Abstract: A system for lot based, multi-step wafer manufacturing processes is provided and includes a transfer apparatus, disposed among tools for performing respective process steps on each wafer of each lot of wafers transferred thereto, the transfer apparatus being configured to transfer each lot from a current tool to a next tool in accordance with a process step sequence, a dispatcher operably coupled to the transfer apparatus to modify the lot order in response to a modification condition detection, a measurement unit configured to receive each wafer of each fully processed lot and to collect measurements therefrom and a processor disposed in signal communication with the dispatcher and the measurement unit to analyze the measurements relative to the lot order for evidence that a process step of a corresponding tool is responsible for performance effects.

Abstract: A method and apparatus for monitoring an etch process. The etch process may be monitored using measurement information (e.g., critical dimensions (CD), layer thickness, and the like) provided ex-situ with respect to the etch process in combination with in-situ monitoring (e.g., spectroscopy, interferometry, scatterometry, reflectometry, and the like) performed during the etch process. The ex-situ measurement information in combination with the in-situ monitoring may be used to monitor for example, an endpoint of an etch process, an etch depth profile of a feature formed on a substrate, fault detection of an integrated circuit manufacturing process, and the like.

Abstract: A method and apparatus for monitoring an etch process. The etch process may be monitored using measurement information (e.g., critical dimensions (CD), layer thickness, and the like) provided ex-situ with respect to the etch process in combination with in-situ monitoring (e.g., spectroscopy, interferometry, scatterometry, reflectometry, and the like) performed during the etch process. The ex-situ measurement information in combination with the in-situ monitoring may be used to monitor for example, an endpoint of an etch process, an etch depth profile of a feature formed on a substrate, fault detection of an integrated circuit manufacturing process, and the like.

Abstract: A system for lot based, multi-step wafer manufacturing processes is provided and includes a transfer apparatus, disposed among tools for performing respective process steps on each wafer of each lot of wafers transferred thereto, the transfer apparatus being configured to transfer each lot from a current tool to a next tool in accordance with a process step sequence, a dispatcher operably coupled to the transfer apparatus to modify the lot order in response to a modification condition detection, a measurement unit configured to receive each wafer of each fully processed lot and to collect measurements therefrom and a processor disposed in signal communication with the dispatcher and the measurement unit to analyze the measurements relative to the lot order for evidence that a process step of a corresponding tool is responsible for performance effects.

Abstract: A method and system is provided for monitoring manufacturing equipment and, more particularly, for monitoring manufacturing equipment in a semiconductor fabrication facility using existing tool elements. The method includes operating a tool working at an operating mode such that at least one of its control parameters is outside of a normal operating range, and measuring the at least on of the control parameters of the tool working at the operating mode outside of the normal operating range. The method further includes detecting a change to a condition of the tool based on the measuring of the at least one control parameter.

Abstract: In accordance with an embodiment of the invention, a step in a fabrication process can be conducted so as to determine when the process has reached an end point. End point detection can be performed by detecting when a operating process condition changes. For example, in one embodiment, a step in a fabrication process (e.g., an etching step) can be conducted in a chamber by varying a position of a throttle valve connected to the chamber so as to maintain a desired pressure within the chamber. In such method, it can be determined when the etching step has reached an end point by detecting when a signal representative of the throttle valve position changes in a particular way which matches an expected signature. In another embodiment, a step in a fabrication process can be conducted in a chamber by maintaining a desired flow within the chamber, such as by controlling a throttle valve, and allowing the pressure within the chamber to vary.

Abstract: In at least one embodiment, the present invention is a method for thin-film process chamber data analysis, which includes acquiring chamber data, defining an adjustment portion of the chamber data and a steady-state portion of the chamber data, and forming a chamber model having an adjustment portion and a steady-state portion. The method can further include comparing the chamber model with a subject chamber to provide a chamber data comparison and utilizing the chamber data comparison.

Abstract: A method and system is provided for monitoring manufacturing equipment and, more particularly, for monitoring manufacturing equipment in a semiconductor fabrication facility using existing tool elements. The method includes operating a tool working at an operating mode such that at least one of its control parameters is outside of a normal operating range, and measuring the at least on of the control parameters of the tool working at the operating mode outside of the normal operating range. The method further includes detecting a change to a condition of the tool based on the measuring of the at least one control parameter.

Abstract: A method of controlling a plasma processing according to trajectories connecting start and stop values of parameters controlling the plasma processing, for example, gas flow and power supplied to generate the plasma. The trajectories maybe based on equations including at least time as a variable. At set times within the processing, the values of the parameters are updated according to the predetermined trajectories. Sensors associated with the chamber may also adjust the trajectories, provide variables to the equations, and/or define the trajectories.

Abstract: A method and apparatus for monitoring an etch process. The etch process may be monitored using measurement information (e.g., critical dimensions (CD), layer thickness, and the like) provided ex-situ with respect to the etch process in combination with in-situ monitoring (e.g., spectroscopy, interferometry, scatterometry, reflectometry, and the like) performed during the etch process. The ex-situ measurement information in combination with the in-situ monitoring may be used to monitor for example, an endpoint of an etch process, an etch depth profile of a feature formed on a substrate, fault detection of an integrated circuit manufacturing process, and the like.

Abstract: A substrate etching chamber has a substrate support, a gas supply to introduce a process gas into the chamber; an inductor antenna to sustain a plasma of the process gas in a process zone of the chamber, and an exhaust to exhaust the process gas. A magnetic field generator disposed about the chamber has first and second solenoids. A controller is adapted to control a power supply to provide a first current to the first solenoid and a second current to the second solenoid, thereby generating a magnetic field in the process zone of the chamber to controllably shape the plasma in the process zone to reduce etch rate variations across the substrate.

Abstract: A method of eliminating charging resulting from plasma processing a semiconductor wafer comprising the steps of plasma processing the semiconductor wafer in a manner that may result in topographically dependent charging and exposing, during at least a portion of a time in which the semiconductor wafer is being plasma processed, the semiconductor wafer to particles that remove charge from the semiconductor wafer and reduce topographically dependent charging.

Abstract: A method of improving plasma processing of a semiconductor wafer by exposing the wafer or the plasma to photons while the wafer is being processed. One embodiment of the method comprises the steps of etching an aluminum layer and, during the etching, exposing the semiconductor wafer containing the aluminum layer to photons that photodesorb copper chloride from the surface of the layer thus improving the etch process performance.

Abstract: A method for processing a semiconductor wafer with a plasma using continuous RF power for a first phase of wafer processing and with pulsed RF power for a second phase of wafer processing.

Abstract: A method for processing a semiconductor wafer with a plasma using continuous RF power for a first phase of wafer processing and with pulsed RF power for a second phase of wafer processing.