Abstract: Workpieces, such as semiconductor wafers, are electroplated with improved thickness uniformity by providing a diffuser member intermediate the cathode and anode of a fountain-type electroplating apparatus. The diffuser or member has a pattern of openings specifically designed to prevent channeling and/or selective directing of electrolyte towards the workpiece. In one embodiment, the diffuser member comprises a spiral-shaped pattern of openings originating at the center of the diffuser member and extending to the periphery thereof.

Abstract: A method for manufacturing an integrated circuit using damascene processes is provided in which planar surfaces subjected to chemical-mechanical polishing are protected by a protective low dielectric constant coating. The coatings are of organic silicon materials which are spun on and baked in preparation of the deposition of subsequent dielectric layers.

Abstract: A method is provided for forming metal layers in semiconductor channels or vias by using a very high pressure ionized metal deposition technique which results in improved sidewall step coverage with enhanced subsequent filling of the channel or vias by conductive materials. To obtain the very high pressure in excess of 100 mT, the plasma coil power is increased and the gas flow is increased while maintaining a constant pumping feed in the ionized metal deposition equipment.

Abstract: A method for depositing conductive material inside openings within an integrated circuit uses chemical solution deposition. The method includes applying the integrated circuit having the openings with a metalorganic decomposition precursor. The metalorganic decomposition precursor on the integrated circuit is pyrolyzed in a reducing ambient to form a layer of conductive material. For example, if the reducing ambient includes one of hydrogen gas, or a hydrogen and nitrogen gas mix, reactive hydrogen, or ultra high vacuum substantially devoid of oxygen, a conductive layer of metal forms from pyrolyzing the metalorganic decomposition precursor in such a reducing ambient. If the reducing ambient includes reactive nitrogen, a conductive layer of metal nitride forms from pyrolyzing the metalorganic decomposition precursor in such a reducing ambient.

Abstract: Borderless vias are filled by initially depositing a thin, conformal layer of titanium nitride by chemical vapor deposition to cover an undercut, etched side surface of a lower metal feature. A metal, such as tungsten, is subsequently deposited to fill the borderless via. Embodiments include thermal decomposition of an organic-titanium compound, such as tetrakis-dimethylamino titanium, and treating the deposited titanium nitride in an H.sub.2 /N.sub.2 plasma to lower its resistivity.

Abstract: The present semiconductor device and method of fabrication thereof includes the provision of a trench or via hole in a dielectric, with a barrier layer thereon extending into the trench or via hole. A layer of titanium is provided over the barrier layer, also extending into the trench or via hole, and aluminum or aluminum alloy is provided over the titanium layer. The barrier layer provides good conformal coverage while also preventing outgassing of the dielectric from adversely affecting the conductor. The barrier layer also serves as a wetting agent for the deposition and flowing of aluminum or aluminum alloy. The titanium layer can be extremely thin, or non-existent, so as to avoid significant growth of TiAl.sub.3 and the problems attendant thereto.

Abstract: A low-resistance metal-semiconductor contact for use in integrated circuits includes a titanium silicide layer overlaying a semiconductor body. The top surface of the titanium silicide layer is a combination of silicides and titanium nitride formed by exposing the top surface to a nitrogen plasma. This combination surface is covered by a layer of titanium nitride, which is in turn covered by a layer of conductive metal, such as tungsten.

Abstract: A low-resistance contact for use in integrated circuits is formed by creating a titanium silicide layer on a semiconductor body and treating the titanium silicide layer with active free nitrogen to form a surface comprised of titanium nitride. This titanium nitride surface is then overlaid with an additional deposition of titanium nitride. Finally, a layer of conductive metal, such as tungsten, is formed over the second titanium nitride layer by chemical vapor deposition. This process eliminates the need for a titanium-metal deposition step and the defects associated with potential reactions between tungsten hexafluoride gas and titanium metal.