Patents by Inventor John Sanchez

John Sanchez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8675389
    Abstract: A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO3—LSCoO or LaNiO3—LNO) that is in contact with the CMO. The conductive oxide layer can be selected as a seed layer operative to provide a good lattice match with and/or a lower crystallization temperature for the CMO. The conductive oxide layer may also be in contact with a metal layer (e.g., Pt). The memory cell additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays, such as non-volatile two-terminal cross-point memory arrays.
    Type: Grant
    Filed: October 13, 2011
    Date of Patent: March 18, 2014
    Assignee: Unity Semiconductor Corporation
    Inventors: Christophe Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven Longcor, Darrell Rinerson, John Sanchez, Jr., Philip Swab, Edmond Ward
  • Patent number: 8611130
    Abstract: A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays.
    Type: Grant
    Filed: November 21, 2011
    Date of Patent: December 17, 2013
    Assignee: Unity Semiconductor Corporation
    Inventors: Darrell Rinerson, Christophe Chevallier, Steve Kuo-Ren Hsia, Wayne Kinney, Steven Longcor, John Sanchez, Jr., Philip Swab, Edmond Ward
  • Patent number: 8255239
    Abstract: In an access controller and method for controlling access to medical data, the medical data being provided as at least one first file and a second file independent of the first file with findings regarding patients that are generated by medical personnel being stored in the first file and measurement results of patients that were acquired by means of a medical-technical apparatus being stored in the second file, with at least one subset of the measurement results stored in the second file forming the basis of at least a subset of the findings stored in the first file, the access controller is configured to detect the measurement results forming the basis of a stored finding.
    Type: Grant
    Filed: February 7, 2006
    Date of Patent: August 28, 2012
    Assignee: Siemens Aktiengesellschaft
    Inventors: Catrin Lüll, John Sanchez, Sandra Sodilo
  • Publication number: 20120064691
    Abstract: A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays.
    Type: Application
    Filed: November 21, 2011
    Publication date: March 15, 2012
    Applicant: UNITY SEMICONDUCTOR CORPORATION
    Inventors: DARRELL RINERSON, WAYNE KINNEY, EDMOND R. WARD, STEVE KUO-REN HSIA, STEVEN W. LONGCOR, CHRISTOPHE J. CHEVALLIER, JOHN SANCHEZ, PHILIP F. S. SWAB
  • Publication number: 20120033481
    Abstract: A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO3—LSCoO or LaNiO3—LNO) that is in contact with the CMO. The conductive oxide layer can be selected as a seed layer operative to provide a good lattice match with and/or a lower crystallization temperature for the CMO. The conductive oxide layer may also be in contact with a metal layer (e.g., Pt). The memory cell additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays, such as non-volatile two-terminal cross-point memory arrays.
    Type: Application
    Filed: October 13, 2011
    Publication date: February 9, 2012
    Applicant: UNITY SEMICONDUCTOR CORPORATION
    Inventors: DARRELL RINERSON, WAYNE KINNEY, EDMOND R. WARD, STEVE KUO-REN HSIA, STEVEN LONGCOR, CHRISTOPHE J. CHEVALLIER, JOHN SANCHEZ, PHILIP F. S. SWAB
  • Publication number: 20110186803
    Abstract: A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO3-LSCoO or LaNiO3-LNO) that is in contact with the CMO. The conductive oxide layer can be selected as a seed layer operative to provide a good lattice match with and/or a lower crystallization temperature for the CMO. The conductive oxide layer may also be in contact with a metal layer (e.g., Pt). The memory cell additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays, such as non-volatile two-terminal cross-point memory arrays.
    Type: Application
    Filed: February 15, 2011
    Publication date: August 4, 2011
    Applicant: UNITY SEMICONDUCTOR CORPORATION
    Inventors: Darrell Rinerson, Wayne Kinney, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor, Christophe J. Chevallier, John Sanchez, Philip F.S. Swab
  • Publication number: 20100157657
    Abstract: A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO3-LSCoO or LaNiO3-LNO) that is in contact with the CMO. The conductive oxide layer can be selected as a seed layer operative to provide a good lattice match with and/or a lower crystallization temperature for the CMO. The conductive oxide layer may also be in contact with a metal layer (e.g., Pt). The memory cell additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays, such as non-volatile two-terminal cross-point memory arrays.
