Abstract: A method and structures are used to fabricate a nanosheet semiconductor device. Nanosheet fins including nanosheet stacks including alternating silicon (Si) layers and silicon germanium (SiGe) layers are formed on a substrate and etched to define a first end and a second end along a first axis between which each nanosheet fin extends parallel to every other nanosheet fin. The SiGe layers are undercut in the nanosheet stacks at the first end and the second end to form divots, and a dielectric is deposited in the divots. The SiGe layers between the Si layers are removed before forming source and drain regions of the nanosheet semiconductor device such that there are gaps between the Si layers of each nanosheet stack, and the dielectric anchors the Si layers. The gaps are filled with an oxide that is removed after removing the dummy gate and prior to forming the replacement gate.

Abstract: A method of forming a semiconductor device that includes forming a trench adjacent to a gate structure to expose a contact surface of one of a source region and a drain region. A sacrificial spacer may be formed on a sidewall of the trench and on a sidewall of the gate structure. A metal contact may then be formed in the trench to at least one of the source region and the drain region. The metal contact has a base width that is less than an upper surface width of the metal contact. The sacrificial spacer may be removed, and a substantially conformal dielectric material layer can be formed on sidewalls of the metal contact and the gate structure. Portions of the conformally dielectric material layer contact one another at a pinch off region to form an air gap between the metal contact and the gate structure.

Abstract: A method and structures are used to fabricate a nanosheet semiconductor device. Nanosheet fins including nanosheet stacks including alternating silicon (Si) layers and silicon germanium (SiGe) layers are formed on a substrate and etched to define a first end and a second end along a first axis between which each nanosheet fin extends parallel to every other nanosheet fin. The SiGe layers are undercut in the nanosheet stacks at the first end and the second end to form divots, and a dielectric is deposited in the divots. The SiGe layers between the Si layers are removed before forming source and drain regions of the nanosheet semiconductor device such that there are gaps between the Si layers of each nanosheet stack, and the dielectric anchors the Si layers. The gaps are filled with an oxide that is removed after removing the dummy gate and prior to forming the replacement gate.

Abstract: A method of forming a semiconductor device that includes forming a trench adjacent to a gate structure to expose a contact surface of one of a source region and a drain region. A sacrificial spacer may be formed on a sidewall of the trench and on a sidewall of the gate structure. A metal contact may then be formed in the trench to at least one of the source region and the drain region. The metal contact has a base width that is less than an upper surface width of the metal contact. The sacrificial spacer may be removed, and a substantially conformal dielectric material layer can be formed on sidewalls of the metal contact and the gate structure. Portions of the conformally dielectric material layer contact one another at a pinch off region to form an air gap between the metal contact and the gate structure.

Abstract: The present invention provides fin cut techniques in a replacement gate process for finFET fabrication. In one aspect, a method of forming a finFET employs a dummy gate material to pin a lattice constant of patterned fins prior to a fin cut thereby preventing strain relaxation. A dielectric fill in a region of the fin cut (below the dummy gates) reduces an aspect ratio of dummy gates formed from the dummy gate material in the fin cut region, thereby preventing collapse of the dummy gates. FinFETs formed using the present process are also provided.

Abstract: A method of forming adjacent fin field effect transistor devices is provided. The method includes forming at least two vertical fins in a column on a substrate, depositing a gate dielectric layer on the vertical fins, and depositing a work function material layer on the gate dielectric layer. The method further includes depositing a protective liner on the work function material layer, and forming a fill layer on the protective liner. The method further includes removing a portion of the fill layer to form an opening between an adjacent pair of two vertical fins, where the opening exposes a portion of the protective liner. The method further includes depositing an etch-stop layer on the exposed surfaces of the fill layer and protective liner, forming a gauge layer in the opening to a predetermined height, and removing the exposed portion of the etch-stop layer to form an etch-stop segment.

Abstract: A method and structures are used to fabricate a nanosheet semiconductor device. Nanosheet fins including nanosheet stacks including alternating silicon (Si) layers and silicon germanium (SiGe) layers are formed on a substrate and etched to define a first end and a second end along a first axis between which each nanosheet fin extends parallel to every other nanosheet fin. The SiGe layers are undercut in the nanosheet stacks at the first end and the second end to form divots, and a dielectric is deposited in the divots. The SiGe layers between the Si layers are removed before forming source and drain regions of the nanosheet semiconductor device such that there are gaps between the Si layers of each nanosheet stack, and the dielectric anchors the Si layers. The gaps are filled with an oxide that is removed after removing the dummy gate and prior to forming the replacement gate.

Abstract: Semiconductor devices include a first semiconductor fin. A first gate stack is formed over the first semiconductor fin. Source and drain regions are formed on respective sides of the first gate stack. An interlayer dielectric is formed around the first gate stack. A gate cut plug is formed from a dielectric material at an end of the first gate stack.

Abstract: Methods of forming semiconductor devices include forming a lower dielectric layer, to a height below a height of a dummy gate hardmask disposed across multiple device regions, by forming a dielectric fill to the height of a dummy gate and etching the dielectric fill back. A dummy gate structure includes the dummy gate and the dummy gate hardmask. A protective layer is formed on the dielectric layer to the height of the dummy gate hardmask. The dummy gate hardmask is etched back to expose the dummy gate.

Abstract: Semiconductor devices include a first dielectric layer formed over a source and drain region. A second dielectric layer is formed over the first dielectric layer. The second dielectric layer has an internal structure that is the result of a thermal oxidation process and has a higher quality than an internal structure of the first dielectric layer. A gate stack is positioned through the first and second dielectric layers.

