Abstract: A radio frequency (RF) generator system includes first and second RF power sources, each RF power source applying a respective RF signal and second RF signal to a load. The first RF signal is applied in accordance with the application of the second RF signal. The application of the first RF signal is synchronized to application of the second RF signal. The first RF signal may be amplitude modulated in synchronization with the second RF signal, and the amplitude modulation can include blanking of the first RF signal. A frequency offset may be applied to the first RF signal in synchronization with the second RF signal. A variable actuator associated with the first RF power source may be controlled in accordance with the second RF signal.

Abstract: Systems and methods for cleaning an edge ring pocket are described herein. One of the methods includes providing one or more process gases to a plasma chamber, supplying a low frequency (LF) radio frequency (RF) power to an edge ring that is located adjacent to a chuck of the plasma chamber. The LF RF power is supplied while the one or more process gases are supplied to the plasma chamber to maintain plasma within the plasma chamber. The supply of the LF RF power increases energy of plasma ions near the edge ring pocket to remove residue in the edge ring pocket. The LF RF power is supplied during the time period in which a substrate is not being processed within the plasma chamber.

Abstract: Provided herein are VHH-containing polypeptides that bind CD123. Uses of the VHH-containing polypeptides are also provided.

Abstract: A method for optimizing delivery of power to a plasma chamber is described. The method includes dividing each cycle of a low frequency (LF) radio frequency generator (RFG) into multiple time intervals. During each of the time intervals, a frequency offset of a high frequency (HF) RFG is generated for which the delivery of power is maximized. The frequency offsets provide a substantially inverse relationship compared to a voltage signal of the LF RFG for each cycle of the voltage signal. The frequency offsets for the time intervals are multiples of the low frequency. The substantially inverse relationship facilitates an increase in the delivery of power to the electrode. A total range of the frequency offsets from a reference HF frequency over the LF RF cycle depends on a power ratio of power that is supplied by the LF RFG and power that is supplied by the HF RFG.

Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

Abstract: First, second, third, and fourth radiofrequency (RF) signal generators generate first, second, third, and fourth RF signals, respectively, having first, second, third, and fourth frequencies, respectively. The second and third frequencies are different specified harmonics of the first frequency. The fourth frequency is at least two orders of magnitude larger than the first frequency. An impedance matching system controls impedances for the first, second, third, and fourth RF signal generators. A control module is programmed to control: A) a first phase difference between the first and second RF signals, B) a second phase difference between the first and third RF signals, C) a first voltage difference between the first and second RF signals, D) a second voltage difference between the first and third RF signals. The first and second phase differences and the first and second voltage differences collectively control a plasma sheath voltage as a function of time.

Abstract: A computing system can implement a computer-implemented method for providing selective control of an acoustic environment of a user. The computer-implemented method can include determining a selected audio source of a plurality of audio sources in an environment of a user based at least in part on a selection user input at a peripheral device, where the peripheral device is in communication with the computing system. The computer-implemented method can include receiving a configuration user input at the peripheral device, where the configuration user input is indicative of an intent to configure an audio characteristic associated with the selected audio source. The computer-implemented method can include, in response to receiving the configuration user input, configuring the audio characteristic associated with the selected audio source based at least in part on the configuration user input.

Abstract: A system for performing a plasma process on a wafer is provided, including: a chamber configured to receive a wafer for plasma processing and having an interior defining a plasma processing region in which a plasma is provided for the plasma processing of the wafer; a first magnetic coil disposed above the chamber and centered about an axis perpendicular to a surface plane of the wafer and through an approximate center of the wafer; a first DC power supply configured to apply a first DC current to the first magnetic coil during the plasma processing, the applied first DC current producing a magnetic field in the plasma processing region that reduces non-uniformity of the plasma.

Abstract: A first radiofrequency signal generator is set to generate a low frequency signal. A second radiofrequency signal generator is set to generate a high frequency signal. An impedance matching system has a first input connected to an output of the first radiofrequency signal generator and a second input connected to an output of the second radiofrequency signal generator. The impedance matching system controls impedances at the outputs of the first and second radiofrequency signal generators. An output of the impedance matching system is connected to a radiofrequency supply input of a plasma processing system. A control module monitors reflected voltage at the output of the second radiofrequency signal generator. The control module determines when the reflected voltage indicates a change in impedance along a transmission path of the high frequency signal that is indicative of a particular process condition and/or event within the plasma processing system.

Abstract: A kettlebell swing hat may be described herein. The kettlebell swing hat may comprise a beanie cap with two holes at the crown of the beanie cap, a soft round ball with two holes through the soft round ball; and a sting with a first end and a second end. The string secures the soft round ball to the beanie cap by knotting the first end and the second end together. The kettlebell swing hat may assist in correcting the timing of the kettlebell swing. It may give feedback on the proper way to squat/hinge during the swing, and showcase instant feedback on whether or not the individual is generating enough power into the ground to create a safe and effective swing. The kettlebell swing hat may assist in fixing the overall technique and pinpoint any flaws within the exercise.