    Type: Application
    Filed: December 14, 2009
    Publication date: June 24, 2010
    Applicant: UNITY SEMICONDUCTOR CORPORATION
    Inventors: Darrell Rinerson, Wayne Kinney, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor, Christophe J. Chevallier, John Sanchez, Philip F.S. Swab
  • Publication number: 20090045390
    Abstract: A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO3—LSCoO or LaNiO3—LNO) that is in contact with the CMO. The conductive oxide layer can be selected as a seed layer operative to provide a good lattice match with and/or a lower crystallization temperature for the CMO. The conductive oxide layer may also be in contact with a metal layer (e.g., Pt). The memory cell additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays, such as non-volatile two-terminal cross-point memory arrays.
    Type: Application
    Filed: October 1, 2008
    Publication date: February 19, 2009
    Applicant: UNITY SEMICONDUCTOR CORPORATION
    Inventors: Darrel Rinerson, Wayne Kinney, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor, Christophe J. Chevallier, John Sanchez, Philip F. S. Swab
  • Publication number: 20080293196
    Abstract: A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays.
    Type: Application
    Filed: June 30, 2008
    Publication date: November 27, 2008
    Applicant: UNITY SEMICONDUCTOR CORPORATION
    Inventors: Darrell Rinerson, Wayne Kinney, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor, Christophe J. Chevallier, John Sanchez, Philip F.S. Swab
  • Publication number: 20070263546
    Abstract: A test case management subsystem includes a data store, the data store including data relating to a network device. A network testing subsystem is configured to receive an instruction from said test case management subsystem, wherein the instruction includes the data relating to the network device, and execute an automated command line to test the network device.
    Type: Application
    Filed: March 27, 2007
    Publication date: November 15, 2007
    Applicants: Verizon Services Corp., Verizon Services Organization Inc.
    Inventors: Shafqat Chowdhury, Adam Barrow, Krishna Kodakkattil, John Sanchez, Jennifer Babu, Benyam Chekol
  • Publication number: 20070233639
    Abstract: In an access controller and method for controlling access to medical data, the medical data being provided as at least one first file and a second file independent of the first file with findings regarding patients that are generated by medical personnel being stored in the first file and measurement results of patients that were acquired by means of a medical-technical apparatus being stored in the second file, with at least one subset of the measurement results stored in the second file forming the basis of at least a subset of the findings stored in the first file, the access controller is configured to detect the measurement results forming the basis of a stored finding.
    Type: Application
    Filed: February 7, 2006
    Publication date: October 4, 2007
    Inventors: Catrin Lull, John Sanchez, Sandra Sodilo
  • Publication number: 20060286537
    Abstract: A technique for improving test performance by simulating test conditions. A method according to the technique may include providing a question to an on-line tester, starting a print timer, and allowing the on-line tester to print the question if the print timer has not expired. The method may further include starting a test timer and allowing the on-line tester to submit an answer to the question if the test timer has not expired. The method may further include sending the answer to an on-line grader. A system according to the technique may include a question database, a testing engine, a grading engine, and a performance metric engine.
    Type: Application
    Filed: May 30, 2006
    Publication date: December 21, 2006
    Inventors: George Mandella, John Sanchez
  • Publication number: 20060253849
    Abstract: A method, apparatus, and computer instructions are provided for enhancing software catalog manageability, providing abstract software configuration, and desired state management. A first mechanism is provided for enhancing software catalog manageability. The first mechanism includes a software model that separates metadata of software from actual binaries of the software. A second mechanism is provided for abstracting software configuration for automation. The second mechanism includes a hierarchical software resource template structure that specifies parameters, dependencies between parameters, features, options, and parameters that cannot be predefined. The template is consumed by user defined workflows to create actual software resources during deployment. A third mechanism is provided for desired state management and patch compliance assessments.
