Patents by Inventor John Smythe

John Smythe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures
    Patent number: 9865456
    Abstract: Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.
    Type: Grant
    Filed: August 12, 2016
    Date of Patent: January 9, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Sumeet C. Pandey, Brenda D. Kraus, Stefan Uhlenbrock, John A. Smythe, Timothy A. Quick
  • APPARATUS PROVIDING SIMPLIFIED ALIGNMENT OF OPTICAL FIBER IN PHOTONIC INTEGRATED CIRCUITS
    Publication number: 20180003905
    Abstract: A structure for optically aligning an optical fiber to a protonic device and method of fabrication of same. The structure optically aligns an optical fiber to the protonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.
    Type: Application
    Filed: June 30, 2017
    Publication date: January 4, 2018
    Inventors: Gurtej Sandhu, Roy Meade, Lei Bi, John Smythe
  • MEMORY CELL MATERIALS AND SEMICONDUCTOR DEVICE STRUCTURES
    Publication number: 20170309820
    Abstract: A method of forming a memory cell material comprises forming a first portion of a dielectric material over a substrate by atomic layer deposition. Discrete conductive particles are formed on the first portion of the dielectric material by atomic layer deposition. A second portion of the dielectric material is formed on and between the discrete conductive particles by atomic layer deposition. A memory cell material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.
    Type: Application
    Filed: July 7, 2017
    Publication date: October 26, 2017
    Inventors: Gurtej S. Sandhu, John A. Smythe
  • Methods of forming a memory cell material, and related methods of forming a semiconductor device structure, memory cell materials, and semiconductor device structures
    Patent number: 9735359
    Abstract: A method of forming a memory cell material comprises forming a first portion of a dielectric material over a substrate by atomic layer deposition. Discrete conductive particles are formed on the first portion of the dielectric material by atomic layer deposition. A second portion of the dielectric material is formed on and between the discrete conductive particles by atomic layer deposition. A memory cell material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.
    Type: Grant
    Filed: April 23, 2014
    Date of Patent: August 15, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej S. Sandhu, John A. Smythe
  • Apparatus providing simplified alignment of optical fiber in photonic integrated circuits
    Patent number: 9715070
    Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: July 25, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Roy Meade, Lei Bi, John Smythe
  • Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array
    Patent number: 9666801
    Abstract: A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.
    Type: Grant
    Filed: May 16, 2016
    Date of Patent: May 30, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Nishant Sinha, John Smythe, Bhaskar Srinivasan, Gurtej S. Sandhu, Joseph Neil Greeley, Kunal R. Parekh
  • APPARATUS PROVIDING SIMPLIFIED ALIGNMENT OF OPTICAL FIBER IN PHOTONIC INTEGRATED CIRCUITS
    Publication number: 20170139163
    Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.
    Type: Application
    Filed: November 28, 2016
    Publication date: May 18, 2017
    Inventors: Gurtej Sandhu, Roy Meade, Lei Bi, John Smythe
  • Resistive RAM devices and methods
    Patent number: 9634250
    Abstract: The present disclosure includes a high density resistive random access memory (RRAM) device, as well as methods of fabricating a high density RRAM device. One method of forming an RRAM device includes forming a resistive element having a metal-metal oxide interface. Forming the resistive element includes forming an insulative material over the first electrode, and forming a via in the insulative material. The via is conformally filled with a metal material, and the metal material is planarized to within the via. A portion of the metal material within the via is selectively treated to create a metal-metal oxide interface within the via. A second electrode is formed over the resistive element.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: April 25, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Joseph N. Greeley, John A. Smythe, III
  • Non-volatile resistive oxide memory cells and methods of forming non-volatile resistive oxide memory cells
    Patent number: 9577186
    Abstract: A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. The first conductive electrode has an elevationally outermost surface and opposing laterally outermost edges at the elevationally outermost surface in one planar cross section. Multi-resistive state metal oxide-comprising material is formed over the first conductive electrode. Conductive material is deposited over the multi-resistive state metal oxide-comprising material. A second conductive electrode of the memory cell which comprises the conductive material is received over the multi-resistive state metal oxide-comprising material.
    Type: Grant
    Filed: June 4, 2012
    Date of Patent: February 21, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Bhaskar Srinivasan, Gurtej Sandhu, John Smythe
  • Semiconductor devices comprising interconnect structures and methods of fabrication
    Patent number: 9576904
    Abstract: Semiconductor devices comprise at least one integrated circuit layer, at least one conductive trace and an insulative material adjacent at least a portion of the at least one conductive trace. At least one interconnect structure extends through a portion of the at least one conductive trace and a portion of the insulative material, the at least one interconnect structure comprising a transverse cross-sectional dimension through the at least one conductive trace which differs from a transverse cross-sectional dimension through the insulative material.
