode material and the ferroelectric transistor dielectric and performing a second patterning process after the first patterning process to remove portions of the floating gate electrode material and the gate insulation material, wherein a projected area of an upper portion of the gate structure onto a plane that is perpendicular to a thickness direction of the substrate is smaller than a projected area of the lower portion of the gate structure onto the plane.

Abstract: A flow meter records a flow rate and/or an amount of heat of a flowing fluid. A control and evaluation unit ascertains flow rate data and the fitting-dependent direction of through flow is automatically ascertained. A temperature measuring device has first and second temperature sensors for ascertaining a temperature difference between a feed temperature in the feed and a return temperature in the return. The fitting location of the first and second temperature sensors in the feed or the return is automatically ascertained by the control and evaluation unit on the basis of the temperature difference. The control and evaluation unit is automatically configured during first-time or re-installation of the flow meter such that the direction of flow through the meter is adapted to the fitted direction of through flow and/or the temperature sensors are assigned to the feed and the return, respectively.

Abstract: A method for changing a fuel cell system from a normal mode of operation over to a standby mode comprises the following steps: a) reducing the load withdrawal—via the electric circuit of the fuel cell stack—down to a load within the range from ?1% to +5% around a load with an optimal system efficiency, b) regulating down the anode pressure down via the anode supply system, c) in the meantime, maintaining and controlling the cathode gas feed via the cathode supply system so that the pressure differential between the anode spaces and the cathode spaces does not exceed a prescribed maximum pressure differential, d) switching off the cathode gas feed if the pressure differential between the anode spaces and of the fuel cell stack and the environment has reached the prescribed maximum pressure differential, and e) switching off the load withdrawal via the external electric circuit at the latest when a prescribed minimum limit voltage of the fuel cell stack has been reached.

Abstract: A rotary vacuum pump, for instance a vane pump, has at least one circumferential groove (6) between facing side surfaces of the rotor (2) and of the rotor guide (3) for receiving a lubricating and sealing fluid. The circumferential groove (6) is a partial annular groove, which has an angular extension of less than 360° and has at least one interruption enabling creating a hydrodynamic fluid bearing in a region opposite a discharge region of the pump (1; 101; 121; 201), over the whole axial extension of the facing surfaces. A method of lubricating a rotary vacuum pump is also provided.

Abstract: Nonvolatile storage with long memory endurance having the advantages of easy manufacturability is obtained by using a memory cell having an information storage element including a ferroelectric material, and operating the memory cell in a volatile operating mode and a nonvolatile operating mode. The option of operating the memory cell in the volatile operating mode enables the associated advantages of high memory speed at long endurance, wherein, however, the option of operating the memory cell in the nonvolatile operating mode can bridge gaps in the power supply.

Abstract: The present disclosure provides integrated circuit elements and MIM/MIS capacitors having high capacitance and methods of forming according integrated circuit elements and integrated MIM/MIS capacitors and methods of controlling an integrated circuit element and an integrated MIM/MIS capacitor. In various aspects, a substrate is provided and a dielectric layer or insulating layer is formed over the substrate. Furthermore, an electrode layer is disposed over the dielectric layer or insulating layer. Herein, the dielectric layer or insulating layer is in an antiferroelectric phase. In various illustrative embodiments, the integrated circuit element may implement a MOSFET structure or a capacitor structure.