    Type: Application
    Filed: May 6, 2005
    Publication date: November 9, 2006
    Applicant: International Business Machines Corporation
    Inventors: Mircea Avram, Peter Kissa, Geyu Li, Radu Mateescu, Arnaud Airy Mathieu, Andrei Oprea, C. Peteanu, John Sanchez, Cristina Tecsa, Teodor Tecsa, Andrew Trossman
  • Publication number: 20060249997
    Abstract: A car seat carrier includes a belt for holding the car seat and a shoulder strap attached to the belt for carrying the car seat. The belt resides around the base of the car seat. A first end of the shoulder strap attaches to a center point of a first belt end. A cross-strap crosses over the car seat, attaching to opposite sides of the belt near a second belt end, and is connected to a second end of the shoulder strap by a sliding buckle. The belt is preferably a fixed length belt which fits most car seats. The shoulder strap may further include padding to increase comfort and may be adjustable in length.
    Type: Application
    Filed: July 11, 2006
    Publication date: November 9, 2006
    Inventor: John Sanchez
  • Publication number: 20060245243
    Abstract: A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays.
    Type: Application
    Filed: June 22, 2006
    Publication date: November 2, 2006
    Inventors: Darrell Rinerson, Wayne Kinney, Edmond Ward, Steve Hsia, Steven Longcor, Christophe Chevallier, John Sanchez, Philip Swab
  • Publication number: 20060208541
    Abstract: A car seat carrier includes a belt for holding the car seat and a shoulder strap attached to the belt for carrying the car seat. The belt resides around the base of the car seat. The shoulder strap attaches diagonal across the belt to provide a balanced carry. A cross-strap crosses over the car seat, attaching to the belt on one side and to the shoulder strap on an opposite side, and is attached to the shoulder strap at a point about twelve inches from the attachment of the shoulder strap to the belt. The cross-strap length is adjustable to allow the cross-strap/shoulder strap geometry to be adjusted to balance the car seat. The shoulder strap includes a buckle and the length adjustment. The shoulder strap may further include padding to increase comfort.
    Type: Application
    Filed: March 1, 2005
    Publication date: September 21, 2006
    Inventor: John Sanchez
  • Publication number: 20060171200
    Abstract: A memory using a mixed valence conductive oxides. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.
    Type: Application
    Filed: March 30, 2005
    Publication date: August 3, 2006
    Applicant: UNITY SEMICONDUCTOR CORPORATION
    Inventors: Darrell Rinerson, Christophe Chevallier, Wayne Kinney, Roy Lambertson, Steven Longcor, John Sanchez, Lawrence Schloss, Philip Swab, Edmond Ward
  • Publication number: 20060158998
    Abstract: A movable terminal in a two terminal memory array. A storage medium is disposed between two terminals, one of the terminals being movable relative to the second terminal. Either one of the terminals or both terminals might actually move, resulting in one terminal being moved relative to the other terminal. A memory element disposed between the two terminals has a conductance that is responsive to a write voltage across the electrodes.
    Type: Application
    Filed: January 18, 2005
    Publication date: July 20, 2006
    Inventors: Darrell Rinerson, Christophe Chevallier, John Sanchez, Lawrence Schloss
  • Patent number: 7026225
    Abstract: A semiconductor component having a feature suitable for inhibiting stress induced void formation and a method for manufacturing the semiconductor component. A semiconductor substrate is provided having a major surface. A layer of dielectric material is formed over the major surface. A metallization system is formed over the layer of dielectric material, wherein the metallization system includes a portion having gaps or apertures which inhibit stress induced void formation.
    Type: Grant
    Filed: October 29, 2003
    Date of Patent: April 11, 2006
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Christine Hau-Riege, Amit Marathe, John Sanchez, Jr.
  • Publication number: 20050262138
    Abstract: A family of Java interfaces defines methods to provide common information about a property, such as data type and editing capabilities. The interfaces identify the methods used to get generic metadata. Implementers may extend these classes, as needed, to provide the metadata for their specific properties. The common metadata description interface of the present invention allows multiple metadata sources to be used interchangeably within the same software product without the software code being specifically written for each metadata source.
    Type: Application
    Filed: July 15, 2005
    Publication date: November 24, 2005
    Inventors: John Hartel, Karalee LeBlanc, John Sanchez