Abstract: A method for semiconductor processing includes removing, from a first region of a semiconductor device, a middle layer and a bottom layer of a trilayer structure including a photoresist layer to expose at least one first structure. A top layer of the trilayer structure in a second region of the semiconductor device is removed during the removal of the bottom layer in the first region. The method further includes, after removing the middle and bottom layers in the first region, filling the first region to protect the at least one first structure.

Abstract: Sub-fin removal techniques for SOI like isolation in finFET devices are provided. In one aspect, a method for forming a finFET device includes: etching partial fins in a substrate, wherein the partial fins include top portions of fins of the finFET device; forming a bi-layer spacer on the top portions of the fins; complete etching of the fins in the substrate to form bottom portions of the fins of the finFET device; depositing an insulator between the fins; recessing the insulator enough to expose a region of the fins not covered by the bi-layer spacer; removing the exposed region of the fins to create a gap between the top and bottom portions of the fins; filling the gap with additional insulator. A method for forming a finFET device is also provided where placement of the fin spacer occurs after (rather than before) insulator deposition. A finFET device is also provided.

Abstract: Embodiments are directed to methods and resulting structures for a vertical field effect transistor (VFET) having a super long channel. A pair of semiconductor fins is formed on a substrate. A semiconductor pillar is formed between the semiconductor fins on the substrate. A region that extends under all of the semiconductor fins and under part of the semiconductor pillar is doped. A conductive gate is formed over a channel region of the semiconductor fins and the semiconductor pillar. A surface of the semiconductor pillar serves as an extended channel region when the gate is active.

Abstract: A method of forming adjacent fin field effect transistor devices is provided. The method includes forming at least two vertical fins in a column on a substrate, depositing a gate dielectric layer on the vertical fins, and depositing a work function material layer on the gate dielectric layer. The method further includes depositing a protective liner on the work function material layer, and forming a fill layer on the protective liner. The method further includes removing a portion of the fill layer to form an opening between an adjacent pair of two vertical fins, where the opening exposes a portion of the protective liner. The method further includes depositing an etch-stop layer on the exposed surfaces of the fill layer and protective liner, forming a gauge layer in the opening to a predetermined height, and removing the exposed portion of the etch-stop layer to form an etch-stop segment.

Abstract: A method and structures are used to fabricate a nanosheet semiconductor device. Nanosheet fins including nanosheet stacks including alternating silicon (Si) layers and silicon germanium (SiGe) layers are formed on a substrate and etched to define a first end and a second end along a first axis between which each nanosheet fin extends parallel to every other nanosheet fin. The SiGe layers are undercut in the nanosheet stacks at the first end and the second end to form divots, and a dielectric is deposited in the divots. The SiGe layers between the Si layers are removed before forming source and drain regions of the nanosheet semiconductor device such that there are gaps between the Si layers of each nanosheet stack, and the dielectric anchors the Si layers. The gaps are filled with an oxide that is removed after removing the dummy gate and prior to forming the replacement gate.

Abstract: Methods of forming the MRAM generally include forming an array of MTJ having sub-lithographic dimensions. The array can be formed by providing a substrate including a MTJ material stack including a reference ferromagnetic layer, a tunnel barrier layer, and a free ferromagnetic layer on an opposite side of the tunnel barrier layer. A hardmask layer is deposited onto the MTJ material stack. A first sidewall spacer is formed on the hardmask layer in a first direction. A second sidewall spacer is formed over the first sidewall in a second direction, wherein the first direction is orthogonal to the second direction. The second sidewall spacer intersects the first sidewall spacer. The first sidewall spacer is processed using the second sidewall spacer as mask to form a pattern of oxide pillars having sub-lithographic dimensions. The pattern of oxide pillars are transferred into the MTJ stack to form the array.

Abstract: Semiconductor devices include a first semiconductor fin. A first gate stack is formed over the first semiconductor fin. Source and drain regions are formed on respective sides of the first gate stack. An interlayer dielectric is formed around the first gate stack. A gate cut plug is formed from a dielectric material at an end of the first gate stack.

Abstract: A method of forming a semiconductor device that includes forming a trench adjacent to a gate structure to expose a contact surface of one of a source region and a drain region. A sacrificial spacer may be formed on a sidewall of the trench and on a sidewall of the gate structure. A metal contact may then be formed in the trench to at least one of the source region and the drain region. The metal contact has a base width that is less than an upper surface width of the metal contact. The sacrificial spacer may be removed, and a substantially conformal dielectric material layer can be formed on sidewalls of the metal contact and the gate structure. Portions of the conformally dielectric material layer contact one another at a pinch off region to form an air gap between the metal contact and the gate structure.

Abstract: The present invention provides fin cut techniques in a replacement gate process for finFET fabrication. In one aspect, a method of forming a finFET employs a dummy gate material to pin a lattice constant of patterned fins prior to a fin cut thereby preventing strain relaxation. A dielectric fill in a region of the fin cut (below the dummy gates) reduces an aspect ratio of dummy gates formed from the dummy gate material in the fin cut region, thereby preventing collapse of the dummy gates. FinFETs formed using the present process are also provided.

Abstract: Semiconductor devices include a first dielectric layer formed over a source and drain region. A second dielectric layer is formed over the first dielectric layer. The second dielectric layer has an internal structure that is the result of a thermal oxidation process and has a higher quality than an internal structure of the first dielectric layer. A gate stack is positioned through the first and second dielectric layers.