Patents by Inventor John Spencer Morris
John Spencer Morris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11005058Abstract: A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/?, wherein ? represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.Type: GrantFiled: June 19, 2019Date of Patent: May 11, 2021Assignee: SAMSUNG RESEARCH AMERICA, INC.Inventors: Zhaoqun Zhou, Peter T. Kazlas, Mead Misic, Zoran Popovic, John Spencer Morris
-
Publication number: 20190312222Abstract: A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/?, wherein ? represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.Type: ApplicationFiled: June 19, 2019Publication date: October 10, 2019Inventors: ZHAOQUN ZHOU, PETER T. KAZLAS, MEAD MISIC, ZORAN POPOVIC, JOHN SPENCER MORRIS
-
Patent number: 10333090Abstract: A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/?, wherein ? represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.Type: GrantFiled: July 14, 2017Date of Patent: June 25, 2019Assignee: SAMSUNG RESEARCH AMERICA, INC.Inventors: Zhaoqun Zhou, Peter T. Kazlas, Mead Misic, Zoran Popovic, John Spencer Morris
-
Patent number: 10056523Abstract: A method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, fixing the layer comprising quantum dots formed over the substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. The layer comprising quantum dots can be preferably fixed in the absence or substantial absence of oxygen. Also disclosed is a method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, exposing the layer comprising quantum dots to small molecules and light flux.Type: GrantFiled: November 13, 2016Date of Patent: August 21, 2018Assignee: SAMSUNG RESEARCH AMERICA, INC.Inventors: Peter T. Kazlas, John Spencer Morris, Robert J. Nick, Zoran Popovic, Matthew Stevenson, Jonathan S. Steckel
-
Publication number: 20180013088Abstract: A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/?, wherein ? represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.Type: ApplicationFiled: July 14, 2017Publication date: January 11, 2018Inventors: ZHAOQUN ZHOU, PETER T. KAZLAS, MEAD MISIC, ZORAN POPOVIC, JOHN SPENCER MORRIS
-
Patent number: 9793505Abstract: A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/?, wherein ? represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.Type: GrantFiled: October 2, 2010Date of Patent: October 17, 2017Assignee: QD VISION, INC.Inventors: Zhaoqun Zhou, Peter T. Kazlas, Mead Misic, Zoran Popovic, John Spencer Morris
-
Publication number: 20170125633Abstract: A method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, fixing the layer comprising quantum dots formed over the substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. The layer comprising quantum dots can be preferably fixed in the absence or substantial absence of oxygen. Also disclosed is a method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, exposing the layer comprising quantum dots to small molecules and light flux.Type: ApplicationFiled: November 13, 2016Publication date: May 4, 2017Inventors: PETER T. KAZLAS, JOHN SPENCER MORRIS, ROBERT J. NICK, ZORAN POPOVIC, MATTHEW STEVENSON, JONATHAN S. STECKEL
-
Patent number: 9496141Abstract: A method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, fixing the layer comprising quantum dots formed over the substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. Also disclosed is a method of making a device, the method comprising forming a layer comprising quantum dots over a substrate including a first electrode, exposing the layer comprising quantum dots to small molecules and light flux. A method of making a film including a layer comprising quantum dots, and a method of preparing a device component including a layer comprising quantum dots are also disclosed. Devices, device components, and films are also disclosed.Type: GrantFiled: May 10, 2012Date of Patent: November 15, 2016Assignee: QD VISION, INC.Inventors: Peter T. Kazlas, John Spencer Morris, Robert J. Nick, Zoran Popovic, Matthew Stevenson, Jonathan S. Steckel
-
Publication number: 20130037778Abstract: A method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, fixing the layer comprising quantum dots formed over the substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. Also disclosed is a method of making a device, the method comprising forming a layer comprising quantum dots over a substrate including a first electrode, exposing the layer comprising quantum dots to small molecules and light flux. A method of making a film including a layer comprising quantum dots, and a method of preparing a device component including a layer comprising quantum dots are also disclosed. Devices, device components, and films are also disclosed.Type: ApplicationFiled: May 10, 2012Publication date: February 14, 2013Inventors: PETER T. KAZLAS, John Spencer Morris, Robert J. Nick, Zoran Popovic, Matthew Stevenson, Jonathan S. Steckel
-
Publication number: 20110140075Abstract: A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/?, wherein ? represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.Type: ApplicationFiled: October 2, 2010Publication date: June 16, 2011Inventors: Zhaoqun ZHOU, Peter T. Kazlas, Mead Misic, Zoran Popovic, John Spencer Morris