Abstract: Showerhead faceplates for semiconductor processing chambers are provided that include one or more sets of gas distribution passages therethrough that extend at least partially along axes that are at an oblique angle to the showerhead faceplate center axis. Such angled gas distribution passages may be used to tailor the gas flow characteristics of such showerhead faceplates to produce various desired gas flow behaviors in the gas that is delivered to the wafer via such showerhead faceplates.

Abstract: A method for applying RF power in a plasma process chamber is provided, including: generating a first RF signal; generating a second RF signal; generating a third RF signal; wherein the first, second, and third RF signals are generated at different frequencies; combining the first, second and third RF signals to generate a combined RF signal, wherein a wave shape of the combined RF signal is configured to approximate a sloped square wave shape; applying the combined RF signal to a chuck in the plasma process chamber.

Abstract: In some implementations, a method for performing a plasma process in a chamber is provided, including: supplying a process gas to the chamber; applying pulsed RF power to the process gas in the chamber, the pulsed RF power being provided at a predefined frequency, wherein the applying of the pulsed RF power to the process gas generates a plasma in the chamber; during the applying of the RF power, applying a pulsed DC current to a magnetic coil that is disposed over the chamber, wherein the pulsed DC current is provided at the predefined frequency.

Abstract: Systems and methods for generating audio presentations are provided. A method can include obtaining data indicative of an acoustic environment for a user; obtaining data indicative of one or more events; generating, by an artificial intelligence system, an audio presentation for the user based at least in part on the data indicative of the one or more events and the data indicative of the acoustic environment for the user; and presenting the audio presentation to the user. The acoustic environment can include at least one of a first audio signal playing on the computing system or a second audio signal associated with a surrounding environment of the user. The one or more events can include at least one of information to be conveyed by the computing system to the user or at least a portion of the second audio signal associated with the surrounding environment of the user.

Abstract: A substrate support for a substrate processing chamber includes a baseplate, an edge ring arranged on the baseplate, a seal arrangement located between the edge ring and the baseplate that is configured to define an interface between the edge ring and the baseplate, and at least one channel in fluid communication with the interface and configured to supply a heat transfer gas to the interface.

Abstract: An edge ring for a substrate processing system includes an annular body and an annular channel disposed in the annular body circumferentially along an inner diameter of the annular body. The annular channel includes N distinct sections, where N is an integer greater than 1. The edge ring includes N injection ports arranged circumferentially on the annular body to respectively inject one or more gases into the N distinct sections of the annular channel. The edge ring includes a flange extending radially inwards from the inner diameter of the annular body. A plurality of slits is arranged in the flange. The slits are in fluid communication with the annular channel and extend radially inwards from the annular channel to deliver the one or more gases.

Abstract: An impedance match is described. The impedance match includes a housing having a bottom portion and a top portion. The bottom portion has match components and the top portion has an elongated body. A low frequency input is connected through the bottom portion of the housing, and the low frequency input is interconnected to a first set of capacitors and inductors. A high frequency input is connected through the bottom portion of the housing, and the high frequency input is interconnected to a second set of capacitors and inductors. An elongated strap extends between the bottom portion and the top portion of the housing. A lower portion of the elongated strap is coupled to the second set of capacitors and inductors and an upper portion of the elongated strap is connected to an RF rod at an end of the elongated body.

Abstract: An edge ring system comprising a substrate support configured to support a substrate during plasma processing and including a baseplate and an upper layer arranged on the baseplate. An edge ring support includes a first body and an electrostatic clamping electrode arranged in the first body. The edge ring support is arranged above the baseplate and radially outside of the substrate during processing. An edge ring includes a second body arranged on and electrostatically clamped to the edge ring support during plasma processing.

Abstract: A plasma lining structure is used in a process chamber to block direct line-of-sight for plasma generated within to grounded surface. The plasma lining structure includes a plurality of sections to cover at least one or more portions of an inside surface of a plasma confinement structure disposed in the process chamber. The sections of the plasma lining structure are positioned between a plasma region and the sidewall of the plasma confinement structure, when the plasma lining structure and the plasma confinement structure are disposed in the plasma chamber, such that the sections directly face the plasma region.

Abstract: A fixed outer support flange (flange 1) is formed to circumscribe an electrode within a plasma processing system. Flange 1 has a vertical portion and a horizontal portion extending radially outward from a lower end of the vertical portion. An articulating outer support flange (flange 2) is formed to circumscribe flange 1. Flange 2 has a vertical portion and a horizontal portion extending radially outward from a lower end of the vertical portion. The vertical portion of flange 2 is positioned concentrically outside of the vertical portion of flange 1. Flange 2 is spaced apart from flange 1 and moveable along the vertical portion of flange 1. Each of a plurality of electrically conductive straps has a first end portion connected to flange 2 and a second end portion connected to flange 1.