Abstract: A method of p-type doping cadmium telluride (CdTe) is disclosed. The method comprising the steps of, (a) providing a first component comprising cadmium telluride (CdTe) comprising an interfacial region, and (b) subjecting the CdTe to a functionalizing treatment to obtain p-type doped CdTe, said functionalizing treatment comprising a thermal treatment of at least a portion of the interfacial region in the presence of a first material comprising a p-type dopant, and of a second material comprising a halogen. A method of making a photovoltaic cell is also disclosed.

Abstract: A method of p-type doping cadmium telluride (CdTe) is disclosed. The method comprising the steps of, (a) providing a first component comprising cadmium telluride (CdTe) comprising an interfacial region, and (b) subjecting the CdTe to a functionalizing treatment to obtain p-type doped CdTe, said functionalizing treatment comprising a thermal treatment of at least a portion of the interfacial region in the presence of a first material comprising a p-type dopant, and of a second material comprising a halogen. A method of making a photovoltaic cell is also disclosed.

Abstract: A method of p-type doping cadmium telluride (CdTe) is disclosed. The method comprising the steps of, (a) providing a first component comprising cadmium telluride (CdTe) comprising an interfacial region, and (b) subjecting the CdTe to a functionalizing treatment to obtain p-type doped CdTe, said functionalizing treatment comprising a thermal treatment of at least a portion of the interfacial region in the presence of a first material comprising a p-type dopant, and of a second material comprising a halogen. A method of making a photovoltaic cell is also disclosed.

Abstract: The present invention provides method of scribing a multilayer panel. The method comprises (a) providing a multilayer panel comprising a substrate layer, a transparent conductive layer disposed thereupon, a first semiconducting layer disposed upon the transparent conductive layer; (b) configuring the multilayer panel relative to a laser machining device, the machining device comprising a laser head and an optical sensor; (c) inducing a motion of the laser head relative to the multilayer panel such that a laser beam contacts the panel along a transverse line across the panel, the laser beam incident upon the panel having sufficient energy to ablate one or more layers of the multilayer panel within a zone irradiated by the laser beam irradiated to provide a scribed panel; (d) simultaneously irradiating the scribed panel with a first light source; and (e) detecting the light emerging from the scribed panel at the optical sensor in real time. Also provided is a system for scribing a multilayer panel.

Abstract: A method of p-type doping cadmium telluride (CdTe) is disclosed. The method comprising the steps of, (a) providing a first component comprising cadmium telluride (CdTe) comprising an interfacial region, and (b) subjecting the CdTe to a functionalizing treatment to obtain p-type doped CdTe, said functionalizing treatment comprising a thermal treatment of at least a portion of the interfacial region in the presence of a first material comprising a p-type dopant, and of a second material comprising a halogen. A method of making a photovoltaic cell is also disclosed.

Abstract: A system for depositing two or more materials on a substrate is provided. The system comprises one or more susceptors configured to define two or more recesses for accommodating at least a first material and a second material respectively. The first and second materials are different. The system further comprises one or more heaters for heating the first material and the second material for sublimation of the first and second materials for deposition on the substrate. A method for depositing two or more materials on a substrate is also presented.

Abstract: An electron emissive material includes a composition including a metal oxide, where the metal oxide is at least one oxide of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, Sc, Hf, or Zr, or any combinations thereof, where the metal oxide is present in a quantity that ranges from about 20% to 100% by weight of the total composition, where the composition is operable to emit electrons in a discharge medium in response to a thermal excitation, wherein the discharge medium under steady state operating conditions producing a total vapor pressure of less than about 2×105 Pa. A lamp including an envelope, an electrode including an electron emissive material and a discharge medium, is also disclosed.

Abstract: An exemplary embodiment of the invention is a method and apparatus for calculating at least one confidence interval. The method comprises activating a calculator. The calculator prompts the user to enter at least three pairs of calibration data. The user then specifies a reference for the calibration data. The calculator then generates a list of the calibration data. The calculator then calculates a linear calibration curve derived from the calibration data. The calculator then calculates a residual calibration value plot derived from the calibration data. The user enters an unknown sample output measurement. The calculator calculates a back-calculated unknown sample input measurement. The calculator lastly calculates a confidence interval for the back-calculated unknown sample input measurement.

Abstract: An apparatus for thallium-containing superconductor with grains having c-axis alignment perpendicular to the plane of the substrate is fabricated by controlling the thallium oxide vapor partial pressure during the steps of warming the precursor, reaction soaking the precursor with the thallium oxide vapor, and cooling the thallium-containing precursor in a thallium oxide vapor below about 10.sup.-3 atmospheres.