Abstract: A process for forming a resistive random-access memory device, the process comprising the steps of: depositing a first electrode on a substrate; forming a porous resistive memory material layer on the first electrode, wherein the porous resistive memory layer is formed by (i) depositing a gaseous composition comprising a silicon precursor and a porogen precursor and, once deposited, (ii) removing the porogen precursor by exposing the composition to UV radiation; and depositing a second electrode on top of the porous resistive memory material layer.

Abstract: A highly pure nitrogen fluoride process fluid having an impurity content of 10 ppm or less can be effectively obtained by using radiation to cause the dissociation of chemical bonds in the impurity to form dissociation products and thereby make the removal of the dissociation products from the process fluid easier than the removal of the impurity from the process fluid.

Abstract: Chemical additives are used to increase the rate of deposition for the amorphous silicon film (?Si:H) and/or the microcrystalline silicon film (?CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

Abstract: A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the lay

Abstract: The objective of this invention is to use chemical additives to increase the rate of deposition processes for the amorphous silicon film (?Si:H) and/or the microcrystalline silicon film (?CSi:H), and improve the electrical current generating capability of the deposited films for photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

Abstract: A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the lay

Abstract: An apparatus for containing and delivering hazardous gases at sub-atmospheric pressure from a pressurized container is provided which includes a valve body in sealed communication with an outlet orifice of the pressurized container. The outlet orifice of the pressurized container is open to an interior chamber of the pressurized container. A fluid discharge path is located in the valve body, between the outlet orifice of the pressurized container and an outlet orifice of the valve body. A pressure regulator having a pressure sensing means capable of responding to sub-atomospheric pressure, is integral to the valve body, in-line in the fluid discharge path with the pressure regulator pre-set to a pressure below atmospheric pressure to allow the gas to be delivered through the regulator from the interior chamber only when the pressure regulator senses a downstream pressure at or below the pre-set pressure.

Abstract: A method of using PFCs recovered from the effluent of a CVD chamber cleaning process as an influent for the cleaning process is provided which includes the steps of selecting a first PFC gas mixture having a first ratio of C2F6 to CF4, providing the first PFC gas mixture as the influent gas to the CVD chamber to create a CVD chamber effluent gas of a second PFC gas mixture having a second ratio of C2F6 to CF4, adding virgin C2F6 or CF4 to the CVD chamber effluent gas in sufficient quantity to create a third PFC gas mixture having the first ratio of C2F6 to CF4, and using the third PFC gas mixture as the influent gas to the CVD chamber.

Abstract: An on-line halogen analyzer system and method of use for semiconductor processing effluent monitoring. The system includes sampling the effluent stream into an absorption cell, and passing UV-Visible light through the effluent sample in the cell. After passing through the sample the light is collected by a photo detector for real-time wavelength-selective absorption analysis. The system provides simultaneous determination of the concentrations of multiple halogen gases (e.g. F2, Cl2, Br2, and I2) in semiconductor processing effluent streams. The invention can be used for chemical vapor deposition (CVD) chamber cleaning endpoint determination and to improve fluorine utilization efficiency in remote plasma downstream CVD chamber cleaning processes.

Abstract: A mobile, self-evacuating, micro-environment system for transit and storage of substrates between two or more processing chambers in the manufacture of semiconductor devices is provided where the system includes a mobile cart, a vacuum sealable container to hold the substrates, a vacuum source having a portable power source, located on the cart and capable of generating a vacuum in the container, and a docking valve to mate with a corresponding valve on each of the processing chambers, where the docking valve and the corresponding valve are securable to one another to form a substantially vacuum-tight seal and openable, while mated, to permit unloading and loading of substrates between the container and the processing chamber. A method of using the system is also provided.

Abstract: A method of using PFCs recovered from the effluent of a CVD chamber cleaning process as an influent for the cleaning process is provided which includes the steps of selecting a first PFC gas mixture having a first ratio of C2F6 to CF4, providing the first PFC gas mixture as the influent gas to the CVD chamber to create a CVD chamber effluent gas of a second PFC gas mixture having a second ratio of C2F6 to CF4, adding virgin C2F6 or CF4 to the CVD chamber effluent gas in sufficient quantity to create a third PFC gas mixture having the first ratio of C2F6 to CF4, and using the third PFC gas mixture as the influent gas to the CVD chamber.

Abstract: An on-line halogen analyzer system and method of use for semiconductor processing effluent monitoring. The system includes sampling the effluent stream into an absorption cell, and passing UV-Visible light through the effluent sample in the cell. After passing through the sample the light is collected by a photo detector for real-time wavelength-selective absorption analysis. The system provides simultaneous determination of the concentrations of multiple halogen gases (e.g. F2, Cl2, Br2, and I2) in semiconductor processing effluent streams. The invention can be used for chemical vapor deposition (CVD) chamber cleaning endpoint determination and to improve fluorine utilization efficiency in remote plasma downstream CVD chamber cleaning processes.

Abstract: A mobile, self-evacuating, micro-environment system for transit and storage of substrates between two or more processing chambers in the manufacture of semiconductor devices is provided where the system includes a mobile cart, a vacuum sealable container to hold the substrates, a vacuum source having a portable power source, located on the cart and capable of generating a vacuum in the container, and a docking valve to mate with a corresponding valve on each of the processing chambers, where the docking valve and the corresponding valve are securable to one another to form a substantially vacuum-tight seal and openable, while mated, to permit unloading and loading of substrates between the container and the processing chamber. A method of using the system is also provided.

Abstract: A method and apparatus for pressurizing a high purity gas in liquefied form to an ultra high pressure gas in vapor form using a constant volume, heated vaporization vessel.

Abstract: A process for abating NF.sub.3 by contacting it with a metal oxalate or carbonate.