Patents by Inventor John J. Seliskar

John J. Seliskar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7968409
    Abstract: A Mixed-Signal Semiconductor Platform Incorporating Castellated-Gate MOSFET device(s) capable of Fully-Depleted operation is disclosed along with a method of making the same. The composite device/technology platform has robust I/O applications and includes a starting semiconductor substrate of a first conductivity type. One or more isolated regions of at least a first conductivity type is separated by trench isolation insulator islands. Within an isolated region designated for castellated-gate MOSFETs there exists a semiconductor body consisting of an upper portion with an upper surface, and a lower portion with a lower surface. Also within the castellated-gate MOSFET region, there exists a source region, a drain region, and a channel-forming region disposed between the source and drain regions, and are all formed within the semiconductor substrate body.
    Type: Grant
    Filed: March 26, 2010
    Date of Patent: June 28, 2011
    Inventor: John J. Seliskar
  • Publication number: 20100317163
    Abstract: A Mixed-Signal Semiconductor Platform Incorporating Castellated-Gate MOSFET device(s) capable of Fully-Depleted operation is disclosed along with a method of making the same. The composite device/technology platform has robust I/O applications and includes a starting semiconductor substrate of a first conductivity type. One or more isolated regions of at least a first conductivity type is separated by trench isolation insulator islands. Within an isolated region designated for castellated-gate MOSFETs there exists a semiconductor body consisting of an upper portion with an upper surface, and a lower portion with a lower surface. Also within the castellated-gate MOSFET region, there exists a source region, a drain region, and a channel-forming region disposed between the source and drain regions, and are all formed within the semiconductor substrate body.
    Type: Application
    Filed: March 26, 2010
    Publication date: December 16, 2010
    Inventor: John J. Seliskar
  • Publication number: 20100155835
    Abstract: A castellated-gate MOSFET tetrode device capable of fully depleted operation is disclosed. The device includes a semiconductor substrate region having an upper portion with a top surface and a lower portion with a bottom surface. A source region and a drain region are formed in the semiconductor substrate region, with adjoined primary and secondary channel-forming regions also disposed therein between the source and drain regions, thereby forming an integrated cascade structure. Trench isolation insulator islands, having upper and lower surfaces, surround the source and drain regions as well as the channel-forming regions. Both the primary and secondary channel-forming regions include pluralities of thin, spaced, vertically-orientated semiconductor channel elements that span longitudinally along the device between the source and drain regions.
    Type: Application
    Filed: February 23, 2010
    Publication date: June 24, 2010
    Inventor: John J. Seliskar
  • Patent number: 7719058
    Abstract: A Mixed-Signal Semiconductor Platform Incorporating Castellated-Gate MOSFET device(s) capable of Fully-Depleted operation is disclosed along with a method of making the same. The composite device/technology platform has robust I/O applications and includes a starting semiconductor substrate of a first conductivity type. One or more isolated regions of at least a first conductivity type is separated by trench isolation insulator islands. Within an isolated region designated for castellated-gate MOSFETs there exists a semiconductor body consisting of an upper portion with an upper surface, and a lower portion with a lower surface. Also within the castellated-gate MOSFET region, there exists a source region, a drain region, and a channel-forming region disposed between the source and drain regions, and are all formed within the semiconductor substrate body.
    Type: Grant
    Filed: October 12, 2005
    Date of Patent: May 18, 2010
    Inventor: John J. Seliskar
  • Patent number: 7714384
    Abstract: A castellated-gate MOSFET I/O device capable of fully depleted operation is disclosed. The device includes a semiconductor substrate region having an upper portion with a top surface and a lower portion with a bottom surface. A source region and a drain region are formed in the semiconductor substrate region, and a channel-forming region is also disposed therein between the source and drain regions. Trench isolation insulator islands, having upper and lower surfaces, surround the source and drain regions as well as the channel-forming region. The channel-forming region includes a plurality of thin, spaced, vertically-orientated conductive channel elements that span longitudinally along the device between the source and drain regions. A gate structure is provided in the form of a plurality of spaced, castellated gate elements interposed between the channel elements, and a top gate member interconnects the gate elements at their upper vertical ends to cover the channel elements.
