Abstract: A two-dimensional nanoindentation measurement apparatus includes a first actuator that imparts a first force in a first direction, and a second actuator that imparts a second force in a second direction orthogonal to the first direction. A first elongate member has a first end attached to the first actuator and a second end attached to an indenter tip that engages the surface of the sample. A second elongate member includes a first end attached to the second actuator and a second end connected to the second end of the first elongate member. The first elongate member is rigid in the first direction and compliant in the second direction, and the second elongate member is rigid in the second direction and compliant in the first direction. The first force is imparted to the indenter tip in the first direction through the first elongate member, and the second force is imparted to the indenter tip in the second direction through the second elongate member.

Abstract: A two-dimensional nanoindentation measurement apparatus includes a first actuator that imparts a first force in a first direction, and a second actuator that imparts a second force in a second direction orthogonal to the first direction. A first elongate member has a first end attached to the first actuator and a second end attached to an indenter tip that engages the surface of the sample. A second elongate member includes a first end attached to the second actuator and a second end connected to the second end of the first elongate member. The first elongate member is rigid in the first direction and compliant in the second direction, and the second elongate member is rigid in the second direction and compliant in the first direction. The first force is imparted to the indenter tip in the first direction through the first elongate member, and the second force is imparted to the indenter tip in the second direction through the second elongate member.

Abstract: The invention provides a system and process of patterning structures on a carbon based surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a hard mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to a plasma etch.

Abstract: The invention provides a system and process of patterning structures on a carbon based surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a hard mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to a plasma etch.

Abstract: Systems and methods for forming patterns and structures in target materials are described. The method produces a pattern or structure in a target material by contacting a stamp including one or more features with a target material using a normal load sufficient for keeping the one or more features in contact with the target material, and providing a cyclic shear force in an amount sufficient to extrude the target material and form a negative relief of the one more features in the target material. The systems and methods can be used to produce a variety of articles including, but not limited to, semiconductor integrated electrical circuits, integrated optical, magnetic, mechanical circuits and microdevices.

Abstract: Systems and methods for forming patterns and structures in target materials are described. The method produces a pattern or structure in a target material by contacting a stamp including one or more features with a target material using a normal load sufficient for keeping the one or more features in contact with the target material, and providing a cyclic shear force in an amount sufficient to extrude the target material and form a negative relief of the one more features in the target material. The systems and methods can be used to produce a variety of articles including, but not limited to, semiconductor integrated electrical circuits, integrated optical, magnetic, mechanical circuits and microdevices.

Abstract: A method for continuously measuring the stiffness and area of contact between two bodies is provided. Elastic stiffness of a junction is measured by introducing a relatively small oscillatory mechanical force at a known frequency to the junction and measuring the subsequent displacement response using AC signal-handling techniques to provide a continuous measurement proportional to the stiffness and the area of contact between the bodies, even as the area of contact changes.