    Type: Grant
    Filed: August 17, 2015
    Date of Patent: February 21, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej S. Sandhu, Nishant Sinha, John A. Smythe
  • Trench isolation implantation
    Patent number: 9514976
    Abstract: Embodiments of the disclosure include a shallow trench isolation structure having a dielectric material with energetic species implanted to a predetermined depth of the dielectric material. Embodiments further include methods of fabricating the trench structures with the implant of energetic species to the predetermined depth. In various embodiments the implant of energetic species is used to densify the dielectric material to provide a uniform wet etch rate across the surface of the dielectric material. Embodiments also include memory devices, integrated circuits, and electronic systems that include shallow trench isolation structures having the dielectric material with the high flux of energetic species implanted to the predetermined depth of the dielectric material.
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: December 6, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej S. Sandhu, John A. Smythe, III
  • Apparatus providing simplified alignment of optical fiber in photonic integrated circuits
    Patent number: 9507104
    Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.
    Type: Grant
    Filed: April 20, 2016
    Date of Patent: November 29, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Roy Meade, Lei Bi, John Smythe
  • RESISTIVE RAM DEVICES AND METHODS
    Publication number: 20160315258
    Abstract: The present disclosure includes a high density resistive random access memory (RRAM) device, as well as methods of fabricating a high density RRAM device. One method of forming an RRAM device includes forming a resistive element having a metal-metal oxide interface. Forming the resistive element includes forming an insulative material over the first electrode, and forming a via in the insulative material. The via is conformally filled with a metal material, and the metal material is planarized to within the via. A portion of the metal material within the via is selectively treated to create a metal-metal oxide interface within the via. A second electrode is formed over the resistive element.
    Type: Application
    Filed: June 30, 2016
    Publication date: October 27, 2016
    Inventors: Joseph N. Greeley, John A. Smythe, III
  • Methods of Forming a Non-Volatile Resistive Oxide Memory Cell and Methods of Forming a Non-Volatile Resistive Oxide Memory Array
    Publication number: 20160260899
    Abstract: A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.
    Type: Application
    Filed: May 16, 2016
    Publication date: September 8, 2016
    Applicant: Micron Technology, Inc.
    Inventors: Nishant Sinha, John Smythe, Bhaskar Srinivasan, Gurtej S. Sandhu, Joseph Neil Greeley, Kunal R. Parekh
  • Resistive RAM devices and methods
    Patent number: 9419219
    Abstract: The present disclosure includes a high density resistive random access memory (RRAM) device, as well as methods of fabricating a high density RRAM device. One method of forming an RRAM device includes forming a resistive element having a metal-metal oxide interface. Forming the resistive element includes forming an insulative material over the first electrode, and forming a via in the insulative material. The via is conformally filled with a metal material, and the metal material is planarized to within the via. A portion of the metal material within the via is selectively treated to create a metal-metal oxide interface within the via. A second electrode is formed over the resistive element.
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: August 16, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Joseph N. Greeley, John A. Smythe, III
  • APPARATUS PROVIDING SIMPLIFIED ALIGNMENT OF OPTICAL FIBER IN PHOTONIC INTEGRATED CIRCUITS
    Publication number: 20160231519
    Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.
    Type: Application
    Filed: April 20, 2016
    Publication date: August 11, 2016
    Inventors: Gurtej Sandhu, Roy Meade, Lei Bi, John Smythe
  • FORMING MEMORY USING HIGH POWER IMPULSE MAGNETRON SPUTTERING
    Publication number: 20160155619
    Abstract: Forming memory using high power impulse magnetron sputtering is described herein. One or more method embodiments include forming a resistive memory material on a structure using high power impulse magnetron sputtering (HIPIMS), wherein the resistive memory material is formed on the structure in an environment having a temperature of approximately 400 degrees Celsius or less.
    Type: Application
    Filed: January 4, 2016
    Publication date: June 2, 2016
    Inventors: Yongjun Jeff Hu, Everett A. McTeer, John A. Smythe, III, Gurtej S. Sandhu
  • Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array
    Patent number: 9343665
    Abstract: A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.
    Type: Grant
    Filed: July 2, 2008
    Date of Patent: May 17, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Nishant Sinha, John Smythe, Bhaskar Srinivasan, Gurtej S. Sandhu, Joseph Neil Greeley, Kunal R. Parekh
  • Apparatus providing simplified alignment of optical fiber in photonic integrated circuits
    Patent number: 9341787
    Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.
    Type: Grant
    Filed: January 2, 2013
    Date of Patent: May 17, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Roy Meade, Lei Bi, John Smythe
  • GCIB-treated resistive device
    Patent number: 9343677
    Abstract: The present disclosure includes GCIB-treated resistive devices, devices utilizing GCIB-treated resistive devices (e.g., as switches, memory cells), and methods for forming the GCIB-treated resistive devices. One method of forming a GCIB-treated resistive device includes forming a lower electrode, and forming an oxide material on the lower electrode. The oxide material is exposed to a gas cluster ion beam (GCIB) until a change in resistance of a first portion of the oxide material relative to the resistance of a second portion of the oxide material. An upper electrode is formed on the first portion.
    Type: Grant
    Filed: January 14, 2015
    Date of Patent: May 17, 2016
    Assignee: Micron Technology, Inc.
    Inventors: John A. Smythe, III, Gurtej S. Sandhu