Abstract: A toy figure has a torso, a torso light source, a light source support member, a plurality of peripheral light sources, one or more spacers, and a speaker. A controller is operably connected to the torso light source, the plurality of peripheral light sources, and the speaker to coordinate a magical light and sound experience. Clothing fabric hides the plurality of peripheral light sources, but allows light from the plurality of peripheral light sources to be seen through the clothing fabric when the light and sound experience begins.

Abstract: A low temperature chemical vapor deposition method for depositing silicon dioxide comprising the steps of heating a substrate upon which deposition is desired to a temperature of between 250.degree. C. (482.degree. F.) and 420.degree. C. (788.degree. F.) in a vacuum having a pressure of from about 0.1 to about 2.0 torr and introducing, together with a silane and oxygen or oxygen-containing silane, a free radical promoter (e.g., di-t-butylperoxide, t-butylhydroperoxide, or n-butylnitrite) as a co-reactant into the vacuum.

Abstract: An article is provided manufactured by an ion-beam-assisted-deposition process. The article includes a polymeric element adapted to releasably engage a contact surface. The polymeric element is provided with a surface layer bonded to a surface of the polymeric element through an ion-beam-assisted-deposition process in order to reduce the tackiness of the polymeric material.

Abstract: A thermal reactor for epitaxial deposition on a wafer comprises a double-dome vessel and dual heat sources. Each heat source comprises inner and outer circular arrays of infrared lamps. Circumferential heating uniformity is assured by the cylindrical symmetry of the vessel and the heating sources. Radial heating uniformity is provided by independent control of inner and outer heating arrays for both the top and bottom heat sources. The relative temperatures of wafer and susceptor are controlled by adjusting relative energies provided by the upper and lower heat sources so that backside migration. Reduced pressure operation is provided for by the convex top and bottom domes. Due to the provided control over transmitted energy distribution, a susceptor can have low thermal mass so that elevated temperature can be achieved more quickly and cooling can be facilitated as well. This improves throughput and reduces manufacturing costs per wafer. Reagent gas introduction can be axial or radial as desired.

Abstract: Compound for use in a method for treatment of the human or animal body by therapy, characterized in that the compound is a carboxy azetidine derivative of the general formula I or a pharmaceutically acceptable salt, ester, amide, alkylamide, hydrazide or alkylhydrazide thereof: ##STR1## in which: X represents one of the groups CH.sub.2, CHR or CR.sub.2.Y represents one of the groups CH.sub.2, CHR, CR.sub.2 or CH.CO.sub.2 H andZ represents one of the groups CH.sub.2, CHR, CR.sub.2 or CH.CO.sub.2 H;the or each R independently represents an alkyl, alkenyl or cycloalkyl group or an aryl or aralkyl group optionally substituted on the aryl nucleus by one or more of the same or different substituents selected from halogen atoms, alkyl groups and alkoxy groups;and one but only one of Y and Z must represent a CH.CO.sub.2 H group.

Abstract: A chemical vapor deposition system which includes a generally closed reaction chamber having walls formed from a dielectric material. A susceptor for carrying a plurality of semiconductor wafers is positioned within the chamber. An induction coil is positioned in the vicinity of the susceptor for carrying an alternating electric current to produce induction heating of the susceptor and thereby heating the back side of the wafers thereon. Low frequency induction heating and variations in susceptor thickness are used to produce uniformity of temperature. Boundary control arrangement between the susceptor surface and wafer surfaces are used to improve deposition uniformity.

Abstract: An integral graphite susceptor of the barrel type comprising a hollow polyhedron arranged to support one or more semiconductor substrates on its outer planar wall surfaces. The substrates are supported in a novel column and row array in which each wafer is mounted on a wall surface portion that is related to the other adjacent wall surface portions in an equilateral triangular configuration to provide an efficient substrate support susceptor. Wafer edges extending beyond corners of the susceptor cause a disturbance in the gas flow resulting in more uniform deposition of epitaxial material.

Abstract: The specification discloses an especially designed and built bag frame that comprises a closed loop of tubing having a shaped form about which the open end of a refuse bag of plastic or other flexible material may be stretched and wrapped so as to hold the mouth of the bag open while the user rakes or gathers in grass, leaves, or other refuse. In one embodiment the frame is D-shaped so that the flat side may rest squarely on the ground. In another embodiment the frame includes spikes adjacent the flat side so that the frame may forceably be engaged with the earth so that it will stand alone when the user releases hold thereof; this permits the user to have both hands free for the raking or gathering activity.