    Type: Grant
    Filed: April 27, 2007
    Date of Patent: May 11, 2010
    Inventor: John J. Seliskar
  • Patent number: 7439139
    Abstract: A fully depleted castellated-gate MOSFET device is disclosed along with a method of making the same. The device has robust I/O applications, and includes a semiconductor substrate body having an upper portion with an upper end surface and a lower portion with a lower end surface. A source region, a drain region, and a channel-forming region between the source and drain regions are all formed in the semiconductor substrate body. Trench isolation insulator islands surround the source and drain regions as well as the channel-forming region. The channel-forming region is made up of a plurality of thin, spaced, vertically-orientated conductive channel elements that span longitudinally along the device between the source and drain regions. A gate structure is also provided in the form of a plurality of spaced, castellated gate elements interposed between the channel elements.
    Type: Grant
    Filed: March 23, 2007
    Date of Patent: October 21, 2008
    Inventor: John J. Seliskar
  • Patent number: 7211864
    Abstract: A fully depleted castellated-gate MOSFET device is disclosed along with a method of making the same. The device has robust I/O applications, and includes a semiconductor substrate body having an upper portion with an upper end surface and a lower portion with a lower end surface. A source region, a drain region, and a channel-forming region between the source and drain regions are all formed in the semiconductor substrate body. trench isolation insulator islands surround the source and drain regions as well as the channel-forming region. The channel-forming region is made up of a plurality of thin, spaced, vertically-orientated conductive channel elements that span longitudinally along the device between the source and drain regions. A gate structure is also provided in the form of a plurality of spaced, castellated gate elements interposed between the channel elements.
    Type: Grant
    Filed: September 13, 2004
    Date of Patent: May 1, 2007
    Inventor: John J. Seliskar
  • Patent number: 6525377
    Abstract: A low threshold voltage MOS device on a semiconductor substrate is disclosed. The substrate has an upper surface, and a first well region is disposed in said semiconductor substrate extending downwardly from the semiconductor substrate upper surface. The first well region includes a dopant of a first conductivity type having a first average dopant concentration. Source and drain regions of a second conductivity type are laterally spaced from each other and are disposed in the first well region, the source and drain regions extending downwardly from the semiconductor substrate upper surface a predetermined distance. A channel region comprising the first well region of the first conductivity type is disposed between the source and drain regions. The channel region also extends at least the predetermined distance below the semiconductor substrate upper surface.
    Type: Grant
    Filed: August 9, 1999
    Date of Patent: February 25, 2003
    Assignee: LSI Logic Corporation
    Inventor: John J. Seliskar
  • Patent number: 6355532
    Abstract: A short vertical channel, dual-gate, CMOS FET is fabricated by forming a plurality of channel segments in a starting material that extend longitudinally between source and drain areas. The channel segments are laterally separated from one another by spaces and are preferably formed from pillars of starting material located between the spaces. The pillars are laterally oxidized and the oxidation is removed to reduce the width of the pillars and form the channel segments. A gate structure is formed in the spaces between the channel segments. The width of each pillar is defined by conventional, contemporaneous photolithographic exposure and etching, but the width of each channel segment is substantially less than the width of the etch resistant barrier created photolithographically.
    Type: Grant
    Filed: October 6, 1999
    Date of Patent: March 12, 2002
    Assignee: LSI Logic Corporation
    Inventors: John J. Seliskar, Verne Hornback, David Daniel
  • Patent number: 6316817
    Abstract: High energy implantation through varying vertical thicknesses of one or more films is used to form a vertically modulated sub-collector, which simultaneously reduces both the vertical and lateral components of parasitic collector resistance in a vertically integrated bipolar device. The need for a sinker implant or other additional steps to reduce collector resistance is avoided. The necessary processing modifications may be readily integrated into conventional bipolar or BiCMOS process flows.
