Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.

Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.

Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.

Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

Abstract: Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes a first electrode including an anode opposite a second electrode including a cathode, a hole injection layer adjacent the first electrode, a hole transporting layer disposed on the hole injection layer, and an emissive layer of inorganic semiconductor nanocrystals disposed between the hole transporting layer and the second electrode. The inorganic semiconductor nanocrystals comprising a plurality of semiconductor nanocrystals capable of emitting light upon excitation.

Abstract: A display may have an array of pixels. Each pixel may have a light-emitting diode such as an organic light-emitting diode or may be formed from other pixel structures such as liquid crystal display pixel structures. The pixels may emit light such as red, green, and blue light. An angle-of-view adjustment layer may overlap the array of pixels. During operation, light from the pixels passes through the angle-of-view adjustment layer to a user. The viewing angle for the user is enhanced as the angular spread of the emitted light from the pixels is enhanced by the angle-of-view adjustment layer. The angle-of-view adjustment layer may be formed from holographic structures recorded by applying laser beams to a photosensitive layer or may be formed from a metasurface that is created by patterning nanostructures on the display using printing, photolithography, or other patterning techniques.

Abstract: Quantum dot layers and display devices including quantum dot layers are described. In an embodiment the quantum dot layer includes quantum dots with coatings to adjust the spacing between adjacent quantum dots. In an embodiment, the coatings are metal oxide coatings and may create a charge transporting matrix. In an embodiment, the coatings are core-material coatings. The QD layers may be QD-LED compatible.

Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

Abstract: The present inventions relate to optical components which include quantum confined semiconductor nanoparticles, wherein at least a portion of the nanoparticles include a ligand attached to a surface thereof, the ligand being represented by the formula: X-Sp-Z, wherein: X represents a primary amine group, a secondary amine group, a urea, a thiourea, an imidizole group, an amide group, an other nitrogen containing group, a carboxylic acid group, a phosphonic or arsonic acid group, a phosphinic or arsinic acid group, a phosphate or arsenate group, a phosphine or arsine oxide group; Sp represents a spacer group, such as a group capable of allowing a transfer of charge or an insulating group; and Z represents: (i) a reactive group capable of communicating specific chemical properties to the nanocrystal as well as provide specific chemical reactivity to the surface of the nanocrystal, and/or (ii) a group that is cyclic, halogenated, or polar a-protic.

Abstract: A display may have display layers that form an array of pixels. The display layers may include a first layer that includes a light-blocking matrix and a second layer that overlaps the first layer. The first layer may include quantum dot elements formed in openings in the light-blocking matrix. The light-blocking matrix may be formed from a reflective material such as metal. The second layer may include color filter elements that overlap corresponding quantum dot elements in the first layer. Substrate layers may be used to support the first and second layers and to support thin-film transistor circuitry that is used in controlling light transmission through the array of pixels. The display layers may include a liquid crystal layer, polarizer layers, filter layers for reflecting red and green light and/or other light to enhance light recycling, and layers with angularly dependent transmission characteristics.

Abstract: Displays including hybrid pixels including an OLED subpixel and QD-LED subpixel are described. In an embodiment, OLED and QD-LED stacks are integrated into the same pixel with multiple common layers shared by the OLED and QD-LED stacks.

Abstract: Display panel narrow band emission pixels and methods of fabrication are described. In an embodiment, such a pixel arrangement includes a pair of reflective electrodes, a pair of narrow band emission layers, and a pair of hole transport layers of different thickness over the pair of reflective electrodes and narrow band emission layers. A semi-transparent or transparent top electrode layer is located over the first and second hole transport layers.

Abstract: Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes a first electrode including an anode opposite a second electrode including a cathode, a hole injection layer adjacent the first electrode, a hole transporting layer disposed on the hole injection layer, and an emissive layer of inorganic semiconductor nanocrystals disposed between the hole transporting layer and the second electrode. The inorganic semiconductor nanocrystals comprising a plurality of semiconductor nanocrystals capable of emitting light upon excitation.

Abstract: A composition useful for altering the wavelength of visible or invisible light is disclosed. The composition comprising a solid host material and quantum confined semiconductor nanoparticles, wherein the nanoparticles are included in the composition in amount in the range from about 0.001 to about 15 weight percent based on the weight of the host material. The composition can further include scatterers. An optical component including a waveguide component and quantum confined semiconductor nanoparticles is also disclosed. A device including an optical component is disclosed. A system including an optical component including a waveguide component and quantum confined semiconductor nanoparticles and a light source optically coupled to the waveguide component is also disclosed. A decal, kit, ink composition, and method are also disclosed. A TFEL including quantum confined semiconductor nanoparticles on a surface thereof is also disclosed.

Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

Abstract: Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes a first electrode including an anode opposite a second electrode including a cathode, a hole injection layer adjacent the first electrode, a hole transporting layer disposed on the hole injection layer, and an emissive layer of inorganic semiconductor nanocrystals disposed between the hole transporting layer and the second electrode. The inorganic semiconductor nanocrystals comprising a plurality of semiconductor nanocrystals capable of emitting light upon excitation.

Abstract: Displays including hybrid pixels including an OLED subpixel and QD-LED subpixel are described. In an embodiment, OLED and QD-LED stacks are integrated into the same pixel with multiple common layers shared by the OLED and QD-LED stacks.

Abstract: A light emitting device includes a semiconductor nanocrystal in a layer. The layer can be a monolayer of semiconductor nanocrystals. The monolayer can form a pattern on a substrate.