    Type: Grant
    Filed: December 14, 1998
    Date of Patent: November 13, 2001
    Assignee: LSI Logic Corporation
    Inventors: John J. Seliskar, David W. Daniel, Todd A. Randazzo
  • Patent number: 6284586
    Abstract: The present invention relates to a semiconductor device, preferably a capacitor, and a method of forming the same. The method adds only a single additional masking step to the the fabrication process and reduces problems relating to alignment of various layers. A relatively thick insulation layer is formed over a bottom electrode. An opening having a sidewall that is etched in the insulation layer using a mask to expose a portion of the bottom electrode. Once the mask is removed, a dielectric layer and conductive layer are then sequentially deposited over the entire structure, including sidewalls. Thereafter, chemical-mechanical polishing is used to remove portions of the conductive layer and the dielectric layer so that the conductive layer and dielectric layer which remains forms, for example, the top electrode and dielectric layer of the integrated circuit capacitor.
    Type: Grant
    Filed: November 1, 1999
    Date of Patent: September 4, 2001
    Assignee: LSI Logic Corporation
    Inventors: John J. Seliskar, Derryl D. J. Allman, John W. Gregory, James P. Yakura, Dim Lee Kwong
  • Patent number: 6115233
    Abstract: The present invention relates to a semiconductor device, preferably a capacitor, and a method of forming the same. The method adds only a single additional masking step to the fabrication process and reduces problems relating to alignment of various layers. A relatively thick insulation layer is formed over a bottom electrode. An opening having a sidewall that is etched in the insulation layer using a mask to expose a portion of the bottom electrode. Once the mask is removed, a dielectric layer and conductive layer are then sequentially deposited over the entire structure, including sidewalls. Thereafter, chemical-mechanical polishing is used to remove portions of the conductive layer and the dielectric layer so that the conductive layer and dielectric layer which remains forms, for example, the top electrode and dielectric layer of the integrated circuit capacitor.
    Type: Grant
    Filed: June 28, 1996
    Date of Patent: September 5, 2000
    Assignee: LSI Logic Corporation
    Inventors: John J. Seliskar, Derryl D. J. Allman, John W. Gregory, James P. Yakura, Dim Lee Kwong
  • Patent number: 5985705
    Abstract: A low threshold voltage MOS device on a semiconductor substrate is disclosed. The substrate has an upper surface, and a first well region is disposed in said semiconductor substrate extending downwardly from the semiconductor substrate upper surface. The first well region includes a dopant of a first conductivity type having a first average dopant concentration. Source and drain regions of a second conductivity type are laterally spaced from each other and are disposed in the first well region, the source and drain regions extending downwardly from the semiconductor substrate upper surface a predetermined distance. A channel region comprising the first well region of the first conductivity type is disposed between the source and drain regions. The channel region also extends at least the predetermined distance below the semiconductor substrate upper surface.
    Type: Grant
    Filed: June 30, 1998
    Date of Patent: November 16, 1999
    Assignee: LSI Logic Corporation
    Inventor: John J. Seliskar
  • Patent number: 5858828
    Abstract: High energy implantation through varying vertical thicknesses of one or more films is used to form a vertically modulated sub-collector, which simultaneously reduces both the vertical and lateral components of parasitic collector resistance in a vertically integrated bipolar device. The need for a sinker implant or other additional steps to reduce collector resistance is avoided. The necessary processing modifications may be readily integrated into conventional bipolar or BiCMOS process flows.
    Type: Grant
    Filed: February 18, 1997
    Date of Patent: January 12, 1999
    Assignee: Symbios, Inc.
    Inventors: John J. Seliskar, David W. Daniel, Todd A. Randazzo
  • Patent number: 5780329
    Abstract: A bipolar transistor with a relatively deep emitter region is formed in a BICMOS device using the source/drain mask used to form the source and drain regions of MOSFETs of the device and the base region mask which would otherwise be required in any event to diffuse an emitter region of the bipolar transistor. The emitter is diffused or implanted to a depth greater than the depth to which a source and a drain region of the MOSFET are diffused. By using only the base region and source/drain region masks, and developing in sequence, each of two coatings of photoresist applied on top of one another, an access opening to the emitter region is define solely by the co-location of openings in each of the two coatings, thereby allowing the emitter region to be separately and additionally implanted. The access to the base region for the additional implication is achieved using only a few additional photo-ops and not as a result of using an additional emitter mask.
    Type: Grant
    Filed: April 3, 1997
    Date of Patent: July 14, 1998
    Assignee: Symbios, Inc.
    Inventors: Todd A. Randazzo, John J. Seliskar